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    CISS 3010 Search Results

    CISS 3010 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    PTH03010WAS
    		Texas Instruments 15 A, 3.3-V Input Non-Isolated Wide-Output Adjust Power Module 10-Surface Mount Module -40 to 85 Visit Texas Instruments Buy
    SN74TVC3010PWR
    		Texas Instruments 10-Bit Voltage Clamp 24-TSSOP -40 to 85 Visit Texas Instruments Buy
    M38510/30103BFA
    		Texas Instruments Dual J-K Negative-Edge-Triggered Flip-Flops With Preset And Clear 16-CFP -55 to 125 Visit Texas Instruments Buy
    M38510/30102SCA
    		Texas Instruments Dual D-type Positive-Edge-Triggered Flip-Flops With Preset And Clear 14-CDIP -55 to 125 Visit Texas Instruments Buy
    M38510/30102BDA
    		Texas Instruments Dual D-type Positive-Edge-Triggered Flip-Flops With Preset And Clear 14-CFP -55 to 125 Visit Texas Instruments Buy

    CISS 3010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    CI-4010

    Abstract: CISS 3010 50 Hz notch filter ldr used in light sensitive alarm motion DETECTOR CIRCUIT using LDR dark light sensor using LDR AND transistor LIGHT ALARM CIRCUIT WITH LDR motion DETECTOR CIRCUIT DIAGRAM dual bright 3mm LDR simple circuit design of ldr sensor
    Contextual Info:  CISS Motion Detector MOTION DETECTOR CI-3010 Information Brochure ➫ CI-3010 Motion Detector IC ➫ CI-3010 Application Notes ➫ CI-3010 Motion Detector Set → PIR Sensor → Fresnel Lens → LDR ➫ CI-3010 Demonstration Board 1.0 27. August 1997 Creations In Silicon & Software


    Original     		CI-3010 CI-3010 CI-4010 CISS 3010 50 Hz notch filter ldr used in light sensitive alarm motion DETECTOR CIRCUIT using LDR dark light sensor using LDR AND transistor LIGHT ALARM CIRCUIT WITH LDR motion DETECTOR CIRCUIT DIAGRAM dual bright 3mm LDR simple circuit design of ldr sensor PDF

    APT*1002R4BN

    Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
    Contextual Info: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0


    OCR Scan     		O-247 APT1001RBN APT1001R1BN APT1001RBNR APT1001R1BNR APT1001R3BN APT1001R6BN APT1002RBN APT1002R4BN APT1002RBNR APT*1002R4BN APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF PDF

    2SJ583LS

    Abstract: TO-220FI-LS
    Contextual Info: 注文コード No. N 6 4 0 9 2SJ583LS No. N 6 4 0 9 30100 新 2SJ583LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		2SJ583LS IT01493 IT01491 --100V IT01494 --10V IT01496 IT01495 2SJ583LS TO-220FI-LS PDF

    J584

    Abstract: IT01500 2SJ584LS
    Contextual Info: 注文コード No. N 6 4 1 0 2SJ584LS No. N 6 4 1 0 30100 新 2SJ584LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		2SJ584LS IT01505 --100V IT01503 --10V IT01506 IT01508 IT01507 J584 IT01500 2SJ584LS PDF

    2SJ585LS

    Abstract: 2SJ585 TA-2756 TO-220FI
    Contextual Info: 注文コード No. N 6 4 1 2 2SJ585LS No. N 6 4 1 2 30100 新 2SJ585LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。


    Original     		2SJ585LS IT01517 IT01515 --100V --10V IT01518 IT01520 IT01519 2SJ585LS 2SJ585 TA-2756 TO-220FI PDF

    TA-2770

    Abstract: 2SJ416 FX856 53723
    Contextual Info: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード


    Original     		FX856 FX856 2SJ416 SB07-03P 750mm2 IT01339 IT01337 IT01341 IT01342 TA-2770 2SJ416 53723 PDF

    n-channel dual 3010

    Abstract: CISS 3010 SL-30101 SL-3010 SL-30102 SL3010 j177 equivalent transistor
    Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-3010 SL-3010 SL-30102 SL-30101 n-channel dual 3010 CISS 3010 SL-30101 SL-30102 SL3010 j177 equivalent transistor PDF

    3010 MOS

    Abstract: j177 equivalent transistor
    Contextual Info: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power


    Original     		SL-3010 SL-3010 SL-30101 SL-30102 SL-30102 3010 MOS j177 equivalent transistor PDF

    CPH5603

    Abstract: sanyo 2168
    Contextual Info: Ordering number:ENN6388 P-Channel Silicon MOSFET CPH5603 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5603] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a


    Original     		ENN6388 CPH5603 CPH5603] CPH5603 sanyo 2168 PDF

    FTS1003

    Abstract: TA212
    Contextual Info: Ordering number:ENN6154A P-Channel Silicon MOSFET FTS1003 Load Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS1003] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain 2 : Source


    Original     		ENN6154A FTS1003 FTS1003] FTS1003 TA212 PDF

    2SK3021

    Contextual Info: Ordering number:ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · 4V drive. unit:mm 2083B [2SK3021] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate


    Original     		ENN6230 2SK3021 2083B 2SK3021] 2092B 2SK3021 PDF

    marking ku

    Abstract: 2SK3121
    Contextual Info: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		ENN6104A 2SK3121 2SK3121] 25max marking ku 2SK3121 PDF

    CPH3306

    Abstract: TA-2307
    Contextual Info: Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05


    Original     		EN6438 CPH3306 CPH3306] 900mm2 CPH3306 TA-2307 PDF

    TA306

    Abstract: CPH3413
    Contextual Info: Ordering number : ENN6924 CPH3413 N-Channel Silicon MOSFET CPH3413 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3413] 2.9 0.15 0.4 0.6 3 0.2 • 2 1


    Original     		ENN6924 CPH3413 CPH3413] TA306 CPH3413 PDF

    2062A

    Abstract: 2SK3122 DS-17 SANYO
    Contextual Info: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5


    Original     		ENN6105A 2SK3122 2SK3122] 25max 2062A 2SK3122 DS-17 SANYO PDF

    DS-17 SANYO

    Abstract: 2SK3122 marking KW
    Contextual Info: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5


    Original     		ENN6105A 2SK3122 2SK3122] 25max DS-17 SANYO 2SK3122 marking KW PDF

    2SK3120

    Contextual Info: Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3120] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5


    Original     		ENN6103A 2SK3120 2SK3120] 25max 2SK3120 PDF

    2SK3119

    Abstract: TA2494
    Contextual Info: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		ENN6098A 2SK3119 2SK3119] 25max 2SK3119 TA2494 PDF

    TA-2307

    Abstract: CPH3306
    Contextual Info: Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05


    Original     		EN6438 CPH3306 CPH3306] 900mm2 TA-2307 CPH3306 PDF

    MARKING KU

    Abstract: 2SK3121
    Contextual Info: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		ENN6104A 2SK3121 2SK3121] 25max MARKING KU 2SK3121 PDF

    2SK3119

    Abstract: TA2494
    Contextual Info: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max


    Original     		ENN6098A 2SK3119 2SK3119] 25max 2SK3119 TA2494 PDF

    FTS2004

    Abstract: S2004
    Contextual Info: Ordering number:ENN5949A N-Channel Silicon MOSFET FTS2004 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS2004] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain


    Original     		ENN5949A FTS2004 FTS2004] FTS2004 S2004 PDF

    S2004

    Abstract: FTS2004
    Contextual Info: Ordering number : ENN5949A SANYO Semiconductors DATA SHEET FTS2004 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. · 4V drive. · Mounting height 1.1mm. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter


    Original     		ENN5949A FTS2004 1000mm2 S2004 FTS2004 PDF

    CPH5601

    Contextual Info: Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a


    Original     		ENN6439 CPH5601 CPH5601] CPH5601 PDF