CM 2N65 Search Results

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

2Ns551

Abstract: 2N5219 2N5449 2N5769 2N5172 2N5209 2N5210 2N5220 2N5223 2N5232
Contextual Info: T032 Plastic Package T ra n ^ ^ jffiN Maximum Ratings Type No. ^CBO ^CEO ^EBO V) (V) (V) Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd (W) 'c (A) ^CBO ^CB 'ces VCE (V) (mA) ®(V) m Min Min Min 2N5172 25 25 5 0.4 0.15 CM 25 2N5209

2N6550

Abstract: CD860 cm8601 CM860 2N6550 equivalent ultra low igss pA "TO-72 package"
Contextual Info: n t a C R Y S T A W ebsite: WWW.Crystalonics.com L O N I C S ^ C Fax: i 631-585-4858 Phone: (631-981-6140) * See price list fo r ordering inform ation ULTRA LOW NOISE 2N6550 CM 860 SILI CON E P I T A X I A L J U N C T I O N CICI H CCCCfT TRANQIQTHR M f U AI /~\

2N3742

Abstract: bc140 Bc300 BC300-5 2N3678 2N4237 2N4926 2N5320 2N5321 2N5681
Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. 2N3678 Electrical Characteristics (Ta=25“C, Unless Otherwise Specified) ^cao ^CEO ^EBO (V) (V) (V) Pd (W) Min Min Min @Tc=25°c 75 55 6 0.8 'c 'cm (A) (A) 'c 8 0 W ^CB 'ces ^CE e (V) (ma)

Contextual Info: TO-39 Metal-Can Package Transistors NPN Maximum Ratings Type No. Electrical Characteristics (Ta=25'C, Unless Otherwise Specified) ^CBO ^C E O ^EBO PD Min (V) Min (V) Min (W) 0Tc=25°c 75 55 6 0.8 m 2N3678 'c (A) 0.8 *CM (A) ^CBO (PA) Max 0.01 VC8 *CES e (V)

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

BEL 100N TRANSISTOR

Abstract: BEL100N bel 100n transistor npn BEL 100N 2n 2222a transistor BEL100 TRANSISTOR bd 657 BF200 transistor transistor BF 245 bd115
Contextual Info: BHARAT EL EK /S E n i C O N D S Device No VC EO Volts min VcBO Volts mm DI 47E D V ebo VoHs min hFE at bias mm /max Ic mA 14353Tfl V ce V o lts 1 CM mA max P lo t mW max □□□□012 ICBO uA typ flTG • V ce Sat V o lts typ ÍT MHz typ BELI Cob pF typ

2N6550

Abstract: CD860 teledyne transistor teledyne crystalonics
Contextual Info: TELEDY NE COMPONENTS SÔE D • ôTlTbûa GQQbSS4 2 ■ 7 < Il - * 5 ULTRA LOW NOISE 2N6550 CM860 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 424 .230 MAX. 195t.005- Lo The 2 N 6 5 5 0 / C M 8 6 0 is a high, gm />D low noise Junction F.E.T. for low level

2N6547

Abstract: 2N6546
Contextual Info: s G S-THOHSON - D7E D | 7 ^ 5 3 7 . : 6 -7 C- 1 5 5- 7 1 D OQlTBia"!] 1" - / S ’- T^- 2N6546 IVIULTIEPITAXIAL MESA NPN H IG H V O L T A G E , H IG H C U R R E N T P O W E R SW IT C H The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3

2N6513

Contextual Info: ^zmi-^onductoi Lptoaucti, One. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6513 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package •High breakdown voltage •Low collector saturation voltage

Contextual Info: i., One. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6500 Silicon NPN Power Transistors DESCRIPTION With TO-66 package •Wide area of operation •High sustaining voltage APPLICATIONS •For high-speed switching and linearamplifier applications

Contextual Info: 2N6520 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta= 25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

2SC1730y

Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. 2N6517 v Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) ^CEO V EBO (V) (V) (V) Min Min Min Pd 'c (W> (A) @Tc=25°< 350 350 6 0.625 0.5 CBO 'cBO VCB *CES tpA) e (V) (pA) Max

m0spec 2N3055

Abstract: 2N6594 2n3055 collector characteristic curve 2N3055 2N6569 S200 200 Ampere power transistor S200C
Contextual Info: ¿2&M0SPEC PNP SILICON POWER TRANSISTOR PNP 2N6594 The 2N6594 is a general-purpose,EPIBAS power transistor designed for low voltage amplifier power switching applica­ tions. It is a complement to the NPN 2N6569 FEATURES: * Safe Operating Area- Full Power Rating to 40V

