CQFJ 84 Search Results

CQFJ

Abstract: CSOIC hbm 216 LA 7652 PE9354 PE97042 PE9701 PE9309 PE95420 PE9601
Contextual Info: High-Reliability Products May 2010 Peregrine’s High-Reliability UltraCMOS RF IC Portfolio Expands TM New SPDT Switch, Ultra-low Phase Noise PLLs, DSA and Prescalers Lead the Industry Peregrine Semiconductor’s recent advancements on UltraCMOS silicon-on-sapphire technology have enabled

QFN 4x4 mm 20L

Abstract: QUALCOMM QFN CQFJ qualcomm temperature spec rf spdt mhz dbm PE9308 CQFj 44 GSM qualcomm PE3336 PE3341
Contextual Info: 2007 Second Edition Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for

PE42692

Abstract: F QFN 3X3 PE42xx SPDT stacked FET PE42552 03 07 qfn 3x3 flip flap PE3336 PE3341 PE4230
Contextual Info: 2009 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for

Contextual Info: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior

Contextual Info: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior

PE33632

Abstract: PE33362 PE33632 die pe33382 PE42692 PE33362 die PE42510A1 PE4340 PE33631 PE42694
Contextual Info: 2010 Product Selection Guide First Changing how you design RF. Forever. Edition Welcome to Peregrine Semiconductor UltraCMOS : The Green RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for

qualcomm 7500

Abstract: rf spdt mhz dbm 32 pins qfn 5x5 footprint E k m QFN 3X3 F QFN 3X3 PE42692 QUALCOMM Reference design QUALCOMM QFN GSM qualcomm PE3336
Contextual Info: 2008 Product Selection Guide Changing how you design RF. Forever. Welcome to Peregrine Semiconductor UltraCMOS RF Process Technology Peregrine Semiconductor is a leading supplier of high-performance RF CMOS and mixed-signal communications ICs which are ideally suited for

CQFj 44

Abstract: PE83336
Contextual Info: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior

Contextual Info: Product Specification PE83336 3000 MHz UltraCMOS Integer-N PLL For Low Phase Noise Applications Military Operating Temperature Range Product Description Peregrine’s PE83336 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior

Contextual Info: WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE ADVANCED* FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as

WS1M32V-XG3X

Contextual Info: WS1M32V-XG3X White Electronic Designs PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

3d plus

Abstract: CQFJ 84 A12 marking airborn CQFJ 3DSD1280-323H 3D marking
Contextual Info: PRELIMINARY 1.28 Gbit SDRAM ELECTRONICS 3DSD1280-323H 1.28 GBit Synchronous DRAM - Hermetic package Features General Description Organized as 40M x 32-bit. Single +3.3V ±0.3V power supply Two stacks of ten 64 MBit SDRAM mounted on ceramic hermetic package

WS1M32V-XG3X

Contextual Info: WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES n Access Times of 17, 20, 25ns n 3.3 Volt Power Supply n 84 lead, 28mm CQFP, Package 511 n Low Power CMOS n Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8

511S

Abstract: WS1M32-XG3X ah55
Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE PRELIMINARY* FEATURES • Access Time of 70, 85, 100, 120ns ■ TTL Compatible Inputs and Outputs ■ 84 lead, 28mm CQFP, Package 511 ■ 5 Volt Power Supply ■ Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8

WS1M32V-XG3X

Contextual Info: WS1M32V-XG3X HI-RELIABILITY PRODUCT 1Mx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as

WS1M32-XG3X

Contextual Info: White Electronic Designs WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES „ Access Times of 17, 20, 25ns „ Low Power CMOS „ Packaging „ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation „ Weight • 84 lead, 28mm CQFP, Package 511 „ Organized as two banks of 512Kx32, User

WS1M32-XG3X

Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8

WS1M32-XG3X

Contextual Info: White Electronic Designs WS1M32-XG3X PRELIMINARY* 1Mx32 SRAM MODULE FEATURES Access Time of 70, 85, 100, 120ns 5V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8 Weight - WS1M32-XG3X - 20 grams typical

Contextual Info: WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES  Access Times of 17, 20, 25ns  3.3V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8

Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES  Access Times of 17, 20, 25ns  5V Power Supply  Packaging  Low Power CMOS  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation • 84 lead, 28mm CQFP, Package 511

Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES  Access Time of 70, 85, 100, 120ns  5V Power Supply  84 lead, 28mm CQFP, Package 511  Low Power CMOS  Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8  Weight - WS1M32-XG3X - 20 grams typical

Contextual Info: White Electronic Designs WS1M32-XG3X PRELIMINARY* 1Mx32 SRAM MODULE FEATURES Access Time of 70, 85, 100, 120ns 5V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 1Mx16 or 2Mx8 Weight - WS1M32-XG3X - 20 grams typical