KMM532 Search Results

s - ck5t

Abstract: CA52
Contextual Info: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KM416C1200AJ

Abstract: ra57
Contextual Info: DRAM MODULE KMM5321200AW/AWG KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM, 1K Refresh, 5V, using 1Mx16 DRAM G EN ER AL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification

KMM5321000BV-7

Abstract: KMM5321000BV-6 1Mx4 dram simm caso Samsung Capacitor DO30 KMM5321000BV-8
Contextual Info: SAMSUNG ELECTRONICS INC b?E D • O O lS llb KMM5321000BV/BVG fi^b DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tftAC • • • • • • • tcAc I rc KMM5321000BV-6 60ns 15ns 110ns KMM5321000BV-7 70ns

Contextual Info: DRAM MODULE KMM53216004BK/BKG 4 Byte 16Mx32SIMM 16Mx4 base Revision 0.0 Sept. 1997 DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 (Sept, 1997) • Removed two AC parameters t CACP(access time from CAS) and tAAP(access time from col. addr.) in A C CHARACTERISTICS.

KMM5322000BV

Contextual Info: SAMSUNG ELECTRONICS INC b?E ]> • 7^4142 KMM5322000BV/BVG GG1S1SÔ 24S I SM6 K DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: • • • • • • • I rac tcAC KM M5322000BV-6 60ns 15ns KM M5322000B V'7

Contextual Info: KMM5328004BK/BKG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 04BK is a 8M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: b?E D S A M S UN G E L E C T R O N I C S INC • TThMlME 00132=12 BIM ■ S M G K KMM5328000V/VG/VP DRAM MODULES 8Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tRAC • • • • • • • tcAC tRC KMM5328000V-6 60ns

Contextual Info: SAMSUNG ELECTRONICS INC b4E D • TTtmHE G O mb Df l 337 « S r i G K KMM5322000AV/AVG DRAM MODULES 2M x32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflA C KMM5322000AV- 7 KMM5322000AV- 8 KMM5322000AV-10 • • • • •

8Mx32 dram

Abstract: Samsung Capacitor sse
Contextual Info: DRAM MODULE 32 Mega Byte KMM5328000AV/AVG Fast Page Mode 8Mx32 DRAM SIMM , 4K Refresh , 5V Using 16M DRAM with 400 mil Package G EN E R A L DESCRIPTION FEATURES • Performance Range: The Sam sung KMM5328000AV is a 8M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory m odule. The

M53241

Contextual Info: DRAM MODULE 16 Mega Byte X KMM53241OOAK/AKG Fast Page Mode 4Mx32 DRAM SIMM , 2K Refresh , 5V Using 16M DRAM with 300 mil Package . GENERAL DESCRIPTION FEATURES • Performance Range: The Samsung KMM5324100AK is a 4M bit x 32 tRAC 50ns 60ns 70ns 80ns D ynam ic RAM high density m em ory module. The

KMM5321000BV-6

Contextual Info: KM M5321000BV/BVG DRAM MODULES 1Mx32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM5321000BV is a 1M bits x 32 Dynam­ ic RAM high de nsity m em ory module. The Samsung KMM5321000BV co n s is t of eig h t CMOS 1 M x 4 bit

CX-53

Abstract: KM48C2100A cx53 KMM53221 KM48C2100AJ
Contextual Info: DRAM MODULE 8 Mega Byte KMM53221OOAU /AUG Fast Page Mode 2Mx32 DRAM SIMM , 2K Refresh, 5 Using 2Mx8 B/W DRAM J GENERAL DESCRIPTION FEATURES The Samsung KMM5322100AU is a 2M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5322100AU consists of four CMOS

Contextual Info: PRELIMINARY KMM5321OOOW/WG DRAM MODULES 1M x32 DRAM SIMM Memory Module GENERAL DESCRIPTION FEATURES • Performance range: tRAC KM M5321000W-7 KMM5321000W-8 KM M5321000W-10 70ns 20ns 130ns 80ns 20ns 150ns 100ns 25ns 180ns Fast Page Mode operation CAS-before-RAS refresh capability

HX-5v

Contextual Info: DRAM MODULE 4 Mega Byte KMM5321200AW/AWG Fast Page Mode 1Mx32 DRAM SIMM , 1K Refresh , 5V Using 1Mx16 Byte Word Wide DRAM 7 GENERAL DESCRIPTION FEATURES The Samsung KMM5321200AW is a 1M bit x 32 Dynamic RAM high density memory module. The Samsung KMM5321200AW consists of two CMOS

Contextual Info: KMM5328000CK/CKG KMM53281OOCK/CKG DRAM MODULE KMM5328000CK/CKG & KMM53281 OOCK/CKG with Fast Page Mode 8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM53280 1 00CK is a 8Mx32bits RAM high density Dynamic , Part Identification

a512K

Abstract: KMM532512CV
Contextual Info: SAMSUNG ELECTRONICS INC b7E 1> • 7 ^ 4 1 4 2 001S04b b42 I SMGK KM M532512CV/CVG DRAM MODULES 5 1 2K x 3 2 DRAM SIM M Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tflAC • • • • • • • tcAc tflC KMM532512CV-6 60ns 15ns 110ns

Contextual Info: KMM5328100V/VG/VP DRAM MODULES 8 M x 3 2 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: tR A C KMM5328100V-6 60ns 15ns 110ns KMM5328100V-7 70ns 20ns 130ns KMM5328100V-8 80ns 20ns 150ns The KMM5328100V is a S ingle in-line M em ory M odule

24w04

Abstract: KMM5322100BK
Contextual Info: DRAM MODULE KMM53221OOBKU/BKUG KMM53221 OOBKU/BKUG Fast Page Mode 2Mx32 DRAM SIMM, 5V, 2K Refresh, using 2Mx8 DRAM G EN ERA L DESCRIPTIO N FEATURES • Part Identification The Samsung KMM5322100BKU is a 2M bit x 32 Dynamic RAM high density memory module. The

Contextual Info: DRAM MODULE KMM5322104CKU/CKUG KMM5322104CKU/CKUG Fast Page Mode with Extended Data Out 2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM5322104CKU is a 2Mx32bits RAM high density memory module. The Dynamic Part Identification

KM44C4104bk

Contextual Info: KMM5328004B K/B KG KMM5328104BK/BKG DRAM MODULE KMM5328004BK/BKG & KMM5328104BK/BKG Fast page with EDO Mode 8Mx32 DRAM SIMM, 4K & 2K Refresh, 5V G EN ERA L D ESCRIPTIO N The Samsung KMM53280 1 04BK is a 8M bit x 32 FEATURES • Part Identification Dynamic RAM high density memory module. The

KMM53216004BK

Abstract: KMM53216004BKG
Contextual Info: DRAM MODULE KMM53216004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

KMM53232004BK

Abstract: KMM53232004BKG km44c16104bk
Contextual Info: DRAM MODULE KMM53232004BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

KMM53232000BK

Abstract: KMM53232000BKG
Contextual Info: DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 Sept. 1997 • Removed two AC parameters tCACP(access time from CAS) and tAAP(access time from col. addr.) in AC CHARACTERISTICS. Version 0.1 (June 1998) • The 3rd. generation of 64M DRAM components are applied for this module.

KMM5321200C2W

Abstract: KMM5321200C2WG
Contextual Info: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE