CH7Q Search Results

CH7Q

Abstract: n60p HXXXXXXXXX MC6805S2 HD63705 LTC1090 LTC1090AC CD4520 LTC1090C LTC1090M
Contextual Info: LTCT090 \ » u n ü \ ß . TECHNOLOGY F€flTUR€S • Software Programmable Features: Unipolar/Bipolar Conversions 4 Differential/8 Single Ended Inputs MSB or LSB First Data Sequence Variable Data Word Length ■ Built-In Sample and Hold ■ Single Supply 5V, 10V or ±5V Operation

ZENER DIODE 15Y

Abstract: Zener diode 16y c5v1 zener diode c30 C30 DIODE ZENER 16y zener C4V7 22y diode C3V9 zener diode 11y
Contextual Info: BZV49 SERIES C2V7 - C47 SOT89 SILICON PLANAR VOLTAGE REGULATOR DIODES PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS PARAMETER Voltage Range Nominal Tolerance Maximum Forward Current Power Dissipation at Tamb = 25°C Operating and Storage Temperature Range vz

Contextual Info: I Ordering number: EN1789B 2SK545 N0.1789B N-Channel Junction Silicon FET Impedance Converter Applications Applications •Impedance converter applications. • Infrared sensor. Features • Small Iqss• Small Ciss. • Ultracompact package permitting 2SK545-applied sets to be compact.

Contextual Info: Ordering number: EN2020A 2SB1141/2SD1681 N 0 .2020 A PNP/NPN Epitaxial Planar Silicon Transistors SAMYO 18V/1.2A Switching Applications A pplications • Converters, relay drivers, low-voltage and high power AF Amp. F eatures • Low saturation voltage and excellent linearity of hp^.

Contextual Info: SANYO SEMICONDUCTOR COR S3E D • ? en ? Q ? t . QQlDb'lt. T?4 ■ TSA J T-7 S -Q 7 -Ù 7 | O rdering num ber : EN38gQ PINOUT OVERVIEW Tbe LC7368J is a CMOS switcbable DTMF/pulse dialer 1C for European telephone handsets. It incorporates a 31-digit key buffer memory to support a redial function.

40hz bass filter CIRCUIT diagram

Contextual Info: ordering number : EN 271 BA Monolithic Linear 1C L A 79 53 Audio Controller for TV Use Overview The LA7953 Audio Controller is a single-chip, linear IC featuring a built-in expansion circuit. The device also features a 4-input /1-output audio switch, an acoustic mute, a LINE-OUT output, and audio control functions for volume,

2851 transistor npn

Abstract: C 2851 transistor 2SC4428 EN2851 1S001 transistor 800v
Contextual Info: Ordering number: EN 2851 2SC4428 NPN Triple Diffused Planar Silicon Transistor SM YO l i 800V/6A Switching Regulator Applications F e a tu re s . High breakdown voltage, high reliability • F ast switching speed tf: 0.1 ps typ •W ideASO • Adoption of MBIT process

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 2 -MARCH 94 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage Collector-Emitter Voltage VALUE UNIT v CBO 50 V VCEO 45 V Emitter-Base Voltage v EBO 5 V Base Current • b 100 mA Continuous Collector Current

3fs 4a

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 - MARCH 94_ FE A T U R E S * 450 Volt V DS * R dsi « . - 1500 ABSOLUTE MAXIMUM RATINGS. SYM BOL PARAMETER Drain-Source Voltage VALUE UNIT V DS -450 Continuous Drain Current a tT am[j=25°C

Contextual Info: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 2 -J U L Y 94_ FEATURES * 100 Volt V CE0 * 2 A m p continuous current * Low saturation voltage * P,ot=1W a tt ABSOLUTE M A X IM U M RATINGS. Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94 FE A T U R E S * 50 Volt V,DS * R,D Stonr= 10il L o w threshold ABSOLUTE MAXIMUM RATINGS. SYMBOL PARAMETER Drain-Source Voltage Continuous Drain Current at T amtj=25°C VALUE UNIT V DS -50 V •

