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    CJ SOT23 Search Results

    CJ SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    ISL54103IHZ-T7A Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    EL6204CWZ-T7A Renesas Electronics Corporation Laser Driver Oscillator, SOT23, /Reel Visit Renesas Electronics Corporation
    ISL54103IHZ-T7 Renesas Electronics Corporation DDC Accelerator (DDCA), SOT23, /Reel Visit Renesas Electronics Corporation
    ISL21070CIH320Z-TK Renesas Electronics Corporation 25µA Micropower Voltage References, SOT23, /Reel Visit Renesas Electronics Corporation

    CJ SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MV SOT23

    Abstract: partmarking 6 Cc PARTMARKING at BSS80B BSS80C DSA003681
    Text: SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL — BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage


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    PDF BSS80B BSS80C BSS80B BSS80C 150oC -150mA -10mA MV SOT23 partmarking 6 Cc PARTMARKING at DSA003681

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    Abstract: No abstract text available
    Text: PART OBSOLETE SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 95 ✪ BSS80B BSS80C PARTMARKING DETAIL — BSS80B - CH BSS80C - CJ C E B SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage


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    PDF BSS80B BSS80C BSS80C -10mA -10mA

    mbrf1060ctl

    Abstract: No abstract text available
    Text: Schottky Rectifiers Peak Inverse Voltage VRWM Max. Average Forward Current (Io) Max. Reverse Leakage Current (IR) Max. Forward Voltage Drop (VF) Max. Junction Capacitance (Cj) (A) Max. Forward Surge Current (IFSM) (A) (V) 30 (mA) (V) (pF) 0.2 4 0.0005 1


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    PDF OD-123 BAT54W OT-323 BAT54WS BAT54A OT-23 BAT54C BAT54S mbrf1060ctl

    Untitled

    Abstract: No abstract text available
    Text: TM Micro Commercial Components ESD PROTECTION DEVICES MCC Part Number Reverse Standoff Voltage Breakdown Voltage Min@IT Peak Power Dissipation Maximum Peak Pulse Current Maximum Reverse Leakage Maximum Clamping Voltage MAX Cj@VR=0V,f=1 MHZ VRWM V VBR (V)


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    PDF MLESD08A-2510 MLESD12A-0402 MLESD24B-0603

    Untitled

    Abstract: No abstract text available
    Text: 1.3 @ 50mA 0.02 @ 18V 5 NUMBER OF LINES LEAKAGE CURRENT - µA @ VRRM 12.0 CAPACITANCE CJ - pF FORWARD VOLTAGE VF @ IF 20.0 FORWARD PEAK PULSE CURRENT - A DALC112S1 REPETITIVE PEAK REV. VOLT. - VRRM PART NUMBER STEERING DIODES PIN CONFIGURATION 6 SO-8 ET108


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    PDF DALC112S1 ET108 ET720 SO-16 ET721 ET723 ET724 OT-23-6 PMMAD1109 SO-14

    tlo82

    Abstract: TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842
    Text: Worldwide Sales Offices Linear/Mixed-Signal Designer’s Guide Winter 2002 FRANCE ITALY PRC SWEDEN National Semicondutores da América do Sul Ltda. World Trade Center Av. das Nações Unidas, 12.551 22nd Floor - cj. 2207 04578-903 Brooklyn São Paulo, SP Brasil


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    PDF I-20089 tlo82 TLO82 datasheet lm147 lm117 3.3V JM38510/10901BGA TLO82 application lm723 LM338 model SPICE LM723 pin details lm842

    MARKING 720 SOT23

    Abstract: 1n914 surface mount diode 720 SOT23
    Text: MCC SWITCHING DIODES OPERATING/STORAGE TEMPERATURE RANGE: -55°C TO 125°C Peak MCC Reverse Maximum Reverse Maximum Forward Part Number Voltage Voltage Drop Current Current @ 25°C PRV V V mA Junction Capacitance VR =4.0V, f=1MHz Cj Max. pF 1.00 1.00 1.00


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    PDF 500mW DO-35 1N914 1N914A 1N914B DL914 350mW OT-23 MMBD914 MARKING 720 SOT23 1n914 surface mount diode 720 SOT23

    diode tvs

    Abstract: br sot-143
    Text: 100.0 25 8 POWER @ 8/20µs - WATTS LEAKAGE CURRENT - µA @ VWM 20.0 NUMBER OF LINES CURRENT IPP @8/20µs - A 6.8 CAPACITANCE CJ SD - pF CLAMPING VOLTAGE - VC @ IPP 6.0 MIN. BREAKDOWN VOLTAGE – V(BR) PLC03-6 STAND-OFF VOLTAGE - VWM PART NUMBER STEERING DIODE/TVS COMBO


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    PDF PLC03-6 PSR05 OT-143 PSRDA05-4 PSRDA12-4 PSRDA15-4 PSRDA05-6 OT-143 SRV05-4 diode tvs br sot-143

    SRV05-4LC

    Abstract: srv05
    Text: 05305 SRV05-4LC Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4LC is a high-powered, ultra low capacitance device for dual USB port and power bus protection. The SRV05-4LC is rated for 5.0V applications, with 500 Watts peak pulse power per line 8/20µs and an ultra low capacitance of 0.7pF (CJ(SD). The SRV05-4LC is ideally suited for surge suppression and ESD protection of high-speed data


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    PDF SRV05-4LC SRV05-4LC srv05

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    Abstract: No abstract text available
    Text: 05305 SRV05-4LC Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4LC is a high-powered, ultra low capacitance device for dual USB port and power bus protection. The SRV05-4LC is rated for 5.0V applications, with 500 Watts peak pulse power per line 8/20µs and an ultra low capacitance of 0.7pF (CJ(SD). The SRV05-4LC is ideally suited for surge suppression and ESD protection of high-speed data


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    PDF SRV05-4LC SRV05-4LC

    Untitled

    Abstract: No abstract text available
    Text: 05305 SRV05-4LC Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4LC is a high-powered, ultra low capacitance device for dual USB port and power bus protection. The SRV05-4LC is rated for 5.0V applications, with 500 Watts peak pulse power per line 8/20µs and an ultra low capacitance of 0.7pF (CJ(SD). The SRV05-4LC is ideally suited for surge suppression and ESD protection of high-speed data


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    PDF SRV05-4LC SRV05-4LC

    Untitled

    Abstract: No abstract text available
    Text: 05305 SRV05-4LC Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4LC is a high-powered, ultra low capacitance device for dual USB port and power bus protection. The SRV05-4LC is rated for 5.0V applications, with 500 Watts peak pulse power per line 8/20µs and an ultra low capacitance of 0.7pF (CJ(SD). The SRV05-4LC is ideally suited for surge suppression and ESD protection of high-speed data


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    PDF SRV05-4LC SRV05-4LC

    Untitled

    Abstract: No abstract text available
    Text: 05305 SRV05-4LC Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4LC is a high-powered, ultra low capacitance device for dual USB port and power bus protection. The SRV05-4LC is rated for 5.0V applications, with 500 Watts peak pulse power per line 8/20µs and an ultra low capacitance of 0.7pF (CJ(SD). The SRV05-4LC is ideally suited for surge suppression and ESD protection of high-speed data


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    PDF SRV05-4LC SRV05-4LC sot-23-6

    SRV05-4LC

    Abstract: No abstract text available
    Text: 05305 SRV05-4LC Only One Name Means ProTek’Tion ultra low capacitance steering diode/tvs array Description The SRV05-4LC is a high-powered, ultra low capacitance device for dual USB port and power bus protection. The SRV05-4LC is rated for 5.0V applications, with 500 Watts peak pulse power per line 8/20µs and an ultra low capacitance of 0.7pF (CJ(SD). The SRV05-4LC is ideally suited for surge suppression and ESD protection of high-speed data


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    PDF SRV05-4LC SRV05-4LC sot-23-6

    Untitled

    Abstract: No abstract text available
    Text: TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family


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    PDF DH71000 applicati51 DH71010-53 DH71016-53 DH71020-53 DH71030-53 DH71045-53 DH71067-53 DH71100-53 DH71010-54

