CI5 5T Search Results

Contextual Info: DR-120 120W Single Output Industrial DIN RAIL Power Supply series | Features : AC input range selectable by switch Protections: Short circuit / Overload / Over voltage / Over temperature Cooling by free air convection Can be installed on DIN rail TS-35/7.5 or 15

Contextual Info: Sb E D • 7 ci 2 eJS37 GOB'Ulfi STÔ ■ S G T H SCS-THOMSON T - 75W / - * / ¿ 5 M044 7 S G S- THOMSON 128 X 128 DIGITAL SWITCHING MATRIX ■ 128 INPUT AND 128 OUTPUT CHANNEL DIGI­ TAL SWITCHING MATRIX non blocking ■ TYPICAL APPLICATION IN PABX > PCM INPUTS AND OUTPUTS MATUALLY

froid et clim

Contextual Info: CATALOGUE 867 C O N D E N S A T E U R S A U M IC A Sommaire CONDENSATEURS AU M IC A Page • Caractéristiques électriques Marquage Spécification à la commande 2 • Généralités 3 • Feuilles particulières des condensateurs au mica CA 15 CA 20 CA 131

Contextual Info: C T SCS-THOMSON * 7 / ^ D g ^ @ [lt[l T r [E i(Q iD (g i M 3 4 8 8 256 x 256 DIGITAL SWITCHING MATRIX PR ELIM INARY DATA • 256 INPUT AND 256 OUTPUT CHANNEL CMOS DIGITAL SWITCHING MATRIX COM­ PATIBLE WITH M088 ■ BUILDING BLOCK DESIGNED FOR LARGE

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4532DA726 32 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4532DA726 is a 33,554,432 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 128 M SDRAM : µPD45128441 are assembled.

D546

Abstract: GG 79
Contextual Info: TO SH IB A 2 >1 TLCS-870/X If ^ - '7 ? 2Ü CM P A, g 7 y V t 7*'J s. V \ 3 - K 1110 lg g g J F ZF CF H F SF V F 16Ü E A-g 8+g Z Z C H 2 V S Î l 67 0110 0111 T * j- A U - ? y h V V X ? geo b it$X L i t o ^ -Y V - 7 5 ? t i , A<g(D b ê “ V’ iZ - ty h -Ztl, A^gC O t ê “ 0” K ? V 7 2 t i t t o

2N5250

Abstract: 2N5251 mug 14 431 NIL-S-19500 2N4865 2N5151 FSC5961 2N5250 JAN Xelerated SAA 1006
Contextual Info: I I I IWE-FQUND I HIL-s-19500/380B 4 June 1991 SVPSl!5EDItK MIL-s-19500/180A( SLl 17 Septerber 1968 N2L2TARY SPECIP3CATICN SSN203N3WXUR DSV2CE, TWSISIWR,NPN,S2LIIXN,m TYPES 2N4865,2N5250,2N5251,JAIWX, JAN2’XV, ~ JANS MS s~ification is approvedfor w hy e21 Ceptusxts and lq~cies of the Deprt.uentof Defense.

Contextual Info: U A RfìO'i HARRIS æ S E M I C O N D U C T O R Ê U Dual 125 MHz Video Current Feedback Amplifier juiy 1994 Features • M M Description Wide Unity Gain B andw id th. 125MHz • Slew R a te . 475V/ns

ST95010

Contextual Info: r= J *7 Æ * S G S -T H O M S O N ST95010 B D g ® I [ L l l( g T O ( ô K ! 1 0 ( g i SERIAL ACCESS SPI BUS 1K (128 x 8) EEPROM • ■ ■ ■ ■ ■ 100,000 ERASE/WRITE CYCLES 40 YEARS DATA RETENTION SINGLE 4.5V to 5.5V SUPPLY VOLTAGE SPI BUS COMPATIBLE SERIAL INTERFACE

1 - bit full adder multisim

Abstract: MACH4A
Contextual Info: MACH 4A Family BEYO N D PERFO RM A N CE High Performance EE CMOS Programmable Logic With Maximum Ease Of Use DISTINCTIVE CHARACTERISTICS Unique Features ♦ High-performance, EE CMOS 3.3-V CPLD Family ♦ First-Time-Fit and Good Refit ♦ High Speed — 5.5ns t PD Commercial and 7.5ns t PD Industrial

MC-4516CB64ES

Abstract: MC-4516CB64ES-A10B MC-4516CB64PS MC-4516CB64PS-A10B PD45128841
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CB64ES, 4516CB64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CB64ES and MC-4516CB64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64ES, 4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128163 are assembled.

MC-4516CD64ES

Abstract: MC-4516CD64ES-A10B MC-4516CD64PS MC-4516CD64PS-A10B PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD64ES, 4516CD64PS 16 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD64ES and MC-4516CD64PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128 M SDRAM: µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB64S 4 M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-454CB64S is a 4,194,304 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 4 pieces of 64 M SDRAM: µPD4564163 (Revision E) are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD645 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CD645 is a 16,777,216 words by 64 bits synchronous dynamic RAM module on which 16 pieces of 64M SDRAM: µPD4564841 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-454CB645 4M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454CB645 is a 4,194,304 words by 64 bits synchronous dynamic RAM module on which 4 pieces of 64M SDRAM : µPD4564163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CC725 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC725 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM: µPD4564841 are assembled.

ci5 5t

Contextual Info: HYM71V16635HCT6 16Mx64, 8Mx16 based, PC133 DESCRIPTION The Hynix H YM 71V16635HC T6 Series are 16M x64bits Synchronous DRAM M odules. The m odules are com posed o f eight 8M x16bits CMOS Synchronous DRAM s in 400m il 54pin TSOP-II package, one 2K bit EEPROM in 8pin TS SO P package on a 168pm glass-epoxy

MC-4516CC726

Abstract: MC-4516CC726F-A10 MC-4516CC726F-A80
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CC726 16M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-4516CC726 is a 16,777,216 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 64M SDRAM : µPD4564841 Rev. E are assembled.

ml86v766

Abstract: ITU-R601 ML87V2105 ML87V2105TB R601 TQFP100-P-1414-0
Contextual Info: OKI Semiconductor ML87V2105 PEDL87V2105-02 Issue Date: Dec. 20, 2003 Preliminary Video Signal Noise Reduction IC with a Built-in 5.6 Mbit Frame Memory GENERAL DESCRIPTION The ML87V2105 comprises a 5.6 Mbit frame memory, a noise reduction filter, and a memory controller to reduce

MC-4516CD641ES

Abstract: MC-4516CD641ES-A10 MC-4516CD641ES-A80 MC-4516CD641PS MC-4516CD641PS-A80 PD45128163
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516CD641ES, 4516CD641PS 16M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM Description The MC-4516CD641ES and MC-4516CD641PS are 16,777,216 words by 64 bits synchronous dynamic RAM module (Small Outline DIMM) on which 8 pieces of 128M SDRAM: µPD45128163 are assembled.

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CA726 8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CA726 is a 8,388,608 words by 72 bits synchronous dynamic RAM module on which 9 pieces of 64M SDRAM : µPD4564841 are assembled.

CDC2509

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4564DC726 64 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description The MC-4564DC726 is a 67,108,864 words by 72 bits synchronous dynamic RAM module on which 36 pieces of 128 M SDRAM: µPD45128441 are assembled.

MC-458CB646LFA-A80

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-458CB646 8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-458CB646 is a 8,388,608 words by 64 bits synchronous dynamic RAM module on which 8 pieces of 64M SDRAM: µPD4564841 are assembled.