CQ 419 Search Results

87S3D

Abstract: HK-1-G
Contextual Info: 06/18/98 10:20 FAI 847 925 0899 TAIYO YUDEN CHICAGO 0019 No. T957F06 SPEC I F I CAT I O N I HIGfl-FKEQUENCY MULTI-LATTER CHIP INDUCTOR HK1608 TYPE SERIES TAIYO YUDEN CQ.LTDDATE: 21. Apr. 1997 T A IY S00003 06/18/98 10:20 FAX 847 925 0899 TAIYO YUDEN CHICAGO

AS8525

Abstract: AS8510 lead acid battery SoC SSOP20 ETR10 D-709 AS8510-ASST TDA 6112 PT100 resistor
Contextual Info: Preliminary Data Sheet AS8510 D a t a A cq u is i t io n D ev ic e f o r B a t t e r y S e n s o r s 1 General Description Two high resolution 16 bit A/D converters with programmable over sampling ratio to enable sampling rates from typically 1kHz to below 1Hz

ITT 2222 A

Abstract: itt 2222
Contextual Info: Si GEC P L E S S E Y APRIL 1997 S E M I C O N D U C T O R S CLA90000 SERIES HIGH DENSITY CMOS GATE ARRAYS INTRODUCTION BENEFITS The CLA90000 family of gate arrays from GEC Plessey Semiconductors GPS consists of 14 fixed-size arrays with the option of building optimized arrays with up to 1.1 million

5BA DIODE

Abstract: C2651 QSFCT651T
Contextual Info: QSFCT651T, 652T, 2651T, 2652T Q High Speed CMOS 8-bit Bus Interface Register Transceivers Q S 5 4 /7 4 F C T 6 5 1 T Q S 5 4 /7 4 F C T 6 5 2 T Q S 5 4 /7 4 F C T 2 6 5 1 T Q S 5 4 /7 4 F C T 2 6 5 2 T F E A T U R E S /B E N E F IT S • Pin and function compatible to the 74F651/2

Contextual Info: ADVANCE |V|IC=RO N 2.5 V V dd, 256K x 18/128K x 36 HSTL, PIPE LINED C L A Y M O R E SRAM MT57V256H18P MT57V128H36P FEATURES • • • • Fast cycle times: 4.4ns, 5ns, 5.5ns, 6ns and 7ns 256K x 18 and 128K x 36 configurations Pipelined operation Single +2.5V ±0.1V power supply Vdd

CQ 419

Abstract: EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: Section III. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II GX devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation

CQ 419

Abstract: EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: Section II. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation

CQ 419

Abstract: CYPRESS CROSS REFERENCE dual port sram EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: Section III. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II GX devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation

CQ 419

Abstract: EP2S15 EP2S180 EP2S30 EP2S60 EP2S90
Contextual Info: Section II. Memory This section provides information on the TriMatrix embedded memory blocks internal to Stratix II devices and the supported external memory interfaces. This section contains the following chapters: Revision History Altera Corporation

CQ 419

Abstract: e9632 CXD1913Q TD10 xcs mp sony 506 cq419
Contextual Info: SONY CXD1 9 1 3 Q Digital Video Encoder I For the avaHaEiTitv of this product, please contact the sales office.I Description The CXD1913Q is a digital video encoder designed for set top box, digital VCRs and other digital video applications. The device accepts ITUR60f compatible Y, Cb, Cr data, and the data are

Xilinx spartan xc3s400_ft256

Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
Contextual Info: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,

TM497BBK32S

Abstract: Q 4.194 304 417400D TM893CBK32 TM893CBK32S
Contextual Info: TM497BBK32, TM497BBK32S 4194 304 BY 32-BIT DYNAMIC RAM MODULE TM893CBK32, TM893CBK32S 8 388 608 BY 32-BIT DYNAMIC RAM MODULE SMMS433-JANUARY1993 Organization TM497BBK32 . . . 4 194 304 x 32 TM893CBK32 . . . 8 388 608 x 32 • Presence Detect • Performance Ranges:

BDP 284

Abstract: BAV 217 Q62702-C2259 BAT 545 Q62702F1240 Q62702-A773 bdp 497 Q62702-C944 Q62702-D339 Q62702-C1529
Contextual Info: SIEMENS List of Types in Alphanumerical Order Type Ordering Code Page BA 582 BA 585 BA 592 BA 595 BA 597 BA 885 BAL 74 BAL 99 BAR 14-01 BAR 15-01 BAR 16-01 BAR 17 BAR 60 BAR 61 BAR 63 BAR 63-03W BAR 63-04 BAR 63-05 BAR 63-06 BAR 64 BAR 64-03W BAR 64-04 BAR 64-05

EP610

Abstract: ep910 programmer TI EP610 EP610-25 EP1810 EP910 ALTERA MAX 5000 programming EP6101-10
Contextual Info: Classic EPLD Family January 1998. ver. 4 Features Data Sheet • ■ ■ ■ ■ ■ ■ ■ ■ ■ Complete device family w ith logic densities of 300 to 900 usable gates see Fable 1 Device erasure and reprogram m ing w ith advanced, non-volatile EPROM configuration elements

