CPD80 Search Results

CMOD2004

Abstract: CPD80V CMDD2004 1N3070 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

C 704 diode

Abstract: DIODE R3 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au-As - 13,000Å

1N3070

Abstract: CMDD2003 CMDD2004 CMPD2003 CMPD2004 CPD80
Contextual Info: Central PROCESS TM Semiconductor Corp. CPD80 Switch Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization

CMOD2004

Abstract: 1N3070 CMDD2004 CMLD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au.As - 13,000Å

1N3070

Abstract: DIODE 1N3070 CMDD2004 CMLD2004 CMOD2004 CMPD2003 CMPD2004 CMSD2004 CMXD2004 CPD80V
Contextual Info: Central TM Semiconductor Corp. PROCESS CPD80V Switching Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 7.1 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å

Contextual Info: Central CMOD2004 Semiconductor Corp. SURFACE MOUNT ULTRAmini™ HIGH VOLTAGE SILICON SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOD2004 type is a high voltage silicon switching diode man­ ufactured by the epitaxial planar process, epoxy molded in a ULTRAmini™ surface mount pack­

Contextual Info: Central" CMXD2004 Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004 type contains three 3 Isolated High Voltage Silicon Switching Diodes, manufactured by the epitaxial

marking code pa sot-26

Abstract: marking pa sot-26
Contextual Info: Central CMXD2004TO Semiconductor Corp. SURFACE MOUNT SUPERmini TRIPLE ISOLATED OPPOSING HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMXD2004TO consists of three 3 Isolated High Voltage Silicon Switching Diodes arranged

Marking 1ps sot

Contextual Info: Central CMFD2004Ì Semiconductor Corp. DUAL ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMFD2004i consists of two electrically Isolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is

CMSD2004S

Contextual Info: Central CMSD2004S Semiconductor Corp. SURFACE MOUNT SUPERmini DUAL, SILICON SWITCHING DIODES SERIES CONNECTION DESCRIPTION: The CENTRAL SEMICONDUCTOR CMSD2004S type is a silicon switching dual in series diode manufactured by the epitaxial planar process,

DIODE RL 207

Abstract: LR 207
Contextual Info: Central CMHD2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHD2003 is a Silicon Switching Diode, manufactured by the epitaxial planar process, epoxy molded in a SOD-123 surface mount package, designed for applications requiring high voltage capability.

CP588V

Abstract: CPD76 CPD96 CP-392V CP307 CP188 CP191 CPD48 CPD80 CPD91
Contextual Info: PCN #: 105 Notification Date: 24 November 2004 145 Adams Avenue Hauppauge, New York 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 Mailto: processchange@centralsemi.com http://www.centralsemi.com/processchange Process Change Notice Parts Affected: Small signal discrete semiconductors, wafers, and die in chip form.

c24 diode

Contextual Info: Central' CMDD2004 Semiconductor Corp. SUPERmini SURFACE MOUNT HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMDD2004 type is a high voltage silicon switching diode man­ ufactured by the epitaxial planar process, epoxy molded in a SUPERmini™ surface mount pack­

BF244 datasheet

Abstract: 2N5133 equivalent MPS5771 BD345 BD347 BF244 2n5248 bf256 2N3304 2n5910
Contextual Info: Index Industry Part Number Central Process No. Page # Industry Part Number 1N456 .CPD64 . 216 1N456A.CPD64 . 216 1N457 .CPD64 . 216

SOD-80 Marking Code

Abstract: sod80
Contextual Info: Central' CLL2003 Semiconductor Corp. HIGH VOLTAGE SWITCHING DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL2003 type is a silicon switching diode manufactured by the epitaxial planar process, designed for applica­ tions requiring high voltage capability.

marking code 327 sot23

Abstract: 326 SOT
Contextual Info: Central' CMPD2005S Semiconductor Corp. SURFACE MOUNT DUAL, IN SERIES HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPD2005S contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial planar process, epoxy molded in a

2N2645

Abstract: cpd83v-cmpd7000-ws 1N3070 CPZ25 CPD83V-1N4148-WN CP191V-2N2222A-WN CPZ25-CMZ5937B-WR CPD83V CPD83V-1N4148-WS CPD98V
Contextual Info: PCN #: 119 Notification Date: 16 December 2010 mailto:processchange@centralsemi.com http://www.centralsemi.com/processchange Product / Process Change Notice Parts Affected: Small signal discrete semiconductor wafers. Extent of Change: Wafer diameter has been changed from 4” to 5”.

M140 Blue Laser Diode

Abstract: 12 volt electronic ballast for fluorescent light ledinta0350c425 philips xitanium 150W 1-10V XI040C070V056CNJ1 M140 laser diode t5 94v-0 tv philips
Contextual Info: Lighting Electronics Atlas A Full Line Catalog of LED Drivers, LED Modules, Ballasts and Lighting Controls 2014-2015 Contents Philips Advance LED Drivers Page 1-1 Philips LED Modules Page 2-1 Philips Advance Electronic Fluorescent Ballasts Page 3-1 Philips Advance Electronic Fluorescent Controllable Ballasts

Leviton

Abstract: EL7315A1019 SD4008-120 V2000FAMU avab Designer Series WPC-5721 ZP600FAM120 Occupancy Sensor LP-2800 LITHONIA LEQ
Contextual Info: Advance Dimming Ballasts Control Compatibility Guide Advance Mark X Powerline and Mark VII® 0-10V Dimming Ballasts are Compatible with Controls from 30+ Manufacturers Occupancy Sensors Occupancy sensors automatically turn lights on/off or bring lights to

MARKING CODE R7 DIODE

Abstract: Js MARKING CODE SOT23 Diode marking CODE JS MARKING D53 SOT23 MARKING CODE R7 marking db6 Marking Code js ON MARKING CODE 225
Contextual Info: CMPD2003 CMPD2003C CMPD2003S Central CMPD2004 CMPD2004A CMPD2004C CMPD2004S Semiconductor Corp. DESCRIPTION: SURFACE MOUNT HIGH VOLTAGE SILICON SWITCHING DIODE The Central Semiconductor CMPD2003, CMPD2003C, CMPD2003S, CMPD2004, CMPD2004A, CMPD2004C and CMPD2004S

sot143 114

Contextual Info: Central BAW101 Semiconductor Corp. DUAL, ISOLATED HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR BAW101 consists of two electrically islolated high voltage switching diodes packaged in an epoxy molded SOT-143 surface mount case. This device is

Contextual Info: Typical Electrical Characteristic Curves Page Page Characteristic Curve Index . . CP108 . . CP117 . . CP147 . .

marking code diode ak

Abstract: diode marking code c3
Contextual Info: Central CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO Semiconductor Corp. SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial