CI 356 J Search Results

Contextual Info: 346 MONROE AVENUE • BOX 142 • KENILWORTH, N.J. 07033 • PHONE 908 272-9262 • FAX (908) 272-7630 E-M AIL: VENTRONICS @ PRODIGY . NET W W W .VENTRONICSINC.COM CHIP CERAMIC CAPACITORS STANDARD SMT CHIP P/N BREAKDOWN 1206 N 472 J 101 N X050 H T M Marking

Contextual Info: 4 TH 1S DRAW 1NG A 3 I S UNPUBL 1S H E D , C O P Y R 1GHT 20 RE L E A S E D BY TYCO E L E C T R O N I C S FOR P U B L I C A T I O N CORPORATION. ALL PERFORMANCE RIGHTS 2 20 LOC D I ST R E SE RV ED. R EVISIO N S P REOUI REMENTS: H: 5 5 dB LTR D E S C R 1P T 1ON

sw 2604 ic

Abstract: UPSC4 AI84 marking 8206 ic sw 2604
Contextual Info: ~Mini.Circuits 50 ohms cnd 75 ohms 42KI-tzto4.2GH~ WAY-00 e PSC-4 ZFSC-4 FREQ ~A.NGE MHz M006. NO. PSC—4 PSC-4-l case AOl PSC—4—IW upsC-4-4-7s 15C4—3 PSC—d—8 •PSC-4-4 PSC-AA PSC-4A-4 ~e c137.PSC—4A-478 ZBSC-4 L f~.-L~ o I-2~ I-sw 1-2w o 25-250

ECG1042

Abstract: Philips ECG
Contextual Info: PHILIPS E C G INC 17E bbS3TEÛ 000457A h ^ 77^05-07 S e m ico n d u c to rs E IN HIGH H IN LOW E AC GNO E 1] vcc GNO 7 ] NC J ] OUT T l AC A l GNO TOP VIEW Absolute Maximum Ratings Symbol Rating Unit Supply Voltage Vcc 20 V Input Voltage VlN ±3 V Power Dissipation

Contextual Info: K D MDIMTES m km l DATA CONTAINED IN T H » OOCLHB/T IS PROPRIETARY TO TBQHPETSt B-ECTTgUICS INC. AMJ SHALL WJT BE OISODSBJ, CEPIH3 DR USED R S p i x n œ e / r dr h a h jf ac tu * v i t k u t S MOTTO PBWISSION, DASH ND -2C -2T -4 C -4T -2CS -2TS MCS -4TS

Contextual Info: T-13/4 InG aA lP U ltra Bright LED Ultra Bright L E D s High Perform ance ITLGA247 Product Featu res • InGaAlP Technology • J-V/* 5 mm Package • High Intensity Green Light (A.p = 574 nm) Emission • Water Clear Lens • Elliptical Radiation Pattern (60° Horizontal, 30°

EDI8F321024C

Contextual Info: EDI8F321024C 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

Contextual Info: TIMING CHART ü DRAM MODULES READ CYCLE W RITE CYCLE EARLY WRITE 350 ELECTRONICS DRAM MODULES TIMING CHART II WRITE CYCLE (OË CONTROLLED WRITE) READ-MODIFYW RITE CYCLE w - ac — _ i lO E z f ^ H ^ M j r V A LID l A T X / V D A T A OU T io s ' \~ ~ / rn

Contextual Info: GREEN T - I V4 U l t r a B r i g h t L E D Ultra Bright LE D s High P e rfo rm a n c e ITLGD240P $ in JS- P roduct Featu res • G a P T ech n o lo g y ' • T1 ’/« 3 mm P ackag e • H igh Intensity G ree n Lig h t (>.p = 567 nm) E m is s io n • W ater C le a r Le n s

8080 databook

Contextual Info: NSCl National Semiconductor January 1994 74LVX 14 Low V o ltage Hex In verter w ith Schm itt T rig g er Input General Description Features The 'LVX14 contains six inverter gates each with a Schmitt trigger input. They are capable of transforming slowly changing input signals into sharply defined, jitter-free output

AN7320

Abstract: AN7112 ss6050 T-77-05-0 ELECTRONIC72C AN732
Contextual Info: PANASONIC INDL/ELEK -CIO 72 693-2852 PANASONIC DE; | b^EflSS 0007741 3 | I N D L , E L E C T R ON I C 72C ' 7t —t V T N I I C 07741 AN7320 T “ "?"?" AN7320 B U iS ^ |i |I|S & /P re-A m p lifier C ircuit AN7320 l±, f i t E i l i n r ' J T • ¡Hr $

