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    COMMON COLLECTOR NPN ARRAY Search Results

    COMMON COLLECTOR NPN ARRAY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TRS8E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 8 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    TRS10E65H Toshiba Electronic Devices & Storage Corporation SiC Schottky Barrier Diode (SBD), 650 V, 10 A, TO-220-2L Visit Toshiba Electronic Devices & Storage Corporation

    COMMON COLLECTOR NPN ARRAY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ULN2003 ac

    Abstract: No abstract text available
    Text: UTC ULN2003 LINEAR INTEGRATED CIRCUIT THESE HIGH-VOLTAGE,HIGHCURRENT DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive


    Original     		PDF ULN2003 OP-16 ULN2003 500mA 200mA 250mA 300mA 350mA QW-R113-001 ULN2003 ac

    Darlington pair IC

    Abstract: darlington arrays darlington buffer array J2004
    Text: PJ2003/PJ2004 High-Voltage, High-Current Darlington Arrays arlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.


    Original     		PDF PJ2003/PJ2004 PJ2003 PJ2004 16ays 27BSC 05BSC Darlington pair IC darlington arrays darlington buffer array J2004

    darlington buffer array

    Abstract: Darlington pair IC darlington arrays
    Text: PJ2003/PJ2004 High-Voltage, High-Current Darlington Arrays arlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.


    Original     		PDF PJ2003/PJ2004 PJ2003 PJ2004 27BSC 05BSC darlington buffer array Darlington pair IC darlington arrays

    ULN2003 features

    Abstract: ULN2003 Darlington pair IC pin of uln2003 data sheet uln2003 uln2003 AND PIN Darlington pair IC schematic ULN2003 ttl ULN2003 IC ULN2003 application note
    Text: ULN2003 LINEAR INTEGRATED CIRCUIT THESE HIGH-VOLTAGE,HIGHCURRENT DESCRIPTION Darlington arrays are comprised of seven silicon NPN darlington pairs on a common monolithic substrate. All units have open-collector outputs and integral diodes for inductive load transient suppression.


    Original     		PDF ULN2003 OP-16 ULN2003 500mA 350mA ULN2003 features Darlington pair IC pin of uln2003 data sheet uln2003 uln2003 AND PIN Darlington pair IC schematic ULN2003 ttl ULN2003 IC ULN2003 application note

    Untitled

    Abstract: No abstract text available
    Text: CA3082 Transistors Common Collector Transistor Array Number of Devices7 Type NPN/PNP V(BR)CEO (V)16 V(BR)CBO (V) I(C) Max. (A)100m P(D) Max. (W)750m Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)125 I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF CA3082 Code16-9 NumberTR01600009

    Untitled

    Abstract: No abstract text available
    Text: CA3082N Transistors Common Collector Transistor Array Number of Devices7 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)500m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30Ž


    Original     		PDF CA3082N Code16-16 NumberTR01600016

    Untitled

    Abstract: No abstract text available
    Text:  !" MONOLITHIC 9 NPN PHOTRANSISTOR ARRAY EEEEEEEEEEEEEEEECFCA93298C OIT26 consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is


    Original     		PDF OIT26 300-900nm. 030mm 12234556667832897A8B5C

    transistor marking code wts

    Abstract: pnp array Q62702-C2496 tansistor npn transistor bc icbo nA npn Tansistor BC
    Text: BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47kΩ, R2 = 47kΩ PNP: R1 = 2.2kΩ, R2 = 47kΩ


    Original     		PDF Q62702-C2496 OT-363 Dec-09-1996 transistor marking code wts pnp array tansistor npn transistor bc icbo nA npn Tansistor BC

    TRANSISTOR 7812

    Abstract: HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B 8660
    Text: HFA3046, HFA3096, HFA3127, HFA3128 TM Data Sheet October 1998 File Number 3076.10 Ultra High Frequency Transistor Arrays Features The HFA3046, HFA3096, HFA3127 and the HFA3128 are Ultra High Frequency Transistor Arrays that are fabricated from Intersil Corporation’s complementary bipolar UHF-1


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 TRANSISTOR 7812 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B 8660

    transistor digital 47k 22k PNP NPN

    Abstract: VPS05604 "two TRANSISTORs" sot-363 pnp npn WTs12 Marking wts sot
    Text: BCR 48PN NPN/PNP Silicon Digital Transistor Array 4 • Switching circuit, inverter, interface circuit, 5 6 driver circuit • Two galvanic internal isolated NPN/PNP Transistors in one package • Built in bias resistor 2 1 NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF VPS05604 OT-363 EHA07193 EHA07176 Oct-19-1999 transistor digital 47k 22k PNP NPN VPS05604 "two TRANSISTORs" sot-363 pnp npn WTs12 Marking wts sot

    DSA0037427

    Abstract: pnp array SEMD48 transistor digital 47k 22k PNP NPN
    Text: SEMD48 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor 1 NPN: R1 = 47kΩ, R2 = 47kΩ


    Original     		PDF SEMD48 OT666 EHA07176 OT666 Feb-26-2004 DSA0037427 pnp array SEMD48 transistor digital 47k 22k PNP NPN

    transistor digital 47k 22k PNP NPN

    Abstract: BCR48PN VPS05604
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k


    Original     		PDF BCR48PN OT-363 VPS05604 EHA07193 EHA07176 Nov-29-2001 transistor digital 47k 22k PNP NPN BCR48PN VPS05604

    4733 PNP

    Abstract: 80E08 HFA3046 4407 ic data 9544 transistor UHF power TRANSISTOR PNP
    Text: HFA3046, HFA3096, HFA3127, HFA3128 Data Sheet [ /Title HFA3 046, HFA30 96, HFA31 27, HFA31 28 /Subject (Ultra High Frequency Transistor Arrays ) /Autho r () /Keywords (Intersil Corporation, five, transistor array, NPN PNP, 8V, 15ma, uhf ghz ft, low October 1998