RC4195

Abstract: Thermalloy 6560 hp 2212 transistor sec 623 Thermalloy 6403 ierc heatsink 2N4905 RM4195 dual tracking voltage regulator 9 lead TO66
Contextual Info: Raytheon Electronics Sem iconductor D ivision ANALOG R C 4195 Fixed ±15V Dual Tracking Voltage Regulator Features • ±15V operational amplifier power at reduced cost and component density • Thermal shutdown at Tj = +175°C in addition to short circuit protection

MN1610

Abstract: CQ 419 MN1630 MN1640 MN1650 panasonic minas BS12 panasonic cq vt BS05
Contextual Info: MN1610 - ? - o n n y \ í= L — j5> M N 1 6 1 0 1 6 tf- y b 1 6 ~ B it 1 I IS (3 2 § iJ B C h ip M i c r o p r o c e s s o r ( 3 - V o lta g e S u p p ly ) ^ /D e s c r ip tio n M N 16 10 i i , Unit I mm > * >v L O C O S >- ') =1 > r - N -f SaJSw

IC 74LS160

Abstract: 40163B equivalent 40160BC 40161bc D4016 D4016-2
Contextual Info: C D 40160B , C D 4 0 1 6 1 B , C D 40162B , C D 4 0 1 6 3 B T ypes 2 3 H A R R IS CD40160B — Decade with Asynchronous Clear CD40161B — Binary with Asynchronous Clear CD40162B — Decade with Synchronous Clear C D40163B — Binary with Synchronous Clear

Contextual Info: Micro Linear ML541 Read Data Processor GENERAL DESCRIPTION FEATURES The ML541 is a monolithic bipolar integrated circuit for use in a disk drive system to detect analog pulse peaks generated by the recording head during a Read operation. Connected to the read/write amplifier output, it detects valid data and

KC156A

Abstract: ky202e K174XA2 KT809A KT805A KT610B KP350A KT808a KT920A KC213
Contextual Info: BJOJIABPHHEHKO CnPABOMHMK n o n o jiy nPOBOAHMKOBBIM nPMBOPAM H 3A aH ne 1 0 -e, nepepaöoT aH H oe KHEB «TEXHIKA* h flo n o jiH e H H o e 32.852 h2 J113 JlaBpnMenKO B. 10. J113 CnpaBOMHHK no noJiynpoBOAHHKOBbiM npnöopaM. 10-e m a., nepepaô. h A on.— K.: TexHiKa, 1984.— 424 c., hji.— BHÓjniorp.:

Device marking code 1m diode

Abstract: Diode marking CODE 1M Marking Code "1m" diode diode 1M MARKING CODE motorola diode marking code 141WK diode MARKING CODE jx cq 545 SQT-323 MU diode MARKING CODE
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Cathode Silicon Dual Sw itching Diode M1MA141WKT1 M1MA142WKT1 Motorola Preferred D *v lc * This Common Cathode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the

wheel speed sensor using 8051

Abstract: 80 L hall effect sensor ic wheel speed sensor Digital wheel Meter 4921-5U cd 4538 application notes TLE4921-5U AEA01590
Contextual Info: Application Notes 7.1.4 Differential Hall IC TLE4921-5U Applications • • • • Detection of rotational speed of ferromagnetic gear wheels Detection of rotational position Detection of rotational speed of magnetic encoder wheels Generation of trigger signals

NEM085068-28

Abstract: NEM081
Contextual Info: CLASS AB/C, 860 MHz, 28 VOLT MATCHED TRANSISTOR NEM081568-28 NEM085068-28 NEM085068-28 OUTPUT POWER vs. FREQUENCY FEATURES • HIGH PO W ER A N D HIG H G A IN :f = 860 MHz, Class AB • NEM 081568-28: Po>41 dBm, G p>8 dB • NEM 085068-28: Po>46.2 dBm, G p>6.2 dB

Contextual Info: !TELEiYNE COMPONENTS d6£ D • aWbUd OOObStS I, m _ ~7 - s y - / 6 ,- / z . -fj*-TELEDYNE PHILBRICK ERRATA SHEET 4193/95 500NS MAX. 12-BIT A/D CONVERTER REV #1 2/88 2K CODE ON DATA SHEET / PIN DESIGNATIONS: . To read: PIN 6 ANALOGGROUND

65-0014-TR

Contextual Info: SW65-0014 M/A-OOM GaAs SPST Absorptive Switch with ASIC Driver DC - 3.0 GHz SOW-24 Features • Typical Isolation: 45 dB 2,000 MHz • Typical Insertion Loss: 1.5 dB (2,000 MHz) • Integral ASIC TTL/CMOS Driver • Plastic, 50 mil Pitch, SOW-24 Lead, Wide Body