CGS 350 VDC Search Results

MALLORY CAPACITORS type HES

Abstract: MALLORY CAPACITORS cgs series MIL-C-39018
Contextual Info: Selector Guide & Performance Specifications Computer Grade Capacitors • Type r ; i T e m p e ra tu re R ange CGS/ CGH -40°C to +85°C | Range VDC j Hours r Low > ■ Life Test @°C| Cap j 10 to 500 1000 +85 Good 10 to 450 2000 +85 Best HES -40°C to +105°C 350 to 400

J111

Abstract: j113 j112
Contextual Info: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

transistor J111

Abstract: transistor J112 MARKING RK J113 SOT-23 marking M6 140 j112 m6 marking j-fet BSR58LT1
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

J112

Abstract: J113 j111 J112 jfet J111/5
Contextual Info: ON Semiconductort N−Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain −Gate Voltage Rating VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

MALLORY CAPACITORS cgs

Abstract: MALLORY TYPE CGS S85IU CGS402T200W4C 24U02 CGS35IT450R5C si93 CGS302U025 CGS102T350V4C cgs822u035r3c
Contextual Info: Type CGS • MallorY Computer Grade Capacitors GENERAL SPECIFICATIONS DC Leakage C urrent: I = .006 V C V after 30 minutes Not to exceed 6mA C = Capacitance in V = Rated Voltage I = Leakage Current in mA ■ High CV Product ■ Screw Terminals ■ Suitable for use in most

41/CGS313U050W4C

Contextual Info: Type CGS • Computer Grade Capacitors mmmmmmms ms ms B a - a m GENERAL SPECIFICATIONS ■ High CV Product ■ Screw Terminals ■ Suitable for use in most demanding applications requiring high current filtering or energy storage ■ Custom Designs Available

MPF971

Abstract: MPF970
Contextual Info: MOTOROLA Order this document by MPF971/D SEMICONDUCTOR TECHNICAL DATA JFET Switching P–Channel — Depletion MPF971 1 DRAIN 3 GATE 2 SOURCE MAXIMUM RATINGS Symbol Value Unit Drain – Source Voltage Rating VDS 25 Vdc Drain – Gate Voltage VDG 30 Vdc VGSR

MPF4393

Contextual Info: ON Semiconductort 1 DRAIN JFETs Switching MPF4392 MPF4393 3 GATE N–Channel – Depletion ON Semiconductors Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage

Contextual Info: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG f

j310

Abstract: J309 J310 equivalent
Contextual Info: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N–Channel – Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C

j310

Abstract: j310 equivalent
Contextual Info: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N−Channel − Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C

MALLORY CGS CAPACITORS

Abstract: mallory capacitor fp CGS222U050R2C Mallory Type CGS Mallory cgs MALLORY CAPACITOR CATALOG MALLORY 150 M CAPACITORS
Contextual Info: • Types CGS, CG, CGR, CGO, CGH Dimensions and Size Charts MallorY Case Code Chart Uninsulated Can_ _Inches . — A O O ro a « o E 3 R2C R2L R3C R3L R4C R4L R5C R5L U2C U2L U3C U3L U4C U4L U5C U5L V2C V2L V3C V3L V4C V4L V5C V5L W3C W3L W4C W4L

jfet j112

Abstract: J113 j111 transistor J112 J112 J112 TO92
Contextual Info: ON Semiconductort N–Channel — Depletion J111 J112 J113 1 DRAIN JFET Chopper Transistors 3 GATE 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C

application note jfet J111 transistor

Abstract: jfet J111 transistor transistor J111 BSR58LT1 transistor j113 j113 equivalent J111 J112 J113 CODE m6
Contextual Info: BSR58LT1 JFET Chopper Transistor N–Channel – Depletion MAXIMUM RATINGS Rating http://onsemi.com Symbol Value Unit Drain–Gate Voltage VDG –40 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

2N5640

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Switching N-Channel — Depletion 2N 5555 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit VDS 25 Vdc Vdc Drain-Source Voltage Drain-Gate Voltage VDG 25 Gate-Source Voltage vgs 25 Vdc Forward Gate Current Ig f 10

RD2001

Abstract: MPF4392
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFETs Sw itching N-Channel — Depletion M PF4392 M PF4393 1DRAIN Motorola Preferred Devices MAXIMUM RATINGS Rating Drain-Source Voltage Symbol Value Unit Vdc Vdc Vd S 30 Drain-Gate Voltage Vd G 30 Gate-Source Voltage

Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

meggitt resistors

Contextual Info: MEGGITT CGS HIGH VOLTAGE RESISTORS HIGH VALUE RESISTORS HIGH POWER RESISTORS ALUMINIUM CLAD RESISTORS CURRENT SENSE RESISTORS Aluminium Housed Power Wirewound Resistors TYPE CRF SERIES The CRF series from Meggitt CGS is a range of quality resistors designed to achieve environmental protection

transistor j112

Abstract: J112 jfet j112
Contextual Info: ON Semiconductort JFET Chopper Transistor J112 N–Channel — Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain–Gate Voltage VDG –35 Vdc Gate–Source Voltage VGS –35 Vdc Gate Current IG 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C

application note jfet J111 transistor

Abstract: BSR58LT1G M6 BSR58LT1G BSR58LT1 J111 J112 J113 m6 marking transistor sot-23 transistor J111 marking j112
Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS Rating 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

MPF4392

Abstract: MPF4393
Contextual Info: MPF4392, MPF4393 Preferred Devices JFET Switching Transistors N−Channel − Depletion MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 30 Vdc Drain −Gate Voltage VDG 30 Vdc Gate−Source Voltage VGS 30 Vdc Forward Gate Current IG f

j112

Abstract: j112g J111
Contextual Info: J111, J112 JFET Chopper Transistors N−Channel — Depletion Features • Pb−Free Packages are Available* http://onsemi.com 1 DRAIN MAXIMUM RATINGS Rating Symbol Value Unit Drain −Gate Voltage VDG −35 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current

Diode R4D

Abstract: MPF4392 MPF4393 cgs clad
Contextual Info: ON Semiconductort 1 DRAIN JFETs Switching MPF4392 MPF4393 3 GATE N–Channel – Depletion ON Semiconductors Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 30 Vdc Drain–Gate Voltage VDG 30 Vdc Gate–Source Voltage

BSR58LT1

Contextual Info: BSR58LT1 JFET Chopper Transistor N−Channel − Depletion Features • Pb−Free Package is Available http://onsemi.com MAXIMUM RATINGS 2 SOURCE Symbol Value Unit Drain −Gate Voltage VDG −40 Vdc Gate −Source Voltage VGS −35 Vdc Gate Current IG 50