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Contextual Info: Philips Semiconductors General Handling MOS devices ELECTROSTATIC CHARGES RECEIPT AND STORAGE Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, |
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Contextual Info: Philips Semiconductors Handling precautions 1 General ELECTROSTATIC CHARGES 3 Electrostatic charges can be stored in many things; for example, man-made fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, sheets of paper stored in plastic envelopes, paper from |
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Contextual Info: Philips Semiconductors General Handling MOS devices contents are sensitive to electrostatic discharge is shown by warning labels on both primary and secondary packing. ELECTROSTATIC CHARGES Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing |
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Contextual Info: Philips Semiconductors RF Wideband Transistors General section ELECTROSTATIC CHARGES RECEIPT AND STORAGE Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, |
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Contextual Info: Philips Semiconductors General Handling MOS devices ELECTROSTATIC CHARGES contents are sensitive to electrostatic discharge is shown by warning labels on both primary and secondary packing. Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing |
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Contextual Info: 3M Topical Antistatic Spray ANTISTAT1QT Antistat Spray Topical antistat can be applied to virtually any surface to reduce static charging. Safe and easy-to-use, this clear liquid can be sprayed or wiped onto worksurfaces, walls, mats, floors, carpets, conveyor belts, clothing or other materials. |
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MIL-HDBK-263. 450oF 1155-b | |
EIA-583
Abstract: CECC 00802
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boiler chemicalsContextual Info: Issued March 1997 232-3131 Data Pack G Protective clothing Data Sheet A range of cost effective, disposable clothing manufactured from TYVEK , a non woven material comprising heat and pressure bonded polyethylene fibres. This lightweight clothing is resistant to chemical penetration |
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DOD Handbook 263
Abstract: 3N01 A143 handling damage 190B
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DOD-HDBK-263) A143-3N-01 DOD Handbook 263 3N01 A143 handling damage 190B | |
cwi 1011
Abstract: 0910037 L5106 4mm banana plug socket B8170 IC 555 conductivity meter velcro straps J5260F Earth connection strip M5 screws working of light sensitive alarm with timer 555
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element-14 508MM 030-0005F 178MM O-220 cwi 1011 0910037 L5106 4mm banana plug socket B8170 IC 555 conductivity meter velcro straps J5260F Earth connection strip M5 screws working of light sensitive alarm with timer 555 | |
Contextual Info: Philips Semiconductors General ELECTROSTATIC CHARGES Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, sheets of paper stored in plastic envelopes, paper from |
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Contextual Info: Philips Semiconductors General Handling MOS devices ELECTROSTATIC CHARGES Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, sheets of paper stored in plastic envelopes, paper from |
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FTMS-101C
Abstract: clothing
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TB-3036 TB-3036 FTMS-101C clothing | |
Contextual Info: Philips Sem iconductors General ELECTROSTATIC CHARGES Electrostatic charges can exist in m any things; for example, m an-m ade-fibre clothing, m oving machinery, objects with air blowing across them, plastic storage bins, sheets of paper stored in plastic envelopes, paper from |
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Contextual Info: Philips Semiconductors General Handling MOS devices ELECTROSTATIC CHARGES contents are sensitive to electrostatic discharge is shown by warning labels on both primary and secondary packing. Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing |
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F1959
Abstract: Ferraz Shawmut IEEE1584 ieee electrical engineering projects arcflash E5404 1307C
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NFPA70E IEEE1584 F1959/F1959M-06a F1959 Ferraz Shawmut ieee electrical engineering projects arcflash E5404 1307C | |
Contextual Info: Philips Sem iconductors General ELECTROSTATIC CHARGES Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, sheets of paper stored in plastic envelopes, paper from |
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Contextual Info: Philips Semiconductors Product specification Small-signal Field-effect Transistors General section ELECTROSTATIC CHARGES RECEIPT AND STORAGE Electrostatic charges can exist in many things; for example, man-made-fibre clothing, moving machinery, objects with air blowing across them, plastic storage bins, |
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BENT LEAD transistor TO-92 Outline Dimensions
Abstract: 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c
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SC-59) SC-61) TE85L TE85R TE85N SC-70) BENT LEAD transistor TO-92 Outline Dimensions 2SC2712 equivalent 4TE12 diode ssc J Fet marking 2 AW 2SC2873 equivalent 90105 toshiba ultrasonic atomizing SMD TRANSISTOR MARKING 5c | |
101ONContextual Info: TOSHIBA _ [ 7 ] 7. Handling Devices Handling Devices 7.1 Transport Handle devices and packaging materials with care. To avoid damage to the devices, do not toss or drop packages. During transport, ensure that devices are not subjected to |
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Contextual Info: 5. Cleaning of Circuit Boards Circuit boards are cleaned a fte r devices have been soldered on. T h e follow ing points should be noted regarding cleaning. 1. These solvents are recom m ended for cleaning. ’ Freon TE, Freon T F Do not use chlorine based solvents triclene group, etc. . |
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Contextual Info: SSM3K15AFU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type U-MOS III SSM3K15AFU Load Switching Applications Unit: mm • 2.5 V drive • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) |
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SSM3K15AFU | |
Contextual Info: SSM3J56MFV TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type U-MOSⅥ SSM3J56MFV ○ Load Switching Applications • • 1.2 V drive Low ON-resistance:RDS(ON) = 390 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 480 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 660 mΩ (max) (@VGS = -1.8 V) |
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SSM3J56MFV | |
Contextual Info: SSM6P16FE TOSHIBA Field Effect Transistor Silicon P Channel MOS Type π-MOSVI SSM6P16FE High Speed Switching Applications Analog Switch Applications • Small package Low on-resistance Unit: mm : RDS(ON) 8 (max) (@VGS 4 V) : RDS(ON) 12 (max) (@VGS 2.5 V) |
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SSM6P16FE |