SENISYS Search Results

Contextual Info: 4DE D • 3455736 0001001 3 01SENI FASCO INDS/ SENISYS CLT6053 Product Data CLT2020 CLT2030 Silicon NPN Planar CLT2035 Expitaxial Phototransistors GENERAL DESCRIPTION — The Clairex CLT6053, CLT2036, CLT2020 and CLT2030 are three terminal silicon NPN planar epitaxial phototransistors in a hermetic package.

Contextual Info: m 40E D 34 5CI73A 00D1051 A BBSENI FASCO INDS/ SENISYS T -4 K rb CLI200 CLI210 CLI220 CLI230 Optical Switches G E N E R A L D E SC R IPTIO N S — This Series o f optical switches provides a small rugged unit capable of circuit board mounting. The units feature a Valox housing and

Contextual Info: MOE T> B 34clcl73fl 000104S 4 B S E N I FASCO INDS/ SENISYS Photomods Neon Modules 1 CLM3120A CLM4120A Long Life Fast Rise and Decay Low Impedance Complete Electrical and Mechanical Isolation • High Cell To Lamp Voltage Breakdown I-.0I9" REF. -l.125"-2

Contextual Info: FASCO INDS/ SENISYS 40E D S 34c]i:]73fl DD0124L 0 O S E N I C-101 Series '•wu'K-m' r Optically Coupled Isolators Features Absolute Maximum Ratings Ta = 25<1C unless otherwise stated. • • • • • Storage and Operating + 100°C

Contextual Info: FASCO INKS/ SENISYS 40E D B 341=1736 000131b b B S E N I CLED191 Series_ Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage +100°C

Contextual Info: 40E Ii B 34=n73« 000101,7 0 B S E N I T-Hl-G! FASCO INDS/ SENISYS CLM8500HY CLM8600 LED- CLM8500HV and CLM8600 Photoconductor Isolators This new PHOTOMOD Series combines solid state lamps with Clairex® photoconductive cells in small, rugged axial-lead isolators.

Contextual Info: a oseni 4QE D es 3 4 ^ 7 3 6 dddidm b FASCO INDS/ SENISYS Photomods Six Volt Modules CLM3006A CLM4006A • Six Volt, 40 Ma Lamp • Low Impedance, Long Life • Isolation Voltage 2500V PAC • No Moving Parts APPLICATIONS CLM3006A and CLM4006A CLM3006A — This module is designed for applica­

Contextual Info: MOE D El 34*n73A DOOllOfl T S E N I FASCO INDS/ SENISYS 'T-l4l-c L <:\ Opto-Arrays Clairex Electronics Silicon Division welcomes in­ quiries for customer designed arrays of emitter and sensor chips in a wide variety of packages. Individual chips may be positioned in a pattern, or multiple

Contextual Info: FASCO INDS/ SENISYS 40E 3> m 34T=i73a 0001316 T El SEN! CLED291 Series Aluminum Gallium Arsenide Infrared Emitting Diodes Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • Storage Temperature .to + 100°G

Contextual Info: M0 E D FASCO INDS/ SENISYS m 3 4 CH 7 3 3 0001253 7 O S E N I CLD41/CLD42 Series Silicon Planar Photodiodes Features Absolute Maximum Ratings*1* Ta = 25°C unless otherwise stated. t • • • • Storage Temperature. . ,.-40*C tor + 15G*C

Contextual Info: 40E D 3 4 clc173a 0001222 & ^ S E N I T -m EE2I3I3I R-200/205 Series Reflective Optical Switches FASCO INDS/ SENISYS oo : i i DIMENSIONS ARE IN INCHES CHILLIHETERS1 0.390 £9.911 0.365 £9271 0.066 £1.68] e TYD 0.058 £1.47] *• ,TK 0.210 £5.33] . 0.190 £4.831 ^

Contextual Info: m 34*n?3a ooocma FASCO I N D S / SENISYS 40E » =1 H i S E N I i rm- CLL4040 CLL4041 CLL4042 Silicon Digital Output Detector * GENERAL DESCRIPTION The CLL 4040, CLL 4041 and CLL 4042 are monolithic integrated circuits containing a photo­ diode, low level amplifier, Schmitt trigger, output

Contextual Info: 40E D 3455736 □001164 4 ^ S E N I M V-73 GZM3I3I FASCO INDS/ SENISYS SSlotted Optical Switches o o tO T r'.h'. & c5 0.130 C3.303 nr. 0.120 C3.053 0lA 19 .3 0 3 18.803 — X * £C L— 0.990 1.010 [25.653 _ J [25.153 ^ i> | - i J_,_ 1 0.170 [4.323 J

Contextual Info: FASCO INDS/ SENISYS 40E D m 3 4 ^ 7 3 3 OQOlSTfl 8 S E N I CLL550/551 Series Digital Output IC Sensors Features Absolute Maximum Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating Temperature. -40“C to +1 0 0°C

T41300

Abstract: Skan-a-matic P11201 L11201/P11201 skan a matic L11201
Contextual Info: T - H -0 ( INDUSTRIAL PRODUCT'S « SEWaSYS SENSC« INTEGRATED SYSTEMS MOE D FASCO INDS/ SENISYS THRUBEAJVIS O EM Pair LI 1/P11 Series 40 34=1=1730 00013=10 1 El SENI Features: • ■ ■ B ■ ■ Rated Separation: 2 in. Beam Diameter: .10 in. Sm allest Detectable Object: .04 in.