LF357

Abstract: LF355 356B lf355 motorola lf356 355b LF355B LF367 LF 355 LF356 equivalent
Contextual Info: MO T O R O L A SC -[TELECOM 6 3 6 7 2 5 3 MOT OROLA SC M 01 » | b3b7ES3 T E LECOM □ b 0 IE 80495 MONOLITHIC JFET OPERATIONAL AMPLIFIERS SILICON MONOLITHIC INTEGRATED CIRCUITS M O N O L IT H IC JFE T INPUT O P E R A TIO N A L A M P L IFIE R S These internally compensated operational amplifiers incorporate

Mil-Std-883 Wire Bond Pull Method 2011

Abstract: Single side polished Si
Contextual Info: AUSTIN SEMICONDUCTOR INC bOE i> m T0Ü2117 D DQG 33 ci IMb M A U S T MT5C2516 DIE 16K x 16 LATCHED SRAM MICRON -T - 4 f c - 2 4 - l 3 MILITARY SRAM DIE 16K x16 SRAM WITH ADDRESS/ DATA INPUT LATCHES FEATURES • Fast access times: 20,25 and 35ns

14321

Abstract: EDI8F321024V15MNC EDI8F321024V15MZC EDI8F321024V20MNC EDI8F321024V20MZC EDI8F321024V25MNC 8G321
Contextual Info: EDI8F321024V 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •1024Kx32 bit CMOS Static RAM The EDI8F321024V is a high speed 32 megabit Static RAM module organized as 1024K by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES n DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy

EDI8F321024C

Abstract: EDI8F321024C15MNC EDI8F321024C15MZC EDI8F321024C20MNC EDI8F321024C20MZC EDI8F321024C25MNC
Contextual Info: EDI8F321024C 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •1024Kx32 bit CMOS Static RAM The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages

EDI8F321024C

Abstract: EDI8F321024C15MNC EDI8F321024C15MZC EDI8F321024C20MNC EDI8F321024C20MZC EDI8F321024C25MNC 15521
Contextual Info: EDI8F321024C 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024Kx32 bit CMOS Static RAM The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages

FET321 MANUAL

Abstract: optoacoplador FET321 FET521 FEP315-100A1S1D2B0A1A0M1A1C1 FEP315 FET3251 transformador FET325 FET325 manual
Contextual Info: SM/FEX300/FEX500/ATEX/IECEX-X1 ProcessMaster / HygienicMaster FEX300, FEX500 ATEX / IECEx Zone 1, 2, 21, 22 Sicherheitshinweise für elektrische Betriebsmittel für explosionsgefährdete Bereiche gemäß Richtlinie 94/9/EG ATEX und IEC60079-0 (IECEx) Magnetisch-induktiver Durchflussmesser

2N6506 applications

Abstract: 2N6506
Contextual Info: 2N6504* thru* 2N6509* T hyristors S ilic o n Controlled Rectifiers ^Motorola preferred devices . . designed primarily for half-wave ac control applications, such as motor controls, heating controls and pow er supp ly crowbar circuits. • G la ss Passivated Junctions with Center Gate Fire for Greater Parameter

EDI8F321024C

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES  DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ

Contextual Info: EDI8G321024V 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features 1024Kx32 bit CMOS Static Random Access Memory • Access Times: 12, 15, 17, and 20ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package

IC 656

Contextual Info: I N P ACKAGL D I M E N S IO N S l \ m m (INCHF.S) Lead Count 20 28 44 Metric A B Max Min Max Min 10.03 9.78 9.04 8.89 12.57 12.32 11.58 11.43 17.65 17.40 16.66 16.51 English A B Max Min Max Min .395 .385 .356 .350 .495 .485 .456 .450 .695 .685 .656 .650

Contextual Info: White Electronic Designs EDI8F321024C 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ

ST 7915

Abstract: LF247 LF247AN LF347AD CDIP-14
Contextual Info: 7T5T237 S G S -T H O M E H GGESTMf l S LF147/A/B LF247/A/B LF347/A/B S O N SLC S G 3GE S-THOMSON » J-FET INPUT QUAD OP-AMPs LOW POWER CONSUMPTION WIDE COMMON-MODE AND DIFFERENTIAL VOLTAGE RANGE LOW INPUT BIAS AND OFFSET CURRENT OUTPUT SHORT-CIRCUIT PROTECTION