Untitled
Abstract: No abstract text available
Text: V ishay I n t e r t e chn o l o g y, I nc . Capacitors - High Reliability and Life Expectancy AND TEC I INNOVAT O L OGY HDMKP N HN VISHAY ESTA POWER CAPACITORS O 19 62-2012 Capacitors for Power Electronics Key Benefits • • • • • • High RMS current rating: up to 150 A
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17-Mar-10
VMN-PT9067-1201
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chn 723
Abstract: TSMC 180nm dual port sram chn 448 CHN 727 chn 501 chn 711 CHN 450 TSMC 180nm single port sram tsmc 180nm sram TSMC 180nm
Text: CS4100 TM ADPCM Speech Coders Virtual Components for the Converging World The CS4100 family of adaptive differential pulse code modulators ADPCMs is designed to provide high performance solutions for a broad range of applications requiring speech compression and decompression.
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CS4100
CS4100
DS4100
chn 723
TSMC 180nm dual port sram
chn 448
CHN 727
chn 501
chn 711
CHN 450
TSMC 180nm single port sram
tsmc 180nm sram
TSMC 180nm
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CHN 550
Abstract: CHN 545 chn 710 CHN 712 chn 538 CHN 431 CHN 709 CHN 741 chn 738 chn 648 equivalent
Text: R&S ZNC/ZND Vector Network Analyzers User Manual ;xíÇ2 User Manual Test & Measurement 1173.9557.02 ─ 26 This manual describes the following vector network analyzer types: ● R&S®ZNC3 (2 ports, 9 kHz to 3 GHz, N connectors), order no. 1311.6004K12
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6004K12
ZNC-B10
ZN-B14
ZNC-B19
ZNC3-B22
ZNC-K19
VXI-11
CHN 550
CHN 545
chn 710
CHN 712
chn 538
CHN 431
CHN 709
CHN 741
chn 738
chn 648 equivalent
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PAIRGAIN
Abstract: CHN 552 Motorola wireless router Type 0X69 BT8953EPF E1 PCM encoder RS8953B RS8953BEPF RS8953BEPJ RS8953SPB Water level indicator using 8051
Text: RS8953B/8953SPB HDSL Channel Unit The RS8953B is a High-Bit-Rate Digital Subscriber Line HDSL channel unit designed to perform data, clock, and format conversions necessary to construct a Pulse Code Multiplexed (PCM) channel from one, two, or three HDSL channels. The PCM channel
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RS8953B/8953SPB
RS8953B
Bt8370
Bt8970
PAIRGAIN
CHN 552
Motorola wireless router Type 0X69
BT8953EPF
E1 PCM encoder
RS8953BEPF
RS8953BEPJ
RS8953SPB
Water level indicator using 8051
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ST CHN 510
Abstract: 83C97 chn 809 chn 809 ST
Text: 83C97 T e chn o log y, In co rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface and Serial Port PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation S ym bol indentifies product as A u to D U P L E X device. Description
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83C97
10BASE-T
83C97
10BASET)
ST CHN 510
chn 809
chn 809 ST
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chn 809
Abstract: chn 809 ST Transistor TT 2246 transistor chn 037 MO40 TT 2246 transistor capacitor JA8 KMA Series 232 pin diagram of BC 547 SABRE 408
Text: 83C95 T e chn o log y, Inco rp o rate d 10BASE-T Ethernet Transceiver With On Chip Filters And AUI PRELIMINARY October 1994 S E E Q A u to D U P L E X D esignation Symbol indentifies product as AutoDUPLEX device. D escription The 83C95 is a highly integrated analog interface 1C for
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83C95
10BASE-T
83C95
10BASET)
10BASET
chn 809
chn 809 ST
Transistor TT 2246
transistor chn 037
MO40
TT 2246 transistor
capacitor JA8
KMA Series 232
pin diagram of BC 547
SABRE 408
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Transistor TT 2246
Abstract: transistor chn 911 TT 2246 transistor jm31a pulse electronics era transformer transistor chn 037 chn 809 S4744
Text: SEEQ T e chn o log y, Inco rp o rate d 83C96 10BASE-T Ethernet Transceiver With On Chip Filters and Digital Interface PRELIMINARY October 1994 SEEQ AutoDUPLEX Designation Sym bol indentifies product as A u to D U P L E X device. Description The 83C96 is a highly integrated analog interface 1C for
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83C96
10BASE-T
83C96
10BASET)
10BASET
Transistor TT 2246
transistor chn 911
TT 2246 transistor
jm31a
pulse electronics era transformer
transistor chn 037
chn 809
S4744
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chn 807
Abstract: CHN 510