IC LA7681

Abstract: variable resistor LA7680 LA7681 variable resistor picture M343 3 pin variable resistor DIP48S LA7837 LA7838
Contextual Info: Ordering number : EN 3343A Monolithic Linear 1C LA7680,7681 N0.3343A SA \YO Single-Chip Signal Processor for Color TV Use I Overview The LA7680 and LA7681 signal processors provide all the components required to decode PA L or NTSC Color television signals. On-chip circuits include VIF, SIF, a video processor, a chroma demodulator, and

Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSU E 1 - SEPT 93_ FEATURES * 100 Volt VCE0 * 1 Amp continuous current * P,0,= 1Watt REFER TO ZTX453 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PA RA M ETER SY M B O L Collector-Base Voltage

Contextual Info: SILICON EPITAXIAL PLANAR ABRUPT TUNER DIODE ISSUE 2 - SEPTEMBER 94_ DIODE PIN CONNECTION 2 ANODE CATHODE ILECTRICAL CHARACTERISTICS at Tamb=25°C SYMBOL PARAMETER MIN TYP MAX 30 UNIT Reverse Breakdown Voltage Vr Reverse Voltage Leakage Ir Case Capacitance

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -M A R C H 94_ FEATURES * 200 Volt V DS * RDS on =10« * Low threshold APPLICATIONS * Telephone handsets REFER TO ZVNL120A FOR GRAPHS ABSOLUTE M A X IM U M RATINGS. SY M B O L PARAM ETER

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR F X T 6 1 4 ISSUE 1 - FEB 94 FEATURES * 100 Volt VCE0 * * /C \ ¿ 7 ffh—' //iff Í//H 800 mA continuous current Gain of 10K at lc=500mA * Pt0,= 1W att APPLICATIONS * Lamp, solenoid and relay drivers E

BS170P

Contextual Info: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET BS170P IS S U E 2 - S E P T 93 FE A T U R E S * 60 Volt V DS * R D S c n r5 a REFER TO ZVN3306A FOR G RAPH S ABSOLUTE MAXIMUM RATINGS. SYMBOL Drain-Source Voltage VDS 60 V Continuous Drain Current a tT amb=25°C

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 -MARCH 94_ FEATURES * 60 Volt V,DS * R ,DS on ' 5£i REFER TO ZVP2106A FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Drain-Source Voltage VDS VALUE Continuous Drain Current at Tam(3=25°C

Ztx458

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSU E 2 - MARCH 1994_ FEATURES * 400 Volt VCE0 * 0.5 Am p continuous current * 1 Watt E E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage

Contextual Info: P-CHANNEL ENHANCEMENT MODE VERTICAL D M O S FET ISSUE 2 -M ARCH 94 FEATURES * 100 Volt VDS * RDS.on =8fl / Ds REFER TO ZVP2110A FOR GRAPHS E-Line T092 Compatible ABSOLUTE M A X IM U M RATINGS. PARAMETER SY M B O L Drain-Source Voltage V DS -100 V b -230 mA

Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 2 - M A Y 94_ FEATURES * 12 Volt V CE0 * Gain of 400 at lc=3 A m p s * Very low saturation voltage A P P L IC A T IO N S * Darlington replacement * Flash gu n convertors

Contextual Info: PNP SILICON PLANAR M EDIUM POWER HIGH GAIN TRANSISTOR ZTX790A ISSU E 2 -A P R IL 94_ FEATURES * 40 Volt VCE0 * Gain of 200 at lc=1 Am ps * Very low saturation voltage APPLICATIONS * Darlington replacement * Siren driver

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FXT601B ISSUE 1 - MARCH 94- - FEATURES * 160 Volt VCE0 * Gain of 5K at lc=1 Amp * Ptot= 1 W att APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of T 0 126 and T0220 packages

Contextual Info: PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 2 -MARCH 94_ FEATURES * High voltage APPLICATIONS * T e le p h o n e dialler circuit ABSOLUTE M A XIM U M RATINGS. PARAMETER SYM BO L Collector-Base Voltage V A LU E U N IT V V v CBO