CI-4010
Abstract: CISS 3010 50 Hz notch filter ldr used in light sensitive alarm motion DETECTOR CIRCUIT using LDR dark light sensor using LDR AND transistor LIGHT ALARM CIRCUIT WITH LDR motion DETECTOR CIRCUIT DIAGRAM dual bright 3mm LDR simple circuit design of ldr sensor
Text: CISS Motion Detector MOTION DETECTOR CI-3010 Information Brochure ➫ CI-3010 Motion Detector IC ➫ CI-3010 Application Notes ➫ CI-3010 Motion Detector Set → PIR Sensor → Fresnel Lens → LDR ➫ CI-3010 Demonstration Board 1.0 27. August 1997 Creations In Silicon & Software
|
Original
|
PDF
|
CI-3010
CI-3010
CI-4010
CISS 3010
50 Hz notch filter
ldr used in light sensitive alarm
motion DETECTOR CIRCUIT using LDR
dark light sensor using LDR AND transistor
LIGHT ALARM CIRCUIT WITH LDR
motion DETECTOR CIRCUIT DIAGRAM dual bright
3mm LDR
simple circuit design of ldr sensor
|
2SJ583LS
Abstract: TO-220FI-LS
Text: 注文コード No. N 6 4 0 9 2SJ583LS No. N 6 4 0 9 30100 新 2SJ583LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。
|
Original
|
PDF
|
2SJ583LS
IT01493
IT01491
--100V
IT01494
--10V
IT01496
IT01495
2SJ583LS
TO-220FI-LS
|
J584
Abstract: IT01500 2SJ584LS
Text: 注文コード No. N 6 4 1 0 2SJ584LS No. N 6 4 1 0 30100 新 2SJ584LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。
|
Original
|
PDF
|
2SJ584LS
IT01505
--100V
IT01503
--10V
IT01506
IT01508
IT01507
J584
IT01500
2SJ584LS
|
2SJ585LS
Abstract: 2SJ585 TA-2756 TO-220FI
Text: 注文コード No. N 6 4 1 2 2SJ585LS No. N 6 4 1 2 30100 新 2SJ585LS 特長 P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗。 ・超高速スイッチング。 ・マイカレスパッケージで取り付け作業性が良い。
|
Original
|
PDF
|
2SJ585LS
IT01517
IT01515
--100V
--10V
IT01518
IT01520
IT01519
2SJ585LS
2SJ585
TA-2756
TO-220FI
|
TA-2770
Abstract: 2SJ416 FX856 53723
Text: 注文コード No. N 5 3 7 2 A FX856 No. N 5 3 7 2 A 30100 新 開発速報 No. ※ 5372 とさしかえてください。 FX856 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード
|
Original
|
PDF
|
FX856
FX856
2SJ416
SB07-03P
750mm2
IT01339
IT01337
IT01341
IT01342
TA-2770
2SJ416
53723
|
n-channel dual 3010
Abstract: CISS 3010 SL-30101 SL-3010 SL-30102 SL3010 j177 equivalent transistor
Text: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
PDF
|
SL-3010
SL-3010
SL-30102
SL-30101
n-channel dual 3010
CISS 3010
SL-30101
SL-30102
SL3010
j177 equivalent transistor
|
3010 MOS
Abstract: j177 equivalent transistor
Text: Advance Data Sheet Product Description SL-3010 The SL-3010 is Stanford Microdevices’ high-linearity 30W LDMOS transistor designed for base station applications at or near 1000 MHz. Rated for minimum output power of 30W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-Carrier Power
|
Original
|
PDF
|
SL-3010
SL-3010
SL-30101
SL-30102
SL-30102
3010 MOS
j177 equivalent transistor
|
CPH5603
Abstract: sanyo 2168
Text: Ordering number:ENN6388 P-Channel Silicon MOSFET CPH5603 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5603] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. · Composite type with 2 MOSFETs contained in a
|
Original
|
PDF
|
ENN6388
CPH5603
CPH5603]
CPH5603
sanyo 2168
|
FTS1003
Abstract: TA212
Text: Ordering number:ENN6154A P-Channel Silicon MOSFET FTS1003 Load Switching Applications Features Package Dimensions • Low ON resistance. · 2.5V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS1003] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain 2 : Source
|
Original
|
PDF
|
ENN6154A
FTS1003
FTS1003]
FTS1003
TA212
|
2SK3021
Abstract: No abstract text available
