CNX83A
Abstract: E244343 OPTO611
Text: Global Supplier of Optoelectronic Solutions CNX83A ALL Product Lead Free, RoHs Compliant UL # E244343 Features: Schematic: 1 6 2 5 3 4 1. Current transfer ratio CTR min 40% at IF=10mA Vce=0.04V 2. High isolation voltage between input and output (Viso = 5300Vrms, 7500Vpk).
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CNX83A
E244343
5300Vrms,
7500Vpk)
OPTO611
CNX83A
E244343
OPTO611
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CNX83A
Abstract: CNX82A SL5582 SL5583 a140mW logic ic 6pin
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
a140mW
logic ic 6pin
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CNX83A
Abstract: CNX82A SL5582 SL5583
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
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CNX82A
Abstract: CNX83 CNX83A SL5582 SL5583
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
CNX83
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CNX83
Abstract: CNX82A CNX83A SL5582 SL5583 CNX83A an
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
CNX83
CNX83A an
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CNX82
Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
CNX82
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Untitled
Abstract: No abstract text available
Text: 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS CNX82A.W, CNX83A.W, SL5582.W & SL5583.W DESCRIPTION PACKAGE DIMENSIONS The CNX82A.W, CNX83A.W, SL5582.W AND SL5583.W, consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package.
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CNX82A
CNX83A
SL5582
SL5583
E90700)
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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MK135
MK136
MK137
MK138
MK139
MK140
Mk142
MK145
MK155
157kr
k2645
k4005
U664B
mosfet k4005
MB8719
transistor mosfet k4004
SN16880N
stk5392
STR451
BC417
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1000w inverter PURE SINE WAVE schematic diagram
Abstract: 1000w inverter PURE SINE WAVE schematic diagram smps 500w half bridge SCHEMATIC 1000w Power Semiconductor Applications Philips Semiconductors SCHEMATIC 1000w smps smps circuit diagram 48V SMPS 1000w "Power Semiconductor Applications" Philips BU2508 Transistor 500w SINE WAVE inverter schematic diagram smps 1kW
Text: S.M.P.S. Power Semiconductor Applications Philips Semiconductors CHAPTER 2 Switched Mode Power Supplies 2.1 Using Power Semiconductors in Switched Mode Topologies including transistor selection guides 2.2 Output Rectification 2.3 Design Examples 2.4 Magnetics Design
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification High-voltage optocouplers ÖUALITY tec h n o lo g ie s corp CNX82A/CNX83A S7E T> TMbbôSl OOOMbOS bS3 «fiTY FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable for use with
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CNX82A/CNX83A
CNX82A
CNX83Aare
OT231
CNX83A.
OT212.
74bbflSl
0DD4fl03
MSA048-2
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CNX82A
Abstract: philips cnx82a
Text: P h ilip s S em ico n d u cto rs Product specification CNX82A/CNX83A High-voltage optocouplers FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL integrated circuits • High degree of A C and DC
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CNX82A/CNX83A
CNX82A
CNX83Aare
OT231
CNX83A.
E90700
philips cnx82a
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philips cnx82a
Abstract: CNX83A CNX82A DE0805 435A CNX83 PHHI BS415 BS7002 25KVDC
Text: Produ ct sp ecification Philip» Semiconductors High-voltage optocouplers CNX82A/CNX83A FEATURES • High current transfer ratio and low saturation voltage, making the devices suitable tor use with TTL Integrated circuits • High degree of A C and DC insulation 3750 V (RMS and
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CNX82A/CNX83A
CNX82Aand
CNX83Aare
OT231
CNX82A
CNX83A.