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA30 HFA31 HFA3127 4733 PNP 80E08 HFA3046 4407 ic data 9544 transistor UHF power TRANSISTOR PNP

    transistor digital 47k 22k PNP NPN

    Abstract: IC Marking AC 6 PIN
    Text: BCR48PN NPN/PNP Silicon Digital Transistor Array 4  Switching circuit, inverter, interface circuit, 5 6 driver circuit  Two galvanic internal isolated NPN/PNP Transistors in one package  Built in bias resistor 2 1 NPN: R1 = 47k, R2 = 47k VPS05604 PNP: R1= 2.2k, R 2 = 47k


    Original     		PDF BCR48PN VPS05604 EHA07193 OT-363 EHA07176 OT363 transistor digital 47k 22k PNP NPN IC Marking AC 6 PIN

    234 8715

    Abstract: Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127 HFA3127B HFA3128 HFA3128B
    Text: HFA3046, HFA3096, HFA3127, HFA3128 S E M I C O N D U C T O R Ultra High Frequency Transistor Arrays August 1996 Features Description • NPN Transistor fT . . . . . . . . . . . . . . . . . . . . . . . . 8GHz The HFA3046, HFA3096, HFA3127 and the HFA3128 are


    Original     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 234 8715 Ic 9430 HFA3046 HFA3046B HFA3096 HFA3096B HFA3127B HFA3128B

    Untitled

    Abstract: No abstract text available
    Text: Small Signal Transistor Arrays UNA0216 UN216 Silicon PNP epitaxial planar type (3 elements) Silicon NPN epitaxial planar type (3 elements) Unit: mm For motor drives 12 3 • Absolute Maximum Ratings Ta = 25°C Symbol Rating Unit Collector-base voltage (Emitter open)


    Original     		PDF UNA0216 UN216)

    NJD6506S

    Abstract: NJM6506 NJD65Q6 6506 NJD6507S NJD650SS
    Text: NPN TRANSISTOR ARRAY NJM6506/6507 The NJD65Q6 and NJD6507 each consist of four general purpose silicon NPN transistors on common emitter. The NJD 6506 contains resistors for input bias. • Absolute Maximum Ratings Ta=25°C (6506) (6507) (6507) (6507) Collector to Emitter Voltage


    OCR Scan     		PDF NJM6506/6507 NJD65Q6 NJD6507 500mW NJD6506S NJD6S07S 400il NJD6506 10/iA NJM6506 6506 NJD6507S NJD650SS

    ne5504n

    Abstract: NE5501 NE5503N Ne5502 NE5504 cmos open collector NE5501N Transistor 5503
    Text: N E5501/5502/5503/5504-N DESCRIPTION BLOCK DIAGRAM PIN CONFIGURATION These high-voltage, high-current Darling­ ton transistor arrays are comprised of seven silicon NPN Darlington pairs on a common m onolithic substrate. All units feature open collector outputs and integral suppression


    OCR Scan     		PDF E5501/5502/5503/5504-N 600mA NE5501 NE5502 NE5504 /5502/5503/5504-N NE5503 ne5504n NE5503N NE5504 cmos open collector NE5501N Transistor 5503

    transistor bc 577

    Abstract: bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit • Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47k£2, R2 = 47kQ PNP: R1 = 2.2kfl, R2 = 47ki2


    OCR Scan     		PDF 47ki2 Q62702-C2496 OT-363 transistor bc 577 bc 574 transistor common collector pnp array transistor marking code wts transistor Bc 574 47k2 MARKING wts sot363 marking 32 SOT-363 transistor BC 575

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


    OCR Scan     		PDF 47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75

    Untitled

    Abstract: No abstract text available
    Text: H- Il GENNUM ' corporati Om LA200 Series LA250 mODM6 SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		PDF LA201 LA202

    MDC03

    Abstract: Marking TRANSISTOR 737 common collector pnp array common collector npn array MFW14 Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array
    Text: MDC03 Transistor, array, 3 x NPN, 3 x PNP Features Dimensions Units: mm • • available in MFW14 package package marking: MDC03 • three NPN transistors with common emitter and three PNP transistors with common emitter are mounted in single package •


    OCR Scan     		PDF MDC03 MFW14 MFW14) MDC03 -100m -100m QG153EH Marking TRANSISTOR 737 common collector pnp array common collector npn array Diode marking MFW transistor marking code 2C MDC-03 6 "transistor arrays" ic pnp 8 transistor array

    Untitled

    Abstract: No abstract text available
    Text: G EIM IM U M c or por at i Om LA200 Series LA250 mOBM SEMICUSTOM LINEAR ARRAYS DATA SHEET CIRCUIT DESCRIPTION ADVANTAGES OF THE SEMICUSTOM ARE: • custom circuitry at low cost The Gennum semicustom integrated circuits are arrays of bipolar transistors, p diffused resistors, pinch resistors, junction


    OCR Scan     		PDF LA200 LA250

    Transistor TT 2144

    Abstract: Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09
    Text: HFA3046, HFA3096, HFA3127, HFA3128 H a r r is S E M I C O N D U C T O R March 1998 Ultra High Frequency Transistor Arrays Features Description • NPN Transistor f r . 8GHz • NPN Current Gain (hpE).


    OCR Scan     		PDF HFA3046, HFA3096, HFA3127, HFA3128 HFA3127 HFA3128 HFA3046 Transistor TT 2144 Sii 9573 2907 pnp transistor NPN/Transistor TT 2144 Sii 9024 22E09