Text: group Data Sheet February 1999 Lucent Technologies Bell Labs Innovations LG1602 Decision Circuit Features Functional Description • Operation up to 3 Gbits/s The LG1602 is a gallium arsenide GaAs decision circuit. It features a sensitive broadband input ampli
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LG1602
DS99-142HSPL
chn 807
CHN 510
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Untitled
Abstract: No abstract text available
Text: 2SK2049 FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET F - III • Features S E R I E S ■ Outline Drawings • Hi jh current • Low on-resistance • Nc secondary breakdown • Low driving power • Hi 3h forward Transconductance ■ Applications
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2SK2049
20Kil)
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CHN 950
Abstract: chn 630
Text: 2SK1823-01R FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-IHA SERIES • Features Outline Drawings • High current • -ow on-resistance • Mo secondary breakdown • .ow driving power • High forward Transconductance
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2SK1823-01R
CHN 950
chn 630
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2SK2081-01
Abstract: SC-65 T151 FA-MT a2396
Text: 2SK2081-01 FUJI POWER MOS-FET N-OHANNEL SILICON POWER MOS-FET F A P -IIA S E R IE S • : eatures Outline Drawings • h igh speed switching • Low on-resistance • Mo secondary breakdown • Low driving power • High voltage • Vcs = ±30V Guarantee • Avalanche-proof
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2SK2081-01
Tc-25Â
SC-65
2SK2081-01
SC-65
T151
FA-MT
a2396
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A2211
Abstract: a2210 2SK1504-01L 2SK1504-01 power mosfet switching TV TCL Schematic
Text: 2 S K 1 5 4 - 0 1 L FUJI PO W ER M O S-F ET , S N- 'HANNEL SILICON POWER MOS-FET F -II S E R IE S I Features Outline Drawings High speed switching Low on-resistance Mo secondary breakdown Low driving power High voltage J S S —±30V Guarantee Avalanche-proof
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2SK1504-01
30S33-O
A2211
a2210
2SK1504-01L
power mosfet switching
TV TCL Schematic
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Untitled
Abstract: No abstract text available
Text: 21S K 1 6 5 9 -L,S<r*ä> FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET SERIES ^ • Features ■ Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■ Applications • Switching regulators
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chn 902
Abstract: 45513 funkamateur VEB M ik ro e le k tro n ik ddr veb L1K30 X1K25 Scans-048 verlag technik TGL DDR
Text: VEB G O L D P F E I L M A G N E T K O P F W E R K HARTMAN N S D O R F Beilage zu „Kennblätter der Magnetköpfe“ B e griffe 06o3IiaM C H H H Term s dependence A b h ä ngigkeit 3HBMCMMOCTb A bschirm kappe 3KpaHHpyiomnH Ko^naK m agnetic sh ie ld case Angaben beziehen sich a u f
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06o3IiaM
DDR-9116
7269dd
chn 902
45513
funkamateur
VEB M ik ro e le k tro n ik
ddr veb
L1K30
X1K25
Scans-048
verlag technik
TGL DDR
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642-102
Abstract: No abstract text available
Text: ísPtgi-'-é-fr-tí-sfc ROHM CORPORATION « s a *» * # 5 t * t / T i 0 8 * * « B > # E S *I3 -1 4 -3 1 TE L 03 34 4 5-5 32 1 F A X (03)3443-7453 2150, C om m erce Drive, San Jose, C A 95131, U.S.A. TE L:(408)432-0500 TW X :910-33B -2116 FAX:{408)434-6444
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910-33B
642-102
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CHN 530
Abstract: chn 707 hiab chn 445 CHN 455
Text: :Q§ LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE : jdfr/ Integrated De vice Technology, Inc. FEATURES: IDT74FCT88915TT 55/70/100/133 mance PCs and workstations. One of the outputs is fed back to the PLL at the FEEDBACK input resulting in essentially
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IDT74FCT88915TT
10MHz
133MHz
MC88915T
800ps
64/-15m
FCT88915TT
MO-150,
CHN 530
chn 707
hiab
chn 445
CHN 455
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BTX94
Abstract: BTX94-600U BTx94 1200 ST BTW48 sot 23 3d SOT-25 0b rbi-e BT138 BTW37 T0220AB
Text: Thyristors and triaos abridged data of principal types book 1 part 5 TRIACS The type number suffix is the VD pM rating Ratings • t (RMS) Tmb * 85°C I trm (A) (A ) I t s m 1) l 2t t - 10ms {A ) dlT dt (A 2s) (A //is) Characteristics dVD V qt d t m8X normal co m m u tatin g m in.
