COL J8 Search Results

JS-48A

Contextual Info: 43 Cable distribution panels Distribution Panels. Table B: Jack/Panel Compatibility Ordering Loaded Distribution Panels. Example: *JS - 52 D3SF7 / U BJ28 Panel type -Table A, Col 2 Mounting hole -Table B, Col. 1 Jack Type -Table B, Col. 3/4 ("U" designates 75Ω)

h/JS14

Contextual Info: 52 Cable distribution panels Distribution Panels Table B: Jack/Panel Compatibility Ordering Loaded Distribution Panels Example: *JS - 52 D3SF7 / U BJ28 Panel type -Table A, Col 2 Mounting hole -Table B, Col. 1 Jack Type -Table B, Col. 3/4 ("U" designates 75Ω)

Contextual Info: Cable T a b le Column 1 Mtg Hole U AD DD4 A D I 95 D 8 S F 12 II u u u u D 3SF7 u BJ ?7 D 3SF 7 u u u B J 2 8 /B J 2 4 D 3SF6 D 2SF3 D 8SF11 D 2SF3 D 3 *JS - 52 D3SF7 / U1BJ28 Panel type -Table A, Col 2 -1 M ounting hole -Table B, Col. 1 -Jack Type -Table B, Col. 3/4 ("U" designates 7 5 fl -*JS*JSI-

Contextual Info: 13 12 10 76035 - MODULE TYPE — TAIL PLATING TYPEGUIDE LEFT — TIN/LEAD = 2 GUIDE LEFT — TIN ONLY = 3 GUIDE LEFT W/END - TIN/LEAD = 6 GUIDE LEFT W/END — TIN ONLY = 7 KEY ORIENTATION 0 = NO KEY 1=A 2 =B 3 =C 4 =D 5 =E 6 =F 7 =G =H tt OF COLUMNS 8 = 8 COL

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

STM32TS60

Abstract: multi-touch controller STM32 F4 ARM Cortex M4 cortex a9 core processor architecture Resistive multi-touch panel cortex a9 col j8 stm32 spi touch screen of mobile
Contextual Info: STM32TS60 Multi-touch screen controller device using a digital resistive touchpanel with I²C, SPI, UART and USB interfaces Data brief Features FBGA • Patented digital resistive multi-touchpanel technology powered by PmatrixTM firmware engine ■ Able to track up to 10 independent touches

STM32 IWDG

Abstract: stm32 encoder AN2606 stm32 timer STM32 F4 touch frame quadrature encoder stm32 ARM stm32 Cortex M4 manual STM32 touch sensing STM32 F4 pwm AN2606 stm32 switch between JTAG-DP and SW-DP
Contextual Info: STM32TS60 ARM -based 32-bit MCU with resistive multitouch engine, 32 KB Flash, USB, 5 timers, 2 ADCs, and 6 communication interfaces Data brief Features FBGA • Core: ARM 32-bit CortexTM-M3 CPU – 72 MHz maximum frequency, 1.25 DMIPS/MHz Dhrystone 2.1

J10A

Abstract: Cj6b LT1580C EPF6016ATC144-2 15000005 RJ45 connector SHIELD CER-0805
Contextual Info: 5 4 3 2 1 D D 2 General pages 2-3) UTOCLK_SEL1 UTOCLK_SEL2 ATM Interface B (pages 6-7) ATM Interface A (pages 4-5) UTOCLK_SEL1 UTOCLK_SEL2 RXA_CLK RXB_CLK RXA_CLK RXB_CLK TXA_CLK TXB_CLK PHY_UTO_CLK ETHERNET_CLK 19_44MHZ 20MHZ TDM_FPGA_CLK TXA_CLK TXB_CLK

Delta LF8505

Abstract: delta lf8731 YCL PT163020 Transpower HB826-2 YCL PH406466 lf8505 LF8731 Pt163020 lf8505 delta PH406466
Contextual Info: 5 4 3 2 1 D D REVISION HISTORY DATE: 10/18/01 12/19/01 DESCRIPTION REVISION Preliminary Add JP39-JP42 for TEST1, TEST2, MUX1 and MUX2 setup. Rename J7 from reverse MII to PHY mode MII. 1 Rename J8 from Forward MII to MAC mode MII. Rename J9 from reverse MII to PHY mode MII.

AMP 787170-4

Abstract: Delta LF8731 LF8505 Pt163020 YCL PT163020 8P4R220 LF8731 558-5999-q9 LED51 HI1206N101R-00
Contextual Info: 5 4 3 2 1 D D REVISION HISTORY DATE: 10/18/01 12/19/01 DESCRIPTION Preliminary Add JP39-JP42 for TEST1, TEST2, MUX1 and MUX2 setup. Rename J7 from reverse MII to PHY mode MII. Rename J8 from Forward MII to MAC mode MII. Rename J9 from reverse MII to PHY mode MII.

RA12

Abstract: 512-MBIT
Contextual Info: 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O Document Title 4Bank x 8M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Oct. 2004 Preliminary 0.2 Package size 10 x 13 [mm2] May. 2005 Preliminary

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 8M x 4Bank x16I/O Document Title 4Bank x 8M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft Oct. 2004 Preliminary 0.2 Package size 10 x 13 [mm2] May. 2005 Preliminary

Contextual Info: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

EM6A9320BIA-4H

Abstract: EM6A9320BIA ba1s EM6A9320BI EM6A9320 EM6A9320BIA-5H J3J10 e-tron
Contextual Info: EtronTech EM6A9320BIA 4M x 32 bit DDR Synchronous DRAM SDRAM Etron Confidential Preliminary (Rev 1.7 Nov. /2009) Features Overview • Fast clock rate: 200/250 MHz • Differential Clock CK & CK input The EM6A9320 DDR SDRAM is a high-speed CMOS double data rate synchronous DRAM

LP SDRAM

Contextual Info: Preliminary HY5S5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

RA12

Contextual Info: Preliminary HY5S5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

Contextual Info: Preliminary HY5Y5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

A11BA1

Contextual Info: Preliminary HY5W5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

Contextual Info: HY5W2B6DLF P Series 4Banks x 2M x 16bits Synchronous DRAM Document Title 4Bank x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date Remark 0.1 Initial Draft MAR. 2004 Preliminary 0.2 Deleted Preliminary May. 2004 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

LP SDRAM

Contextual Info: Preliminary HY5Y5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

Contextual Info: Preliminary HY5S5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

Contextual Info: Preliminary HY5W5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

HY5S5A6

Contextual Info: Preliminary HY5S5A6DF-xF 4Banks x 4M x 16bits Synchronous DRAM DESCRIPTION The Hynix Low Power SDRAM is suited for non-PC application which use the batteries such as PDAs, 2.5G and 3G cellular phones with internet access and multimedia capabilities, mini-notebook, handheld

Contextual Info: HY5S2A6C L/S F / HY5S26CF 4Banks x 2M x 16bits Synchronous DRAM Revision History Revision No. History Draft Date 0.9 Changed DC Spec. & Pin Cap. Sep. 2002 Remark This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for