1024KX4 Search Results

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES n DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy

EDI8F321024C

Contextual Info: EDI8F321024C White Electronic Designs 1024Kx32 Static RAM CMOS, High Speed Module FEATURES  DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ

Contextual Info: ^EDI EDI8F321024C ELECTRONS DESIGNS INC. • High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in

EDI441024C

Abstract: A517 transistor a6 s a213c
Contextual Info: EDI441024C ^EDI E lectro de D*algns I n c ^ 1Mx4 Dynamic RAM CMOS, Monolithic High Performance Four Megabit Monolithic DRAM The EDI441024C is a fast page mode4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

DCH3

Abstract: EDI441024C ca011 a719
Contextual Info: ELECTRONIC DESIGNS INC ^SEDI St»elrecle D M lg n t In c i 3QE ]> 11 ' ' ' • 1 The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process, combined with silicide technology and a single transistor

EDI441024C

Abstract: a517
Contextual Info: moi EDI441024C Electrode D *«lgni Inop High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

14321

Abstract: EDI8F321024V15MNC EDI8F321024V15MZC EDI8F321024V20MNC EDI8F321024V20MZC EDI8F321024V25MNC 8G321
Contextual Info: EDI8F321024V 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •1024Kx32 bit CMOS Static RAM The EDI8F321024V is a high speed 32 megabit Static RAM module organized as 1024K by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy

EDI8F321024C

Abstract: MC4572
Contextual Info: ^ ED I EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4

Contextual Info: White Electronic Designs EDI8F321024C 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ

Contextual Info: ^EDI EDI8F321024C ELECTRONIC DESIGNS INC. • High Speed 32 Megabit SRAM Module 1024KX32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in

EDI8F321024C

Contextual Info: EDI8F321024C 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

1Mx4 Dynamic RAM

Abstract: transistor A7 ED1441024C
Contextual Info: _ EDI441024C ^EDI Electronic D««igna Inep High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

Contextual Info: moi EDI441024C E le ctrod e D e sig ni I n o ^ High Performance Four Megabit Monolithic DRAM 1Mx4 Dynamic RAM CMOS, Monolithic The EDI441024C is a fast page mode 4096K bit high performance, low power CMOS Dynamic RAM organ­ ized as 1024Kx4. The use of four-layer poly process,

Contextual Info: EDI8F321024CA 1024Kx32 SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024CA is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages on an epoxy laminate FR4 board.

EDI8F321024C

Abstract: EDI8F321024C15MNC EDI8F321024C15MZC EDI8F321024C20MNC EDI8F321024C20MZC EDI8F321024C25MNC 15521
Contextual Info: EDI8F321024C 1024Kx32 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024Kx32 bit CMOS Static RAM The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 bits. This module is constructed from eight 1024Kx4 Static RAMs in SOJ packages

Contextual Info: EDI8F321024C Electronic Designs Inc. High Speed 32 Megabit SRAM Module 1024Kx32 Static RAM CMOS, High Speed Module Features The EDI8F321024C is a high speed 32 megabit Static RAM module organized as 1024K words by 32 1024Kx32 bit CMOS Static Random Access Memory

Contextual Info: HEDI EDI8F16256C ELECTRONIC DESIGNS INC., High Speed 4 Megabit SRAM Module 256Kx16 CMOS, High Speed Programmabie, Static RAM Module Features The EDI8F16256C is a 4096K-bit high speed CMOS Static RAM Module consisting of four 4 256Kx4 Static RAMs in j-leaded (SOJ) chip carriers surface-mounted

Contextual Info: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory

Contextual Info: WZ4KX3Ö 5KAM Module 1024Kx36 Static RAM CMOS, High Speed Module Features 1024Kx36 bit CMOS Static The EDI9G361024C is a high speed 36 megabit Static RAM Random Access Memory module organized as 1024K words by 36 bits. This module • Access Times: 17, 20 and 25

T 9722

Abstract: Diode T 9722 EDI8G322048C
Contextual Info: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package

Contextual Info: EDI8M16256C 35/45/55/70 Module The fu tu re . •■ A E>VAM C E OKIFOIF8MATDOM 256Kx16 SRAM CMOS, High Speed Module Features The EDI8M16256C is a 4096K 256Kx16bit High Speed Static RAM module constructed using sixteen EDI81256C (256Kx1) Static RAMs in ieadless chip

IS61WV10248EDBLL

Contextual Info: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

IS61WV10248EDBLL-10TLI

Contextual Info: IS61WV10248EDBLL IS64WV10248EDBLL 1M x 8 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC FEATURES • High-speed access times: 8, 10, 20 ns • High-performance, low-power CMOS process • Multiple center power and ground pins for greater noise immunity • Easy memory expansion with CE and OE options

256KX16

Abstract: t1is I-D014 x313 dab circuitry RSV40
Contextual Info: ELECTRONIC DESIGNS INC m o i Electronic D t d g n s Inc« S1E J> • 3230114 DD01P7S 711 M E L D _EDI8M16256C High Speed 4 Megabit SRAM Module 256KX16 CMOS, High Speed Programmable, Static RAM Module Features The EDI8M16256C is a 4096K-bit high speed CMOS