CQFJ Search Results

L076B

Contextual Info: M/HITE /M IC R O E LE C TR O N IC S 128Kx32 FLASH MODULE WF128K32-XCJX5 ADVANCED * FEATURES • Acce ss Tim e s o f 90nS to 150nS ■ Packaging ■ Organized as 128Kx32 ■ C o m m e rc ial, In d u strial and M i l i t a r y T e m p e ra tu re Ranges • 6 8-le a d, H erm e tic CQFJ, 2 5.15 mm .990 inch square

acs150

Contextual Info: WE128K32-XG2TXE HI-RELIABILITY PRODUCT 128Kx32 EEPROM MODULE ADVANCED* FEATURES • Access Times of 150, 200, 250, 300ns ■ Packaging: • 68 lead, Hermetic CQFP G2T , 22.4mm (0.880") square, 4.57mm (0.180") high (Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 1)

Contextual Info: WE256K32-XG2TXE HI-RELIABILITY PRODUCT 256Kx32 EEPROM MODULE PRELIMINARY* FEATURES • Access Times of 150, 200, 250, 300ns ■ Packaging: • 68 lead, Hermetic CQFP G2T , 22.4mm (0.880") square, 4.57mm (0.180") high (Package 509). Designed to fit JEDEC 68 lead 0.990" CQFJ footprint (Fig. 1)

Q3236

Abstract: PE9601 PE9601EK 9601-11 96011
Contextual Info: Product Specification PE9601 2200 MHz UltraCMOS Integer-N PLL for Rad Hard Applications Product Description Peregrine’s PE9601 is a high performance integer-N PLL capable of frequency synthesis up to 2200 MHz. The device is designed for superior phase noise performance while

WS512K32-XXX

Contextual Info: WS512K32-XXX / EDI8C32512CA HI-RELIABILITY PRODUCT 512Kx32 SRAM MODULE, SMD 5962-94611 FEATURES • Access Times of 15*, 17, 20, 25, 35, 45, 55ns ■ 5 Volt Power Supply ■ Packaging ■ Low Power CMOS ■ Built-in Decoupling Caps and Multiple Ground Pins for Low

WS1M32V-XG3X

Contextual Info: White Electronic Designs WS1M32V-XG3X PRELIMINARY* 1Mx32 SRAM 3.3V MODULE FEATURES Access Times of 17, 20, 25ns 3.3V Power Supply 84 lead, 28mm CQFP, Package 511 Low Power CMOS Organized as two banks of 512Kx32, User Configurable as 2Mx16 or 4Mx8 Built-in Decoupling Caps and Multiple Ground Pins

Contextual Info: WF512K32-XXX5 512Kx32 5V NOR FLASH MODULE SMD 5962-94612* FEATURES  Access Times of 60, 70, 90, 120, 150ns  Low Power CMOS  Packaging  Embedded Erase and Program Algorithms • 66 pin, PGA Type, 1.075" square, Hermetic Ceramic HIP

Contextual Info: WSF128K16-XXX 128Kx16 SRAM / NOR FLASH MODULE SMD 5962-96900*  Weight FEATURES  Access Times of 35ns (SRAM) and 70ns (FLASH) • WSF128K16-H1X — 13 grams typical • WSF128K16-XG1UX1 — 5 grams typical  Access Times of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: WE32K32-XXX 32Kx32 EEPROM MODULE, SMD 5962-94614 FEATURES  Access Times of 125 and 150ns  Automatic Page Write Operation  MIL-STD-883 Compliant Devices Available  Page Write Cycle Time: 10ms Max  Packaging:  Data Polling for End of Write Detection

Contextual Info: WSF2816-39XX 128Kx16 SRAM / 512Kx16 NOR FLASH MODULE  Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation FEATURES  Access Times of 35ns SRAM and 90ns (FLASH)  Weight:  Packaging • WSF2816-39G2UX - 8 grams typical

Contextual Info: WSF512K16-XXX 512KX16 SRAM / NOR FLASH MODULE SMD 5962-96901* FEATURES FLASH MEMORY FEATURES  Access Times of 35ns (SRAM) and 90ns (FLASH)  100,000 Erase/Program Cycles Minimum  Access Times of 70ns (SRAM) and 120ns (FLASH)  Sector Architecture