2N6545

Abstract: 2N6544 S200 300 volt 16 ampere transistor
Contextual Info: ÜE MOS PEC SWITCH MODE SERIES NPN SILICON POWER TRANSISTORS The 2N6544 and 2N6545 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fall NPN 2N6544 2N6545 time is critical.they are particularly, suited for 115 and 220 volt line

2N4889

Abstract: MM1712 2N4888 2N4419 mm1614 MM1712 transistor 2N4996 2N3633 2N6522 N6007
Contextual Info: TO-72 TO-72 TO-92 TO-98 TO-98 OOOOO OOOOO OOOOO CMCMg ? in m 0 0 in cmco tn in in in m in i co co COCO I r r r r I I COCO I 50 s o o o o o in in in in ^ o OOOO in 1 in m —in 1—T —o T— OO IOO o O I *- TT“ r* "ST s a m in in in rCMCMCMCMCM OOOOo ^ CMCMCM

2N3567

Abstract: NSDU07 transistor 2N3569 "NPN Transistors" 2n3567 NSD102 NSD458 2n3568 2N3569 92PU393 D40E5
Contextual Info: This 60 40 2N1613 also Avail. JAN/TX/V Versions TO-5 75 35 7 10 60 20 40 35 20 2N1711 TO-5 75 35 7 10 60 40 100 75 35 20 120 120 300 150 10 5.0 1.3 150 20 50 50 12 500 150 10 100 fiA 10 10 10 10 1.5 1.3 150 25 60 50 12 Note 1 12 500 150 10 100 pA IO jiA

2N5306 NATIONAL SEMICONDUCTOR

Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2

2N5286

Abstract: 2N5290 SOLITRON 2N5740 SDT13305 SDT3775 SDT85502 2N439S 2N5610 2N6562
Contextual Info: SOLITRON DEVICES INC ^ D eT| fl3t.flt.DE 0D0S7b5 7 l ~ T ' 3 3 - 0 / F ^ E x y K g T T a t m , © _ PLAN AR POWER TRAN SISTO RS § M&. DEVICE TYPE hpE MIN/MAX @ ic A VCE (sat) MAX (V) @ ic (A) *T MIN (MHz) PT

IN733A

Abstract: 2N551 IN768A 2N146 2N2405 2N339 2n3072 2N244 2N1234 2N1167
Contextual Info: 666-001 N r lN N C ^ n 'O N N O V T ic v lO O O 'n'O 'O O 'O O O^t VTi^VTiO 0 r | 0 4 '4 ' 0 \0 ' 0 0 0 0 0 00 0 0 0 CN-NArHCMO 0 0 O 00 o cn-nacm cmcm < m< m cacacananananaooco o n o h h h cMH4 , 'A n N r < 4 - nano cn-no cmcacmcmcmcmcmcmcm canono oo ono cacano

2N6547

Contextual Info: File Number 2332 2N6547 15-Ampere Power-Switching Transistor Features: • ■ ■ ■ TE R M IN A L D E S IG N A T IO N 100% H ig h te m p e ra tu re tested fo r 1 0 0 ° C p a ra m e te rs F a s t s w itc h in g sp e e d H ig h v o lta g e ra tin g Vcex = 4 5 0 V

2N6547

Abstract: 2N654 12 volt 200 Amp PWM 2N6546
Contextual Info: SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS The 2N6546 and 2N6547 transistors are designed for high- NPN 2N6546 2N6547 voltage .high-speed,power switching inductive circuits where fail time is criticai.they are particularly, suited for 115 and 220 volt line

Contextual Info: ! HARRIS SEMICON] SECTOR File Number 2332 SbE D • 4302571 0D4G5fl7 122 H H A S 2N6547 7=35 - / 9 15-Ampere Power-Switching Transistor Feature*: TERM INAL DESIGNATION ■ 700% High temperature tested for 100° C parameters ■Fast switching speed ■High voltage rating V'c e x = 450V

2N6547

Abstract: tf 115 250v 2a 12 volt 200 Amp PWM
Contextual Info: 2N6547 NPN POWER TRANSISTORS 400 VOLTS 15 AMP, 175 WATTS The 2N6547 transistor is designed for high-voltage, high­ speed power switching in inductive circuits where fall time is critical. It is particularly suited for 115 and 220 volt line operated switch-m ode applications such as: switching regu­