CLT506 Search Results

Senisys

Abstract: CLT506
Contextual Info: FASCO INDS/ SENISYS 40E 34=1=1730 D G00127G fl Ë I S E N I IGEEEEDI CLT506 [' Silicon Planar Phototransistor 0.138 C3.5H , 0.130 C3.303 1 DIMENSIONS ARE. IN INCHES CM ILUH ETER S2 c 0 .187 C4.753 0.167 C4.24] — 0 ,024 0.603 HAX. 0.021 *( 0 .5 3 } 0.017 10.433

H0A0872-n55

Abstract: H0A1405-1 H0A0865-L51 h0a1405 HOA708-1 HOA9 til78 phototransistor MOC70T3 ir diode TIL38 H0A1874-12
Contextual Info: Cross Reference Cross Reference Competition P/N Honeywell P/N Code Description Competition P/N 100 H0A0871-N55 B TRANS ASSY. PTX 5082-4205 CALL PHOTODIODES. P P P IN 101 H0A1872-12 BC TRANS ASSY. PTX 5082-4207 CALL PHOTODIODES. T018 TALL PIN 10501 H0A1872-1

TIL149

Abstract: HOA708-1 S-180-a55 SPX2862 HS-230-40W HOA708 SLOTTED OPTICAL SWITCH HOA1160 h0a2001 A11W
Contextual Info: ¿£i^±=<.-=is=a. L FASCO INDS/ Part Number SENISYS Replaced By 40E D 3411736 ^ Part Number Replaces ÜQQ1 3 3 Ô By CLI800 . S-870-T55 C L I8 0 0 A . S-875-T55 C L I8 0 0 M . S-870-N55 C L I8 0 0 M A .S-875-N55

1100C

Abstract: CLED166A CLED166B CLED166C CLED166D CLT506
Contextual Info: FASCO INDS/ SENISYS 4DE D 34=1=3730 0DG1314 E M SENI icHzzaaafl CLED166 Series T4UI Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • § • Storage to + 100“C

Contextual Info: FASCO INDS/ SENISYS 4DE D 34=1=1734 0DD1314 S r a S E N I ic E E a a a a e l-ptKi CLED166 Series G a lliu m A rs e n id e In fra re d Em itting D io d es ^ 0.138 C3.513 n iA 0.130 C3.303 U iA _ r O 1— 0.018 C0.46 0.014 C0.36) DIMENSIONS A R E IN INCHES EN ILLIM ET ER S)

KT853

Abstract: KT850 KT853A LTR-305D H0A0872-n55 H0A1405-1 h0a2001 MOC70T3 HOA708-1 smd diode 825B
Contextual Info: Cross Reference Competition Honeywell P/N P/N 100 H 0A0871-N55 50B2-4204 CALL PHOTODIODES, T 0 1 8 T A LL PIN 101 HOA1872-12 BC TR AN S A S S Y . PTX 5082-4205 CALL PHOTODIODES. P P PIN 10501 H 0A 1872-1 BC TRAN S A S S Y , PTX 5082-4207 CALL PHOTODIODES. T 0 1 8 T A LL PIN