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BT138
T0-220AB)
BTW37
BTW43
T0220AB)
BTW41
BTW48
1200U
BTX94
BTX94
BTX94-600U
BTx94 1200
ST BTW48
sot 23 3d
SOT-25 0b
rbi-e
T0220AB
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BAV46
Abstract: bat59 Pin connection of bk 1085 BAT39 BAT52 BAV72 BAT10 BAW96 BAV71 BAT50R
Text: Microwave solid state mixer diodes M axim um Operating Frequency GHz Type No. book 1 part 8 Typical Noise Figure (dB) Typical Impedance 8.5 750 O perating Temperature Z if Drawing i'e fe re n c e O u tlin e <oc> (Í2) GERMANIUM POINT CONTACT 40 AAY34 - 5 5 t o +100
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AAY34
S0D-42
BAT10
SAT11
BAT39
CV7762)
BAT39A
OD-42
BAT50R
SO-26
BAV46
bat59
Pin connection of bk 1085
BAT39
BAT52
BAV72
BAW96
BAV71
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DIODO LN4148
Abstract: A2 diodo zener diodo zener 5.1 B2 diodo 1n4148 diodo s4 diodo s4 81 6.8 B2 diodo a52 zener diode diodo 72 DIODO LED
Text: Microminiature devices diodes book 1 part 3 Outline SO T-23 Type No. | | » Q £ BAV70 X4 BAW66 X5 BAV99 X6 Description Common cathode double diodo Common anode double diodo Two diodes i n series intended for high speed switching. Vrrm Ifrm Max. Reverse Recovery Time, t rr
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OT-23
BAV70
BAV99
1N4148
200mW
OT-23
BZX84
h--22->
crt6-25
DIODO LN4148
A2 diodo zener
diodo zener 5.1 B2
diodo 1n4148
diodo s4
diodo s4 81
6.8 B2 diodo
a52 zener diode
diodo 72
DIODO LED
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OA90 diode
Abstract: OA90 germanium diode oa47 diode OA95 diode diode aa119 Germanium Diode OA91 DIODE OA95 AA119 DIODE OA90 OA91
Text: Diodes Milliard diodes are supplied bandoliered. Exceptions are noted below. Bandolier packing DO-7 D O -35 SOD-17 7000 9000 9000 F o r fu rth e r details conta ct M illia rd House. germanium point contact diodes book 1 part 3 Outline DO-7 Drawing reference D1
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DO-35
OD-17
AA119
h--22->
crt6-25
OA90 diode
OA90 germanium diode
oa47 diode
OA95 diode
diode aa119
Germanium Diode OA91
DIODE OA95
DIODE OA90
OA91
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ne 565 pll
Abstract: fct88915 idt74fct88915
Text: :Q§ LOW SKEW PLL-BASED CMOS CLOCK DRIVER WITH 3-STATE : jdfr/ In te g ra te d De v ic e T e c h n o lo g y , Inc. FEATURES: IDT74FCT88915TT 55/70/100/133 mance PCs and workstations. One of the outputs is fed back to the PLL at the FEEDBACK input resulting in essentially
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IDT74FCT88915TT
10MHz
133MHz
MC88915T
800ps
64/-15mA
FCT88915TT
MO-150,
PSC-4032
ne 565 pll
fct88915
idt74fct88915
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BZX87
Abstract: zener bzx87 c5v8 zener
Text: Silicon voltage regulator diodes low power cont. book 1 part 3 Outline SOD—51 Drawing reference V 1 ,5 W (Tamt)*= 25°C) Ì 5% voltage toi «rance Type No. BZX87 Nom. Zerter Voltage (V) Min. Vottage (V) —C5V1 -CSV6 5.1 5.6 4.8 5.2 5.8 6.4 Typ. Temp.
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BZX87
h--22->
crt6-25
BZX87
zener bzx87
c5v8 zener
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transistor NPN 3D SOT 153
Abstract: BRY39 BCY87 TAG thyristor BFR49 si controlled tetrode switch BRY3 BCY88 BCY89 BR101
Text: Transistors m icrowave transistors Type No. M L 1 5/2 B M L 1 5/4 B Drawing reference VCBO max. V N-P-N transistor fo r am plifiers up to S—band frequencies AN 20 0.025 N-P-N L —band p ow er transistors intended fo r com m on e m itter operation in class AG o r B
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BFR49
ML15/2B
ML15/4B
0-26V
BCY87
BCY88
BCY89
h--22->
crt6-25
transistor NPN 3D SOT 153
BRY39
TAG thyristor
si controlled tetrode switch
BRY3
BR101
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6TZ61
Abstract: 6TZ71 IP40G DDR-102 TZ62 LTSP VEB M ik ro e le k tro n ik Scans-048 TZ716 der ddr
Text: Elektronische Zeitrelais der Reihe 6 TZ 50. 6 TZ 72 •T Z 71 K» \ Q l« '« 4 • a— » i- 1Still , K « * 1 / % - « * I 1- B 10 C' 1 - Elektronische Zeitrelais « H au p tken n w erte S ch u tzg ra d : IP 40 G e h ä u s e K riech- u n d Luftstrecken
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DDR-1026
6TZ61
6TZ71
IP40G
DDR-102
TZ62
LTSP
VEB M ik ro e le k tro n ik
Scans-048
TZ716
der ddr
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