CJE MARKING DIODE Search Results

Contextual Info: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low

CJE marking diode

Abstract: Zener diode sod123 marking code 14 CJD marking diode CMHZ4104 MARKING CODE ckh Zener diode 183 CMHZ4099 CMHZ4100 CMHZ4102 CMHZ4105
Contextual Info: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low

"Marking Code 183" Zener diode

Abstract: CJD marking diode marking CJD Zener diode 183 marking ckf CJE marking diode Low Noise Zener Diode Zener diode sod123 marking code 14 marking 297 CMHZ4104
Contextual Info: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low

Contextual Info: CMHZ4099 THRU CMHZ4125 SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed

Zener diode 183

Abstract: CMHZ4104 CJE marking diode marking CKF CMHZ4099 CMHZ4100 CMHZ4101 CMHZ4102 CMHZ4103 CMHZ4106
Contextual Info: CMHZ4099 THRU CMHZ4125 SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed

marking 222 zener diode

Abstract: Zener Diode LF marking marking FZM t-75 hv diode Zener diode 183 zener diode marking 222 zener diode marking ZT CJD marking diode marking CJD T-75 A HIGH VOLTAGE DIODES
Contextual Info: Central" CMHZ4099 THRU CMHZ4125 Sem iconductor Corp. SURFACE MOUNT LOW NOISE SILICON ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low

marking CJD

Abstract: Zener Diode LF marking MARKING CODE N0 CJE marking diode CMHZ4104
Contextual Info: Central CMHZ4099 THRU CMHZ4125 Semiconductor Corp. LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low

Low Noise Zener Diode

Abstract: Zener diode 183 marking CKF 5 volts ZENER DIODE marking CJD CMHZ4104 CMHZ4099 CMHZ4100 CJE marking diode CMHZ4102
Contextual Info: Central CMHZ4099 THRU CMHZ4125 TM Semiconductor Corp. LOW NOISE ZENER DIODE 6.8 VOLTS THRU 47 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ4099 Series types are high quality Silicon Zener Diodes designed for low leakage, low current and low

Contextual Info: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

ex marking code diodes

Abstract: SOT23 DIODE marking CODE Data BAV99 bav99 Date Code BAV99_Q
Contextual Info: BAV99 DUAL SURFACE MOUNT SWITCHING DIODE Features Mechanical Data • • • • • • • • Fast Switching Speed Surface Mount Package Ideally Suited for Automated Insertion For General Purpose Switching Applications Totally Lead-Free & Fully RoHS Compliant Notes 1 & 2

transistor marking BMs

Abstract: siemens rs 806 siemens transistor BGA427 BMS 13-81
Contextual Info: SIEMENS BGA 427 Si-MMIC-Amplifier in SIEG ET 25-Technologie Preliminary data • Cascadable 50 Q-gain block • Unconditionally stable • Gain IS2 1 12 = 18,5 dB at 1.8 GHz appl.1 gain |Sgi |2 = 22 dB at 1.8 GHz (appl.2) IP3out = +7 dBm at 1.8 GHz (Vb=3V, /d=9.4itiA)

TRANSISTOR MARKING YB

Abstract: BFP405F marking al
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

TRANSISTOR MARKING FA

Abstract: EHA07307 CJE marking diode
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

marking ams

Abstract: TRANSISTOR MARKING YB BFP420F EHA07307 transistor bI 240 nh TRANSISTOR DEC07
Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

TRANSISTOR MARKING YB

Abstract: TSFP-4 BFP405F CJE marking diode
Contextual Info: SIEGET
25 BFP405F NPN Silicon RF Transistor XYs Preliminary data
For low current applications
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.25 dB at 1.8 GHz 4 outstanding G ms = 23 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

BFP405F

Abstract: BFP420F
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

7661 infineon

Abstract: BFP420F
Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability

Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP405F

Abstract: BFP420F TSFP-4
Contextual Info: BFP405F NPN Silicon RF Transistor* • For low current applications 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.25 dB at 1.8 GHz outstanding Gms = 23 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

BFP420F

Contextual Info: BFP420F NPN Silicon RF Transistor* • For high gain low noise amplifiers 3 • Smallest Package 1.4 x 0.8 x 0.59 mm 2 4 1 • Noise figure F = 1.1 dB at 1.8 GHz outstanding Gms = 20 dB at 1.8 GHz • Transition frequency f T = 25 GHz • Gold metallization for high reliability

Contextual Info: S IE M E N S Si-MMIC-Amplifier BGA420 in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 n-G ain Block Unconditionally stable Gain |s 21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz Vd=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

a03 dbm

Abstract: marking code 8Ff 661 a03 mmic a03 marking A03 BGA420 GPS05605 Q62702-G0057
Contextual Info: SIEM ENS BGA420 S i-M M IC -A m p lifier in SIEGET 25-Technology Preliminary Data # # # # # # Cascadable 50 £2-Gain Block Unconditionally stable Gain |s21|2=13 dB at 1.8 GHz IP3out = +9 dBm at 1.8 GHz V d=3V, lD=typ. 6.7mA Noise Figure NF= 2.2 dB at 1.8 GHz

Contextual Info: SIEGET
25 BFP420F NPN Silicon RF Transistor XYs Preliminary data
For high gain low noise amplifiers
Smallest Package 1.4 x 0.8 x 0.59mm 3
Noise figure F = 1.1 dB at 1.8 GHz 4 outstanding G ma = 20 dB at 1.8 GHz
Transition frequency f T = 25 GHz
Gold metallization for high reliability