C495

Abstract: ClD71A CLD71 CLD72 CLD71-A
Contextual Info: 34^730 MOE D FASCO INDS/ SENISYS GDDiata 1 ».'SENI B C H z a ia i CLD71/CLD72 Silicon Planar Photodiodes CLD71 - TOP V IE V CLD72 - TOP V IE V THE ANODE OF 'V ' VERSIONS IS IDENTIFIED BY A COLOR DOT ALL DIMENSIONS ARE IN INCHES MILLIMETERS] „ r *' V.W., C2.031

TRANSISTOR A850

Abstract: 4cn3 photodiode ge CLA90 CLA90AA
Contextual Info: 40E D m 34=^730 OODlDflS 2 ^ S E N I FASCO INDS/ SENISYS TUMI'S*! .0 5 0 - CLA90 CLA90AA Digital Output High Voltage Axial Lead Isolators GENERAL DESCRIPTION — The Clairex Electronics 1. ANODE CLA90 series isolator features axial lead construction for 2.CATHODE

C102 M

Abstract: c102 diode c102 CLA65 c 102 C-102-A C-102-B CLA65AA clairex C102B
Contextual Info: 40E D 34=n?3fl aG0124fl 4 S E N I FASCO INDS/ SENISYS Features Absolute M axim um Ratings Ta = 25°C unless otherwise stated. • • • • • Storage and Operating to + 100*0

CLT2130

Abstract: CLT2160 CLT2150 CLT2140 T018
Contextual Info: L 40E » Ea DDD10D3 7 SENI "P41-UÌ FASCO INDS/ SENISYS CLT2130 CLT2140 CLT2150 G.r CLT2160 Silicon Planar Epitaxial Phototransistors ±.007 f— J83 N A — H J WINDOW [ I n t.o n H— ±.oio .0 4 0 i I .147 O I A _ 1 GENERAL DESCRIPTION — The Clairex CLT2130,

CLD31

Abstract: CLD31BB CLD56 CLD56BB CLD 100 Senisys AAA01
Contextual Info: MOE T> E3 3M«n73A OOOOSTO M ESSENI 7 FASCO INDS/ SENISYS -^//-5/ -4 CLD31 CLD56 CLD31BB CLD56BB Product Data •325 01A. M . ±4t« ,170 t Silicon Planar Photovoltiac Diodes —1 •*— .2 0 0 ^ — s. / — CATHOŒ CATHO LONG LEAD 3 6 0 DlA., CLD 31 C LD 31B B

CLD42

Abstract: CL042 CLD41 CLD41BB CLD42BB
Contextual Info: 3 4 ^ 7 3 0 ooacma a ^ 40E D FASCO seni INDS/ SENISYS CLIMI CLD42 CLD41BB Silicon Planar CLD42BB Photovoltiac Diodes Product Data GENERAL DESCRIPTION — The CLD Series of Photo­ diodes is specifically designed to optimize Photovoltaic characteristics. They are all Silicon PN Planar diodes in

an 80171

Abstract: S-822SD diode A51 SLOTTED S-826SD S-831S20 slotted phototransistor "linear output" S171
Contextual Info: M O E D I S-171 Series 34^730 FASCO QDOliab INDS/ Ô ^SENI SENISYS Slotted Optical Sw itches P IN FUNCTIONS CORRESPOND. TO SYM BO LS SHQVN- IN TGP V IE W . 0.520 13.211 0.500 (12.703 DIMENSIONS A R E IN INCHES (M ILLIM ET ER S]' m 0.130 C3.30] 0.120 (3.05]

fasco 11BRW-300-F 1

Contextual Info: 40E D m 34^730 % 'Ì □00102ci 3 O S E N I FASCO INDS/ SENISYS 'T-'-U'U CLED5 CLED5-2 + .0 0 3 Gallium Arsenide Infrared Emitting Diode G ENERAL D ESCRIPTIO N - The Clairex CLED5 is a G allium A rsenide infrared em itting diode in a lensed herm etic post package. It em its an intense band of radia­

cd photocell

Abstract: til 31a TRIAC control Photoconductor CLM8500HV CLM8600 CLM6500
Contextual Info: MOE D S 34^730 FASCO OÜGlOb? 0 ^SENI INDS/ SENISYS CLM8500HV LEDCLM8600 Photoconductor Isolators CLM8500HV »r U and CLM8600 + J3JO ±JX> r .200 C J This new PHOTOMOD Series combines solid state lamps with Clairejc® photoconductive cells in small, rugged axial-lead isolators.