J310 Search Results

741J

Contextual Info: Temic J/SST/U308 Series S e m i c o n d u c t o r s N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number V G S ioff V ) J3 0 8 - I t o - 6 .5 V (B R )G S S M in (V ) g ft Min (mS) -2 5 8 Id ss M in (m A ) 12 J309 —1 t o —4

Contextual Info: B 62 9-97 J310 N -C H A N N EL SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXER Absolute maximum ratings at TA * 25°C • OSCILLATOR • VHF/UHF AMPLIFIER Reverse Gate Source Voltage - 25 V Reverse Gate Drain Voltage Continuous Forward Gate Current Continuous Device Power Dissipation

vk200 choke

Abstract: J310 jfet J309 J308 MVM010W j310 U-310 U310 J310 equivalent variable trimmer
Contextual Info: ON Semiconductort J308 J309 J310 JFET VHF/UHF Amplifiers N–Channel — Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc

j310

Abstract: J309 J310 equivalent
Contextual Info: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N–Channel – Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain–Source Voltage VDS 25 Vdc Gate–Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C

j310

Abstract: j310 equivalent
Contextual Info: ON Semiconductort J309 J310 JFET VHF/UHF Amplifiers N−Channel − Depletion ON Semiconductor Preferred Devices MAXIMUM RATINGS Rating Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate−Source Voltage VGS 25 Vdc Forward Gate Current IGF 10 mAdc Total Device Dissipation @ TA = 25°C

Transistor J310

Abstract: J309 J310 J310 applications CBVK741B019 F63TNR MMBFJ309 MMBFJ310 PN2222N J310 Application Note
Contextual Info: MMBFJ309 J310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

SST310

Abstract: U308
Contextual Info: # v i l snW îs* V iU I U U I v N-Channel JFET High Frequency Amplifier 1 CORPORATION * 1 \J J308- J310/SST308- SST310 FE A TU R E S • • • • • A B S O L U T E M A X IM U M R ATIN G S Ta = 25°C unless otherwise specified In dustry S ta n d a rd Part in Lo w C ost P lastic P a ckage

j310 equivalent

Abstract: J310 J310 applications J309 Transistor J310 J308 MCD221
Contextual Info: Philips Semiconductors Product specification N-channel silicon field-effect transistors FEA TU R ES J308; J309; J310 P IN N IN G - T O -92 • Low noise PIN SYM BOL • Interchangeability of drain and source connections 1 g gate • High gain. 2 s source 3

ua309

Abstract: J310 equivalent J310 J310G J309-J310 J309 MMBFJ309 MMBFJ310 fr 309 625 GFG
Contextual Info: J309 / J310 / MMBFJ309 / J310 MMBFJ309 J310 J309 J310 G S G S TO-92 SOT-23 D D Mark: 6U / 6T NOTE: Source & Drain are interchangeable N-Channel RF Amplifier This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and

symbol transistor BC108

Abstract: BC108 characteristic j310 replacement BC237 J309 X2 dpak U310 transistor based class A amplifier lab motorola JFET 2N3819 JFET 2N3819 MOTOROLA
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers N–Channel — Depletion J308 J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25 Vdc Gate–Source Voltage VGS

J-Series

Abstract: Siliconix JFETs Dual J308 J309 J310 SST308 SST309 SST310 U309 U310
Contextual Info: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 −1 to −6.5 J309 −1 to −4 −25 8 12 −25 10 J310 12 −2 to −6.5

Siliconix J310

Abstract: SST310 Siliconix N-Channel JFETs U309 J308 J309 J310 SST308 SST309 U310
Contextual Info: J/SST/U308 Series N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 –1 to –6.5 J309 –1 to –4 –25 8 12 –25 10 12 J310 –2 to –6.5 –25 8 24