Text: Ordering number:ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. · 4V drive. unit:mm 2083B [2SK3021] 2.3 0.5 7.0 5.5 1.5 6.5 5.0 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3 1 : Gate
|
Original
|
PDF
|
ENN6230
2SK3021
2083B
2SK3021]
2092B
2SK3021
|
marking ku
Abstract: 2SK3121
Text: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
PDF
|
ENN6104A
2SK3121
2SK3121]
25max
marking ku
2SK3121
|
CPH3306
Abstract: TA-2307
Text: Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
|
Original
|
PDF
|
EN6438
CPH3306
CPH3306]
900mm2
CPH3306
TA-2307
|
TA306
Abstract: CPH3413
Text: Ordering number : ENN6924 CPH3413 N-Channel Silicon MOSFET CPH3413 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. unit : mm 2152A [CPH3413] 2.9 0.15 0.4 0.6 3 0.2 • 2 1
|
Original
|
PDF
|
ENN6924
CPH3413
CPH3413]
TA306
CPH3413
|
2SK3120
Abstract: No abstract text available
Text: Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3120] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
|
Original
|
PDF
|
ENN6103A
2SK3120
2SK3120]
25max
2SK3120
|
|
|
DS-17 SANYO
Abstract: 2SK3122 marking KW
Text: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
|
Original
|
PDF
|
ENN6105A
2SK3122
2SK3122]
25max
DS-17 SANYO
2SK3122
marking KW
|
2SK3120
Abstract: No abstract text available
Text: Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3120] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
|
Original
|
PDF
|
ENN6103A
2SK3120
2SK3120]
25max
2SK3120
|
2SK3119
Abstract: TA2494
Text: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
PDF
|
ENN6098A
2SK3119
2SK3119]
25max
2SK3119
TA2494
|
TA-2307
Abstract: CPH3306
Text: Ordering number:EN6438 P-Channel Silicon MOSFET CPH3306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2152A [CPH3306] 2.9 0.6 0.2 0.15 0.4 3 2 1 2.8 0.6 1.6 0.05
|
Original
|
PDF
|
EN6438
CPH3306
CPH3306]
900mm2
TA-2307
CPH3306
|
MARKING KU
Abstract: 2SK3121
Text: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
PDF
|
ENN6104A
2SK3121
2SK3121]
25max
MARKING KU
2SK3121
|
2SK3119
Abstract: TA2494
Text: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
|
Original
|
PDF
|
ENN6098A
2SK3119
2SK3119]
25max
2SK3119
TA2494
|
FTS2004
Abstract: S2004
Text: Ordering number:ENN5949A N-Channel Silicon MOSFET FTS2004 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · 4V drive. · Mounting height 1.1mm. unit:mm 2147A [FTS2004] 0.65 5 4 Specifications 0.25 0.95 1 1 : Drain
|
Original
|
PDF
|
ENN5949A
FTS2004
FTS2004]
FTS2004
S2004
|
S2004
Abstract: FTS2004
Text: Ordering number : ENN5949A SANYO Semiconductors DATA SHEET FTS2004 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON resistance. · 4V drive. · Mounting height 1.1mm. Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter
|
Original
|
PDF
|
ENN5949A
FTS2004
1000mm2
S2004
FTS2004
|
CPH5601
Abstract: No abstract text available
Text: Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a
|
Original
|
PDF
|
ENN6439
CPH5601
CPH5601]
CPH5601
|
APT*1002R4BN
Abstract: APT5040BNF FREDFET APT802R4BN APT5020BNR APT5085BN APT5020BNF APT5025BN APT6040BNR APT5085BNF
Text: APT TO-247 PACKAGE MOSFET/FREDFET PRODUCTS BV OSS r ds ° n lD(Cont.) PD Ciss(pF) Qg(nC) APT New Product Package Volts Ohms Amps Watts Typ Typ Part No. Comments Style 1.000 1.100 1.000 1.100 1.300 1.600 2.000 2.400 2.000 2.400 4.000 4.200 4.000 4.200 11.0
|
OCR Scan
|
PDF
|
O-247
APT1001RBN
APT1001R1BN
APT1001RBNR
APT1001R1BNR
APT1001R3BN
APT1001R6BN
APT1002RBN
APT1002R4BN
APT1002RBNR
APT*1002R4BN
APT5040BNF
FREDFET
APT802R4BN
APT5020BNR
APT5085BN
APT5020BNF
APT5025BN
APT6040BNR
APT5085BNF
|
