CONTOROLLER Search Results

RPR-363A

Contextual Info: Page 1 of 5 Pri Specification M 1 . Part number Type R P R - 3 6 3 A ed o ft e ic a l switch R P R -3 6 3 A 2 . Construction GaAs Infrared Light Em itter,Silicon Planar Type Phototransistor 3 . Aplication All kinds of contoroller 4 . Dimension Fig-1 5 . Absolute Max Ratings

FC54M

Abstract: RST32 CMP407 CMP-506
Contextual Info: TMP19A64C1DXBG Contents TMP19A64C1DXBG 1. ・Overview and Features 2. ・Pin Layout and Pin Functions 3. ・Processor Core 4. ・Memory Map 5. ・Clock/Standby Control 6. ・Interrupts 7. ・Input/Output Ports 8. ・External Bus Interface 9. ・Chip Selector and Wait Contoroller

DIL208

Abstract: ICE103
Contextual Info: A 6 B C D PX-ICE-10300 FLATソケット変換時寸法図 17.41 6 93.00 5 45.70 41.00 45.70±1.00 5 9.50 PRB-EX-DIL208-AXN/NQ103 4 12.55 4 1.60 9.00 76.75 CONTOROLLER ターゲット基板 パッケージセンター 34.45 10.91±1.00 65.05 3 3 76.75 150.00

ytz420

Abstract: yamaha LSI-4TZ420A5
Contextual Info: YAMAHA L S ¡ YTZ420 FCC Fieldbus Communication Contoroller LSI YAMAHA CORPORATION YTZ420 CATALOG CATALOG No. : LSI-4TZ420A5 1996.7 YTZ420 1 I Ä General Description YTZ420 is a communication controller intended for use in a node of fieldbus operating per International standard,

XC6371

Abstract: XC6372 XC6373
Contextual Info: XC6371/XC6372/XC6373 Series ETR0402_002 PWM Controlled Step - Up DC/DC Contorollers/Convereters ☆GO-Compatible •GENERAL DESCRIPTION The XC6371/6372/6373 series are a group of PWM controlled and PWM/PFM controlled step-up DC/DC converters. The built-in 1.4Ω switching transistor type enables a step-up circuit to be configured using only three components, a coil, a diode,

LSI-4TZ420A5

Abstract: YTZ420 YAMAHA RA 200
Contextual Info: YAMAHA L S i _ YTZ420 FCC Fieldbus Communication Contoroller LSI YAMAHA CORPORATION YTZ420 CATALOG CATALOG No. : LSI-4TZ420A5 1996.7 mmm y t z 420 General Description Physical Layer YTZ420 is a com m unication controller intended for use in ;i nude o f lieldhus operating per International standard.

Toshiba TB 1230 N

Abstract: TMPZ84C011 TMPZ84C011A TMP284C011 FO34
Contextual Info: TOSHIBA TMPZ84C011A 3. OPERATIONAL DESCRIPTIONS 3.1 ENTIRE BLOCK DIAGRAM AND OPERATION OF EACH BLOCK 3.1.1 Entire Block Diagram 110489 Figure 3.1.1 Entire Block Diagram MPUZ80-302 TOSHIBA TMPZ84C011A 3.1.2 Operation of Each Block The TMPZ84C011A largely consists of a processor MPU , a counter/timer circuit

Contextual Info: HM5425161B Series HM5425801B Series HM5425401B Series 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword x 16-bit x 4-bank/8-Mword x 8-bit x 4-bank/ 16-Mword x 4 -bit x 4 -bank HITACHI ADE-203-1077 Z Preliminary Rev. 0.0 Jun. 28, 1999

lem lt 2000

Abstract: M66244FP
Contextual Info: PRELIMINARY DATA SHEET MITSUBISHI <DIGITAL ASSP> M66244FP June 1998 Ver.8.0.0 High Speed Monolithic Pulse Width Modulator NOTE:This is not final specification. Some parametric limits are subject to change DESCRIPTION The M66244FP is a high-speed digitally programmable pulse width modulator PWM which

ML610Q407

Abstract: KDS 4B 12 MHZ crystal t3d7 diode ML610Q4 SCK032 5252 F 1009 "integrated circuit" OKI ML610Q407 ML61040 S1B10 3 pin preset resistor 10k
Contextual Info: FEUL610Q409-01 ML610Q407/ML610Q408/ML610Q409 User’s Manual Issue Date: Nov. 7, 2010 NOTICE 1. The information contained herein can change without notice owing to product and/or technical improvements. Before using the product, please make sure that the information being referred to is up-to-date.

Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21,1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

RBS 2954

Abstract: RBS 2964 7812 a
Contextual Info: TO SHIBA TMP87CH29/K29/M29 CMOS 8 -Bit Microcontroller TMP87CH29U/N, TMP87CK29U/N, TMP87CM29U/N The 87CH29/K29/M29 are high-speed and high-performance 8 -bit single chip microcomputers. These MCU contains CPU core, ROM, RAM, a LCD driver, multi-function timer/counters, an A/D converter, two clock

nec V850e2m manual

Abstract: v850E2M architecture v850e2 architecture
Contextual Info: Cover User’s Manual 32 V850E2/PG4-L User’s Manual: Hardware Renesas microcomputers V850 Series All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by

28 pin ic TM 1628

Abstract: DataSheet MTU 956 CHN 517 CHN 522 chn 622 CHN 623 Diodes CHN 849 T20 96 diode low noise motor controll chn 631
Contextual Info: REJ09B0023-0400 The revision list can be viewed directly by clicking the title page. The revision list summarizes the locations of revisions and additions. Details should always be checked by referring to the relevant text. 32 SH7641 Hardware Manual Renesas 32-Bit RISC Microcomputer

HB54A169FN-8D

Abstract: HB54A89FM-10D HB54A89FM-8D HB54A169FN-10D Hitachi DSA00196 Nippon capacitors
Contextual Info: HB54A89FM Series HB54A169FN Series HB54A89FM 64 MB Unbuffered DDR SDRAM DIMM 8-Mword x 72-bit, 1-Bank Module 9 pcs of 8 M × 8 Components HB54A169FN 128 MB Unbuffered DDR SDRAM DIMM 16-Mword × 72-bit, 2-Bank Module (18 pcs of 8 M × 8 Components) ADE-203-948 (Z)

bst 1046

Contextual Info: HM5425161B Series HM5425801B Series HM5425401B Series 256M SSTL_2 interface DDR SDRAM 143 MHz/133 MHz/125 MHz/100 MHz 4-Mword x 16-bit × 4-bank/8-Mword × 8-bit × 4-bank/ 16-Mword × 4-bit × 4-bank E0086H20 Ver. 2.0 Jan. 23, 2002 Description The HM5425161B, the HM5425801B and the HM5425401B are the Double Data Rate (DDR) SDRAM

67s18258

Contextual Info: for spcc. confirrnation SUN HM67S18258 Series 262144 words x 18 bits Synchronous Fast Static R A M P ro d u c t P review Rev. 3 HITACHI Features Dec. 10 1996 Pin A rrangem ent 3,3 V ± 5 % Operation LV C M O S C om patible Input and Output 1 2 ro O o OOo

BP-119

Contextual Info: HM67S36130 Series 131,072-words x 36-bits Synchronous Fast Static RAM HITACHI ADE-203-659A Z Product Preview Rev. 1 Feb. 21, 1997 Features • 3.3V ± 5% Operation • LVCMOS Compatible Input and Output • Synchronous Operation • Internal self-timed Late Write

Contextual Info: for spec. confirmation SUN HM67S36130 Series 131072 words x 36 bits Synchronous Fast Static RAM Product Preview Rev. 3 HITACHI Features Pin Arrangement • 3.3V:t 5% Operation • LVCMOS Compatible Input and Output Synchronous Operation Internal self-timed Late Write

Quanta MK1

Contextual Info: User’s Manual 78K0/FE2 8-Bit Single-Chip Microcontrollers PD78F0887 A μPD78F0888(A) μPD78F0889(A) μPD78F0890(A) μPD78F0887(A2) μPD78F0888(A2) μPD78F0889(A2) μPD78F0890(A2) The 78K0/FE2 has an on-chip debug function. Do not use this product for mass production after the on-chip debug function has been used because its reliability cannot

MD-001A

Contextual Info: MN103E010HRA, MN103E040HYB Type MN103E010HRA MN103E040HYB Command Cache 16 K-byte 4-way, set-associative Data Cashe 16 K-byte (4-way, set-associative) SRAM Used by Both Instructions and Data Package 16 K-byte BGA292-P-2727 FLGA424-C-1717 7.5 ns (at 1.8 V tolerance = ± 5%, 133 MHz)

0f498

Abstract: FEUL610409-06
Contextual Info: FEUL610409-06 ML610407/ML610408/ML610409 User’s Manual Issue Date: Jul. 18, 2012 NOTES No copying or reproduction of this document, in part or in whole, is permitted without the consent of LAPIS Semiconductor Co., Ltd. The content specified herein is subject to change for improvement without notice.

Contextual Info: DATA SHEET R-IN32M3 Series R18DS0008EJ0200 LSI for Industrial Ethernet Dec 9, 2013 1. Overview 1.1 Introduction Ethernet communication continues to spread rapidly in the field of industrial automation as manufacturers seek to improve the capability, efficiency, and flexibility of their organizations. Modern Industrial Ethernet applications require

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT µPD44164084, 44164184, 44164364 18M-BIT DDRII SRAM 4-WORD BURST OPERATION Description The µPD44164084 is a 2,097,152-word by 8-bit, the µPD44164184 is a 1,048,576-word by 18-bit and the µPD44164364 is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS