CIRCUIT AT MEGA 32 Search Results

TCM8240MD

Abstract: 8086 hex code TCM8240 DHT 11 an 80171 08123 B 8016 8058 FF124 48208
Contextual Info: TCM8240MD Ver 1.2 TOSHIBA C2MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TCM8240MD Ver 1.2 13/Nov/04 TENTATIVE 1.3 Mega pixel sensor chip TCM8240MD is an area color image sensor , at 1.3 Mega-pixels of array resolution 1300x 1040 , incorporating a camera signal processor . The optical format is 1/3.3 inch, of which small size is suitable for

Contextual Info: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available

Contextual Info: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available

Contextual Info: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available

Contextual Info: High Current Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing Material: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available

Littelfuse 2981000

Abstract: fuse mega
Contextual Info: Bolt-down Fuses MEGA Fuse Rated 32V Specifications Interrupting Rating: Voltage Rating : Operating Temperature Range: Terminals: Mounting Torque: Packaging: 2000A @ 32 VDC 32 VDC -40˚C to + 125˚C Copper Ag available M6 or M8 bolts available 8-14 Nm M6

15S200

Abstract: fuse mega
Contextual Info: Bolt-down Fuses MEGA Fuse Rated 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: 40˚C to + 125˚C Time-Current Characteristics / Schmelzzeit-Grenzwerte % of Rating % des Nennstromes Die von Littelfuse entwickelte und patentierte MEGA-Sicherung

Contextual Info: Bolt-down Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: Voltage Rating: Operating Temperature Range: Housing: Terminals: 2000A @ 32 VDC 32 VDC -40˚C to + 125˚C PPA 33%/35% GF Copper (Silver plated copper available) M6 or M8 bolts available

0298175

Abstract: ISO 8820-5 300-500A 0298300
Contextual Info: Bolt-down Fuses MEGA FUSE RATED 32V Specifications Interrupting Rating: 2000A @ 32 VDC Voltage Rating: 32 VDC Operating Temperature Range: -40˚C to + 125˚C Housing: PPA 33%/35% GF Terminals: Copper (Silver plated copper available) M6 or M8 bolts available

jeida 88 pin memory card

Abstract: jeida dram 88 pin
Contextual Info: DRAM CARD 8 Mega Byte KMCV5322000 3.3V Operating 2M x 32 / 4M x 16 Fast Page Mode G ENER AL DESCRIPTIO N FEATURES • Performance range : The KMCV5322000 is the industry standard high capacity DRAM memory card and consists o( SAMSUNG'S advanced TSOP 1Mx4 DRAM devices

KMCJ532512

Abstract: jeida dram 88 pin
Contextual Info: 2 Mega Byte DRAM CARD K M C J532512 512K X 32 / 1 M X 16 F ast P age M ode GENERAL DESCRIPTION FEATURES The KMCJ532512 is the industry standard high capacity DRAM memory card and consists of • Performance range : SAMSUNG'S advanced TSOP 4M B/W DRAM devices.

jeida dram 88 pin

Abstract: KMCJ5324100
Contextual Info: DRAM CARD 16 Mega Byte KMCJ5324100 4M X 32 / 8M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range • The KMCJ5324100 is the industry standard high capacity DRAM memory card and consists of SAMSUNG'S advanced TSOP 4Mx4 DRAM devices. The SAMSUNG memory card family is designed to

KMCJ5322000

Abstract: jeida dram 88 pin
Contextual Info: 8 Mega Byte DRAM CARD KMCJ5322000 2M X 32 / 4M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The KMCJ5322000 is the industry standard high capacity DRAM memory card and consists of SAMSUNG'S advanced TSOP 1Mx4 DRAM devices. The SAMSUNG memory card family is designed to

jeida dram 88 pin

Abstract: KMCJ5321000
Contextual Info: 4 Mega Byte DRAM CARD KMCJ5321000 1M X 32 / 2M X 16 F a s t P a g e M o d e GENERAL DESCRIPTION FEATURES • Performance range : The KMCJ5321000 is the industry standard high capacity DRAM memory card and consists o SAMSUNG'S advanced TSOP 4M DRAM devices.

jeida dram 88 pin

Contextual Info: 16 Mega Byte DRAM CARD KMCV5324000 3.3V Operating 4M x 32 / 8M x 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The KMCV5324000 is the industry standard high capacity DRAM memory card and consists of SAMSUNG'S advanced TSOP 4Mx4 DRAM devices

jeida dram 88 pin

Abstract: KMCJ5324000
Contextual Info: 16 Mega Byte DRAM CARD KMCJ5324000 4M X 32 / 8M X 16 Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range : The K M C J5324000 is the industry standard high tRAC tCAC IRC SAMSUNG'S advanced TSOP 4M x4 DRAM devices. KMCJ5324000 -6 60 ns 15 ns

iaa 180

Contextual Info: DRAM MODULE 32 Mega Byte KMM53681OOAH Fast Page Mode 8Mx36 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 400 mil Package GENERAL DESCRIPTION FEATURES The Samsung KMM5368100AH is a 8M bit x 36 Dynamic RAM high density memory module. The • Performance Range1

KM48C2100AJ

Abstract: KMM5322208AU KMM532
Contextual Info: DRAM MODULE 8 Mega Byte KMM5322208AU/AUG Fast Page Mode 2Mx32 DRAM SIMM , 1K Refresh, 5V Using 2Mx8 B/W DRAM with AND Gate GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 5322208AU is a 2M bit x 32 D ynam ic RAM high density m em ory module. The

CX-53

Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
Contextual Info: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS

Contextual Info: DRAM MODULE 16 Mega Byte KMM5324000AKV/AKVG Fast Page Mode 4M x32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM5324000AKV is a 4M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5324000AKV consists of eight CMOS

KMM5322000AW

Contextual Info: DRAM MODULE_ 8 Mega Byte KMM5322000AW/AWG Fast Page Mode 2Mx32 DRAM SIMM , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5322000AW is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322000AW consists of four CMOS

mega 329

Contextual Info: DRAM MODULE 8 Mega Byte KMM5322200W/WG Fast Page Mode 2M x32 DRAM SIM M , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung K M M 5322200W is a 2M bit x 32 D ynam ic RAM high density m em ory module. The

KM44C4100AJ

Abstract: KM44C4100A KMM5324100AV
Contextual Info: DRAM MODULE_ j _ 16 Mega Byte KMM53241OOAV/AVG Fast Page Mode / 4Mx32 DRAM SIMM , 2K Refresh , 5V / Using 16M DRAM with 400 mil Package . GENERAL DESCRIPTION FEATURES The Samsung KMM53241OOAV is a 4M bit x 32 Dynamic RAM high density memory module. The

KM416C1000AJ

Contextual Info: DRAM MODULE 4 Mega Byte KMM5321OOOAW/AWG Fast Page Mode 1Mx32 DRAM S IM M , 4K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321000AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321000AW consists of two CMOS