Contextual Info: J309, J310 Preferred Device JFET VHF/UHF Amplifiers N−Channel — Depletion Features http://onsemi.com • Pb−Free Packages are Available* 1 DRAIN MAXIMUM RATINGS Symbol Value Unit Drain −Source Voltage VDS 25 Vdc Gate −Source Voltage VGS 25 Vdc Forward Gate Current

u310 siliconix

Abstract: Siliconix J310 marking 6AC sot23 U309 U310
Contextual Info: T e m ic J/SST/U308 Series Siliconix N-Channel JFETs J308 J309 J310 SST308 SST309 SST310 U309 U310 Product Summary P a rt N um ber I DSS M in mA - w Ë G s m 0 ) : X : V(BR)u ss M in (V) 12 J308 - 1 to -6 .5 -2 5 8 J309 - 1 to - 4 -2 5 10 12 J310 - 2 to -6 .5

U310

Contextual Info: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMM ARY Part Number VgW V J308 - 1 to - 6 . 5 -2 5 8 J309 -1 to - 4 -2 5 10 12 J310 - 2 to - 6 . 5 -2 5 6 24 SST308 -1 to - 6 . 5 -2 5 8 12 SST309 - 1 to —4

LSJ310

Abstract: Siliconix J310
Contextual Info: J310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J310 The J310 is a high frequency n-channel JFET offering a wide range and low noise performance. The TO-92 package is well suited for cost sensitive applications and mass production. See Packaging Information .

SST310

Abstract: sot-23 MARKING CODE 431 431 sot-23 Siliconix JFETs Dual Vishay Siliconix j310 equivalent Siliconix N-Channel JFETs sot 23 marking code 431 J308 J309
Contextual Info: J/SST/U308 Series Vishay Siliconix N-Channel JFETs J308 SST308 U309 J309 SST309 U310 J310 SST310 PRODUCT SUMMARY Part Number VGS off (V) V(BR)GSS Min (V) gfs Min (mS) IDSS Min (mA) J308 −1 to −6.5 J309 −1 to −4 −25 8 12 −25 10 J310 12 −2 to −6.5

Contextual Info: N-Channel JFET High Frequency Amplifier LLC J308 – J310 / SST308 – SST310 FEATURES • Industry Standard Part in Low Cost Plastic Package • High Power Gain Noise • Low • Dynamic Range Greater Than 100dB • Easily Matched to 75Ω Input APPLICATIONS

CPJ-J310-MT-X-X

Abstract: phone jack hex nut thread
Contextual Info: 1 2 3 4 5 6 7 8 9 SPECIFICATIONS Contact Resistance: 30mΩ max. Insulation Resistance: 100MΩ min. at DC 500V Withstanding: AC 500V for one minute A A B B R=Round Nut C C H=Hex Nut D Item 1 2 3 4 5 6 E F Series Style CPJ J310 Phone ø3.5mm jack RoHS compliant

SSN SOT-23

Abstract: J308 marking hb3 package marking 33b sot-23 marking z08
Contextual Info: _ C v llO Q I G N-Channel JFET High Frequency Amplifier CORPORATION \J J308- J310/SST308-SST3W FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise specified Industry Standard Part in Low Cost Plastic Package High Power Gain

motorola U310

Abstract: Motorola J310 motorola 539 U310 motorola Allen-Bradley 100-k motorola 2443 VK200 rfc vk200 rfc with 6 turns J309 J310 jfet
Contextual Info: MOTOROLA Order this document by J308/D SEMICONDUCTOR TECHNICAL DATA JFET VHF/UHF Amplifiers J308 N–Channel — Depletion J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDS 25

J310

Abstract: J309 application note J308 J310 applications J309 MCD212 MCD221 VHF Transistors
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 Jul 30 Philips Semiconductors Product specification N-channel silicon field-effect transistors

Contextual Info: J309 / J310 / MMBFJ309 / J310 N-Channel RF Amplifier Features • • • • This device is designed for VHF/UHF amplifier, oscillator and mixer applications. As a common gate amplifier, 16 dB at 100 MHz and 12 dB at 450 MHz can be realized. Sourced from Process 92.

Contextual Info: Calogic, LLC 237 Whitney Place Fremont, CA 94539 Tel: 510-656-2900 Fax: 510-651-1076 P/ N 2N5457 2N5458 2N5459 Not e: All i.e. J310 JFET Am plifie r Applica t ion s Ge n e r a l Pu r pose ldss lgss gfs eN ( m A( m in ) ) ( pA( m a x ) ) ( m S( m in ) ) ( n V / r oot H z ( t yp) )