CNX82A
CNX83A
bL53131
philips cnx82a
CNX83A
DE0805
435A
CNX83
PHHI
BS415
BS7002
25KVDC
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pc111 optocoupler
Abstract: PC113 optocoupler coy80ng optocoupler crossreference 4N25 PHILIPS optocoupler H11A1 philips cnx82a 4N35 cny17 optocoupler 4N25 optocoupler mct2e
Text: Philips Semiconductor» Optocouplers Cross-reference Guide O PT O CO U PLER PH ILIPS’ O PTO CO U PLER REPLA C E M E N T CODE no te l O PTO CO UPLER PH ILIPS’ O PTO CO UPLER REPLAC EM EN T CODE (note 1) CNX35 CNX35U direct H11A3 H11A3 direct CNX36 CNX36U
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CNX35
CNX35U
CNX36
CNX36U
CNY17-1
CNY17-2
CNY17-3
pc111 optocoupler
PC113 optocoupler
coy80ng
optocoupler crossreference
4N25 PHILIPS
optocoupler H11A1
philips cnx82a
4N35 cny17
optocoupler 4N25
optocoupler mct2e
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QT OPTOELECTRONICS cny17-2
Abstract: No abstract text available
Text: OPTOELECTRONICS OPTOCOUPLERS P h o t o t r a n s is t o r O u t p u t ; G a A s In p u t CTR Part Number ANODE[Î e] BASE CATHODE[2 1i N/C¡3 Ji 5] COLLECTOR 1 3 EMITTER 4N25 4N26 4N27 4N28 4N35 4N36 4N37 CNW11AV-1 CNW11AV-2 CNW11AV-3 CNW83 CNW85 CNX35U CNX36U
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CNW11AV-1
CNW11AV-2
CNW11AV-3
CNW83
CNW85
CNX35U
CNX36U
CNX38U
CNX39U
CNX83A
QT OPTOELECTRONICS cny17-2
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CT2300
Abstract: No abstract text available
Text: OPTOELECTRONICS O P T O C O U P LER S P H O T O T R A N S I S T O R O U T P U T ; G a A s IN P U T CTR @ P art 1 0 m A l F % Num ber ANODE CATHODE [2 N.C 6] BA SE U [3 r " A 5] COLLECTOR I— 3 B V C eo (V ) B V cbo ^ C E (sat) to N / to F F (V ) (V ) (M S)
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CNW11AV-1
H11A2
H11A3
H11A4
H11A5
T2200
CT2200
MCT2201
CT2300
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Untitled
Abstract: No abstract text available
Text: EH OPTOELECTRONICS OPTOCOUPLERS P h o t o t r a n s i s t o r O u t p u t : G a A s 1n p . 1 1 CTR @ Part Num ber 4N25 CATHODE [2 N/C {3 6] BASE <r 5] COLLECTOR L L_ 20 — B V CE0 B V cbo V (V) min min 30 A g en cy V CE (sat) 'O N ^ O F F (V) m ax (M S )
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CNW11AV-1
CNW11AV-1
CNW11AV-2
CNW11
CNW11AV-3
CNW83
CNX39U
CNX83A
CNY17-1
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LM 8105
Abstract: SD318 AN6610 5354A B1134 SE773 CPL-2503 B1133 SE158 6363t
Text: [•a OPTOELECTRONICS P art N um ber PART NUM BER INDEX Page P art N um ber Page P art N um ber Page P art N um ber Page P art Num ber 1N6264 37 C N Y17F-3 13 G M A 8975 C 144 H11D4 14 H CPL-2730 1N6265 37 C N Y17F-4 13 G M C 2275 C 148 H11F1 20 Page _ 17
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1N6264
1N6265
1N6266
6N135
6N136
6N137
6N138
6N139
740L6001
740L6010
LM 8105
SD318
AN6610
5354A
B1134
SE773
CPL-2503
B1133
SE158
6363t
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FET BFW10
Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI
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BA220
BA221
BA223
BA281
BA314
BA315
BA316
BA317
BA318
BA423
FET BFW10
KP101A
FET BFW11
BDX38
KPZ20G
CQY58A
BFW10 FET
RPW100
B0943
OF FET BFW11
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbS3131
BLU52
1N321
BYW56
1N321A
BLV97
1N322
TXD10K40
TXD10K60
BT1690
BT808
1N5004
TXD10H60
mp8706
TXC10K40
BSTC1026
BT13G
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transistor f6 13003
Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.
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SC08b
transistor f6 13003
equivalent transistor bj 131-6
transistor Eb 13003 BM
BB112
smd TRANSISTOR code marking 2F 6n
a1211 lg
CQY58
BU705
TRANSISTOR 131-6 BJ 026
philips om350
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BGY41
Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.
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LCD01
BGY41
BFW10 FET transistor
CQY58
germanium
RX101
equivalent components FET BFW10
bd643
bf199
283 to92 600a transistor
zener phc
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