    DH71000

    Abstract: varactor diode capacitance range varactor DH71010 DH71030-70 tuning varactor
    Text: TUNING VARACTOR Plastic package Surface Mount Silicon abrupt tuning varactor SOT23 SURFACE MOUNT SILICON ABRUPT TUNING VARACTOR Description This series of silicon tuning varactors have an epitaxial mesa design with a high temperature passivation. This technology is used to produce abrupt tuning varactor in SOT23 package. This family


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    PDF DH71000 inclu0-60 DH71030-60 DH71045-60 DH71067-60 DH71100-60 DH71010-51 DH71016-51 DH71020-51 DH71030-51 varactor diode capacitance range varactor DH71010 DH71030-70 tuning varactor

    L30ESD24VC3-2

    Abstract: No abstract text available
    Text: LITE-ON SEMICONDUCTOR DUAL ESD PROTECTION DIODES L30ESDxVC3-2 STAND-OFF VOLTAGE - 5~24 Volts POWER DISSIPATION - 300 WATTS GENERAL DESCRIPTION SOT23 The L30ESD5V0C3-2~L30ESD24VC3-2 are a dual voltage suppressor designed to protect components which are connected to


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    PDF L30ESDxVC3-2 L30ESD5V0C3-2 L30ESD24VC3-2 L30ESD5V0C3-2 L30ESD12VC3-2 L30ESD24VC3-2

    SIEMENS BB409

    Abstract: bb409
    Text: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/


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    PDF fi23SbOS BB419 OD-123 BB409 BB439 OD-323 BB512 BB515 SIEMENS BB409 bb409

    Untitled

    Abstract: No abstract text available
    Text: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS ISSU E 2 - SEPTEM BER 95 Q_ PARTMARKING DETAIL — BSS80B - CH B S S8 0 C - CJ ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE Collector-Base Voltage Collector-Emitter Voltage V CBO V CEO


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    PDF BSS80B BSS80C BSS80C -10mA -150mA 150mA

    BCW29

    Abstract: BCW30 IEC134 "transistors "
    Text: ^ 5 3 ^ 3 1 DQlSb53 1 BCW29 BCW30 DbE D N AMER PHILIPS/DISCRETE T - ' X ci - \ cj SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistors, in a microminiature plastic envelope, intended for low level general purpose appli­ cations in thick and thin-film circuits.


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    PDF 0Q15bE3 BCW29 BCW30 BCW30 IEC134 "transistors "

    Untitled

    Abstract: No abstract text available
    Text: S A M S UN G SEMICONDUCTOR INC MPS6562 m g q J 7 cj t . 4 m 2 QQ07330 1 PNP EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR • Collector-Emltter Voltage: Vc*0 =25V • Collector Dissipation: Pc max =625mW • Complement to MPS6560 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    PDF MPS6562 QQ07330 T-29-21 625mW MPS6560

    Untitled

    Abstract: No abstract text available
    Text: BSS80B BSS80C SOT23 PNP SILICON PLANAR SWITCHING TRANSISTORS PARTMARKING DETAILS BSS80B - CH BSS80C - CJ ABSOLUTE M A X IM U M RATINGS P A R A M E TE R SYMBOL C ollector-B ase V o lta g e V CBO -6 0 V C o llec to r-E m itte r V o ltag e V CEO -4 0 V E m itter-B ase V o ltag e


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    PDF BSS80B BSS80C BSS80B BSS80C 300jiS.

    SMPN7316

    Abstract: DIODE Z0 031
    Text: met SURFACE M O U N T SOT23 SMPN SERIES PIN DIODES FOR RF SW ITC H IN G A N D ATTENUATING CORPOI FEATURES Surface Mount Package Tape anc! Reel A vailable Reliability G old M etallized Chip Silicon Nitride/Glass Passivation Low Series Resistance Low Capacitance


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    PDF OT-23 SMPN7316 DIODE Z0 031

    Untitled

    Abstract: No abstract text available
    Text: iH SURFACE MOUNT SOT23 SMPN SERIES PIN DIODES FOR RF SW ITCHING AN D ATTENUATING ^=1 metelics CORPORATION FEATURES Surface Mount Package Tape a n d Reel A v a ila b le Reliability G o ld M e ta lliz e d C h ip Silicon N itride/G lass Passivation Low Series Resistance


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    PDF OT-23 LGS13SE