Contextual Info: PRODUCT SPECIFICATION PE83335 Military Operating Temperature Range 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE83335 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE83335 makes

Contextual Info: Product Specification PE97632 DIE 3.5 GHz Delta-Sigma modulated Fractional-N Frequency Synthesizer for Low Phase Noise Applications Product Description Peregrine’s PE97632 is a high performance fractional-N PLL capable of frequency synthesis up to 3.5 GHz. The device is

MLP48

Abstract: CQFJ CQFj 44 PE83335EK
Contextual Info: PRELIMINARY SPECIFICATION PE83335 Military Operating Temperature Range 3.0 GHz Integer-N PLL for Low Phase Noise Applications Product Description Peregrine’s PE83335 is a high performance integer-N PLL capable of frequency synthesis up to 3.0 GHz. The superior phase noise performance of the PE83335 makes

WS512K32V-XXX

Contextual Info: WS512K32V-XXX HI-RELIABILITY PRODUCT 512Kx32 SRAM 3.3V MODULE PRELIMINARY* FEATURES • Access Times of 15, 17, 20ns ■ Low Voltage Operation ■ Low Power CMOS ■ Packaging ■ Fully Static Operation: ■ TTL Compatible Inputs and Outputs • 66-pin, PGA Type, 1.075 inch square, Hermetic

WS1M32-XG3X

Contextual Info: WS1M32-XG3X 1Mx32 SRAM MODULE FEATURES • Access Times of 17, 20, 25ns ■ Low Power CMOS ■ 84 lead, 28mm CQFP, Package 511 ■ Built-in Decoupling Caps and Multiple Ground Pins for Low Noise Operation ■ Organized as two banks of 512Kx32, User Configurable as

WS128K32XXX

Contextual Info: WS128K32-XXX / EDI8C32128C HI-RELIABILITY PRODUCT 128Kx32 SRAM MODULE, SMD 5962-93187 & 5962-95595 FEATURES • ■ ■ ■ ■ ■ Access Times of 15, 17, 20, 25, 35, 45, 55ns ■ MIL-STD-883 Compliant Devices Available ■ Packaging Commercial, Industrial and Military Temperature Ranges

Contextual Info: WSF128K32V-XG2TX 128KX32 SRAM/FLASH 3.3V MODULE ADVANCED* FEATURES FLASH MEMORY FEATURES • Access Times of 25ns SRAM and 120ns (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 25ns (SRAM) and 90ns (FLASH) ■ Sector Architecture • 8 equal size sectors of 16K bytes each

S128K32

Abstract: ACT-S128K32 ACT-S128K32V 5962-9559509HMX 5962-9318710H4X
Contextual Info: ACT-S128K32 High Speed 4 Megabit SRAM Multichip Module Features • 4 Low Power CMOS 128K x 8 SRAMs in one MCM ■ Overall configuration as 128K x 32 ■ Input and Output TTL Compatible ■ 17, 20, 25, 35, 45 & 55ns Access Times, 15ns Available by Special Order

Contextual Info: a WHITE /MICROELECTRONICS WSF512K16-XXX 512Kx16SRAM /FLASH MODULE, S M D 5962-96901 FEATURES FLASH M EM ORY FEATURES • A ccess Tim es of 35ns S R A M and 90ns (FLASH) ■ 10,000 E rase/Program Cycles ■ A ccess Tim es of 70ns (SRAM) and 120ns (FLASH)

Contextual Info: VZÀ WHITE /M IC R O E L E C T R O N IC S 128Kx16 SRAM/FLASH MODULE WSF128K16-XXX P R E LIM IN A R Y * FEATURES FLASH MEM ORY FEATURES • Access Times of 35nS SRAM and 70nS (FLASH) ■ 10,000 Erase/Program Cycles ■ Access Times of 70nS (SRAM) and 120nS (FLASH)

Contextual Info: WE32K32-XXX M/HITE /M ICROELECTRONICS 32Kx32 EEPROM MODULE, S M D 5962-94614 FEATURES • A c c e s s T im e s o f 9 0 ,1 2 0 ,1 50ns ■ C o m m ercial, Ind ustrial and M ilita ry Tem perature Ranges ■ M IL-STD -883 Com pliant D e vice s A va ila b le ■ A u to m atic Page W rite Operation