CMOS EEPROM Search Results

0.18-um CMOS technology characteristics

Abstract: atmel 048 MICRON RESISTOR Mos NMOS transistor 0.18 um CMOS atmel 018 0.18-um CMOS technology
Contextual Info: RF CMOS RF cmos 0.18 Micron Technology Atmel's 0.18 micron RF CMOS process technology provides a low-cost solution for high-performance RF applications. Key Features Key Benefits • 1.8V CMOS Transistors • Low Power • 3.3V I/O • Low Cost • Embedded EEPROM

FM93C56

Abstract: FM93C56E FM93C56V M08A MTC08
Contextual Info: SEMICONDUCTOR TM 2K-Bit Serial CMOS EEPROM FM93C56 2K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C56 device is 2048 bits of CMOS non-volatile electri­ cally erasable memory organized as 128x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

FM93C66

Abstract: FM93C66E FM93C66V M08A MTC08
Contextual Info: SEM ICONDUCTOR TM 4K-Bit Serial CMOS EEPROM FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface Features The FM93C66 device is 4096 bits of CMOS non-volatile electri­ cally erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

PL22V10-10N

Abstract: PL22V10-10A
Contextual Info: Product specification Philips Semiconductors Programmable Logic Devices CMOS programmable electrically erasable logic device PL22V10-10 FEATURES DESCRIPTION • Advanced CMOS EEPROM technology The Philips Semiconductors PL22V10-10 is a CMOS programmable electrically erasable

64x16

Abstract: 8DIP 28-DIP KM28C64B 128X16
Contextual Info: FUNCTION GUIDE MEMORY ICs 2.5 EEPROM 2 K b it 64K bit Remark 16x16 1MHz CMOS Ext.-timed 8DIP/8SOP Now 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46/G/GD/I 64x16 1MHz CMOS Self-timed 8DIP/8SOP Now KM93C46V/VG/VGD/I 64x16 250KHZ CMOS 3-OV-Operation 8DIP/8SOP Now

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL253 CMOS Programmable Electrically Erasable Logic Device Features • ADVANCED CMOS EEPROM TECHNOLOGY ■ FPLA ARCHITECTURE ■ COMPATIBLE PERFORMANCE — tpD = 30ns max, to E = 30ns max SUPERSET REPLACEMENT FOR PLS153

22CV10

Contextual Info: AMI PEEL 22CV10 Z SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device February 1993 Features General Description Advanced CMOS EEPROM Technology The AMI PEEL22CV10(Z) is a CMOS Programmable Electrically Erasable Logic device that provides a highperformance,

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL173 CMOS Programmable Electrically Erasable Logic Device Features • FPLA ARCHITECTURE ■ ADVANCED CMOS EEPROM TECHNOLOGY — — — ■ LOW POWER CONSUMPTION — 35m A + 1 .OmA/MHz max ■ COMPATIBLE PERFORMANCE

93c46

Abstract: tms1000 8051 interfacing with 93c46 93c46 6 93C46 dip instruction set and programming of 8096 memory 93C46 eeprom 93c46 93c46e 8051 interfacing to EEProm
Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features ideal For Low-Density Data Storage Advanced CMOS EEPROM Technology — — — • Read/Write Non-volatile Memory

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

PEEL programming

Abstract: 22CV10Z-25 22CV10 22CV10A-10 PEEL22CV10 22CV10A PEEL 22CV10A-15 22CV10A-7 22GV10
Contextual Info: PEEL 22GV10 Z A M SEMICONDUCTORS CMOS Programmable Electrically Erasable Logic Device i February 1993 Features General Description Advanced CMOS EEPROM Technology High Performance with Low Power Consumption The AMI PEEL22C V10(Z) is a CMOS Program m able

Contextual Info: INTERNATIONAL C M O S 5SE D 4flMQ707 DOOQMl 2 Product Preview INTERNATIONAL CMOS TECHNOLOGY, INC. 7 PEElIM 20CG10-12/PEE! 20CG1 0-15 CMOS Programmable Electrically Erasable Logic Device Features • 1 Micron CMOS EEPROM Technology Architectural Flexibility

sun hold RAS 0610

Abstract: oki Logic Motorola transistor 7144 MSC2304 M5M41000
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

Contextual Info: FM93C56 2K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C56 device is 2048 bits of CMOS non-volatile electrically erasable memory organized as 128x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. March 1991 PEEL 22CV10A CMOS Programmable Electrically Erasable Logic Device Features • Advanced CMOS EEPROM Technology Architectural Flexibility — 132 product term x 44 input AND array — Up to 22 inputs and 10 outputs

Contextual Info: 37E J> INTERNATIONAL C M O S 40 40707 0000347 7 T-46-19-07 INTERNATIONAL CMOS TECHNOLOGY, INC. PEEL 18CV8-15/PEEL™18CV8-20 CMOS Programmable Electrically Erasable Logic Devic6 Features • Architectural Flexibility Advanced CMOS EEPROM Technology — —

NM93C46

Abstract: 93C46T M08A MTC08
Contextual Info: NM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The NM93C46 devices are 1024 bits of CMOS non-volatile electrically erasable memory divided into 64 16-bit registers. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

Contextual Info: FM93C66 4K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C66 device is 4096 bits of CMOS non-volatile electrically erasable memory organized as 256x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

FM93C46

Contextual Info: FM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C46 device is 1024 bits of CMOS non-volatile electrically erasable memory organized as 64x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

Contextual Info: FM93C46 1K-Bit Serial CMOS EEPROM MICROWIRE Bus Interface General Description Features The FM93C46 device is 1024 bits of CMOS non-volatile electri­ cally erasable memory organized as 64x16 bit array. They are fabricated using Fairchild Semiconductor's floating-gate CMOS

68HCXX

Abstract: EEPROMs NM95C12 NM25C04
Contextual Info: SPECIALTY Products CMOS EEPROM Selection Guide National Semiconductor SPECIALTY Products CMOS EEPROM Selection Guide General Description Features National Semiconductor offers a full line of CMOS EEPROMs. Some share the MICROWIRE Serial Interface such as the NM93C06 and the NM93CS06; others share

IC 93c46

Contextual Info: INTERNATIONAL CMOS TECHNOLOGY, INC. 93C46 1,024-Bit Serial 5V only CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) Features • Advanced CMOS EEPROM Technology ■ Read/Write Non-volatile Memory — — — Single 5V supply operation 1,024 bits, 64 x 16 organization

80CXX

Abstract: uPD75X
Contextual Info: Preliminary Data INTERNATIONAL CMOS TECHNOLOGY, INC. 93CX56/93CX66 2,048/4,096-Bit CMOS Serial EEPROM with extended-voltage operation 2.5V to 6.5V Features Ideal For Low-density Data Storage • Advanced CMOS EEPROM Technology — — — ■ Read/Write Non-volatile Memory

25c08v

Contextual Info: CAT25C08, CAT25C16 8K/16K SPI Serial CMOS EEPROM FEATURES DESCRIPTION • 10 MHz SPI compatible The CAT25C08/16 is a 8K/16K Bit SPI Serial CMOS EEPROM internally organized as 1024x8/2048x8 bits. Catalyst’s advanced CMOS Technology substantially reduces device power requirements. The CAT25C08/