TFK BPW 75
Abstract: TFK 940 TFK 19 001 tfk bpw 77 tfk BPX 28 diode s .* tfk cqy 35 n TFK bpw BPW19 MB28C
Contextual Info: CQY 39 Zehnteilige Galliumarsenid-Lumineszenzdiodenzeile 10 Element GaAs Infrared Emitting Diodes Array Anwendung: Strahlungsquelle im nahen Infrarot-B ereich für Lochstreifenleser Application: Radiation source in near infrared range for tape readers Besondere Merkmale:
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mb-28tfk bpw 75tfk 940tfk 19 001+7tfk bpw 77tfk bpx 28diode s .* tfkcqy 35 ntfk bpwbpw19mb28c
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led 7 segment anode TIL 702
Abstract: trw 007 diodes TDDG 5250 m 817 optron telefunken transistor opto smd code marking NEC TDDG 5250 hoa 865 DIODE PK IN 5401 7segment sm 4150
Contextual Info: CONTENTS Alphanumeric Index 5 Symbol Designation 7 Type Designation Systems — for LEDs — for Displays — for IR-Emitters — for Laser-Diodes — for Optical Switches 8 8 8 8 8 Classification Code for all LEDs and Displays — for LEDs — Displays 9
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10x10led 7 segment anode til 702trw 007 diodestddg 5250 m+7817 optrontelefunken transistoropto smd code marking nectddg 5250hoa 865diode pk in 54017segment sm 4150
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cqx 87
Abstract: germanium AEG Thyristor T 558 F TDA 2516 bu208 bf506 la 4430 BF963 TDA1086 transistor bf 175
Contextual Info: Page Contents Diodes 8 Transistors 15 Optoelectronic Devices 24 Integrated Circuits 33 1 Contents, alpha-numeric Type Page AA 112 AA113 AA117 AA 118 AA119 AA 132 AA 133 AA 134 AA 137 AA 138 12 12 8 12 12 8 8 8 12 12 BA 111 BA 121 BA 124 BA 125 BA 147/. BA 157
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aa113aa117aa119bav17+14bav18bav19bav20bav21cqx 87germaniumaeg thyristor t 558 ftda 2516bu208bf506la 4430bf963tda1086transistor bf 175
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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RPY 86
Abstract: valvo halbleiter RPY94 CQY 24 BV EI 30-20 3001 LDR 03 diode byx 64 600 valvo transistoren KP101A BAV99-1
Contextual Info: Elektronik. Wir bauen die Elemente. v a i v D Halbleiterbauelemente Produktprogramm DH, April 1984 Elektronik. Wir bauen die Elemente Unser Arbeitsgebiet - besonders die Mikroelektronik - entwickelt sich immer rascher zum Motor für eine Vielzahl von Innovationen. Mit gründ
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rpy 86valvo halbleiterrpy94cqy 24+6bv ei 30-20 3001ldr 03diode byx 64 600valvo transistorenkp101abav99-1
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FL 817C
Abstract: K3022P equivalent nec 2561 equivalent 817c moc 3021 and 4n33 TLP 2561 CNY63 TLP 817 PS2001 C817B
Contextual Info: Vishay Telefunken Cross Reference This guide includes a code letter system which designates the compatibility between Vishay Telefunken devices and those of other manufacturers. Code Definitions A Vishay Telefunken’s device is electrically and mechanically equivalent or better
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brt11dt11101106gdt1110g+111123gfl 817ck3022p equivalentnec 2561 equivalent817cmoc 3021 and 4n33tlp 2561cny63tlp 817ps2001c817b
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LDR 03
Abstract: valvo halbleiter LDR -03 cny63 CNY62 BYX 71 800 CXY19 VALVO ldr 07 BZW10-12
Contextual Info: Halbleiter bauelemente • 1981/82 N, Bauelemente l m für die gesamte i f Elektronik V A L V O Valvo bietet das breiteste Produktprogram m an Bauelementen für die gesamte Elektronik in Deutschland: Bildröhren A blenkteile Tuner Lautsprecher Transform atoren
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ldr 03valvo halbleiterldr -03cny63+6cny62byx 71 800cxy19valvoldr 07bzw10-12
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ZPD 5.1 ITT
Abstract: ZPD ITT diode zener ZD 88 germanium BYY32 germanium transistor CJ 4148 ZENER BAW21 ITT ZPD 11 itt germanium diode
Contextual Info: General Information Germanium Gold Bonded Diodes Silicon Diodes Silicon Capacitance Diodes Silicon Diode Switches PIN Diodes Silicon Zener Diodes and Temperature Compensated Stabilizing Circuits Silicon Stabilizer Diodes Light Emitting Diodes Silicon Rectifiers
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f-92223d-7800zpd 5.1 ittzpd itt+8diode zener zd 88germaniumbyy32germanium transistorcj 4148 zenerbaw21itt zpd 11itt germanium diode
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Photo diode TFK S 186 P
Abstract: TFMS 4300 IR diodes TFK S 186 P TFK BPW 41 N diode TFMt 4300 tfmt 4300 ir detector IR diode TFK 186 tfms 4300 n mobile receptor tfm 5380 TFK S 186 P
Contextual Info: Infrared Emitters and Detectors Data Book 1994 TELEFUNKEN Semiconductors TELEFUNKEN Semiconductors Table of Contents General Information 1. Selector guide 11 1.1 1.2 1.3 1.4 1.5 Alpha-numeric index IR emitters Detectors Photomodules IrDA-infrared data transmission
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photo diode tfk s 186 ptfms 4300ir diodes tfk s 186 ptfk bpw 41 n diode+6tfmt 4300tfmt 4300 ir detectorir diode tfk 186tfms 4300 nmobile receptor tfm 5380tfk s 186 p
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Contextual Info: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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tfk 680 cny 707447nbtp-128-400itt tca 700 y+6btp 128 55074151nkatalog cemisfc2741dc4byp250-400tfk 227
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Contextual Info: r9C7 f? *» ? ANALOG ► DEVICES lc 2mos logdac Dual Logarithmic D/A Converter AD7112* FEATURES Dynamic Range: 88.5 dB Resolution: 0.375 dB On-Chip Data Latches for Both DACs Four-Quadrant Multiplication +5 V Operation Pin Compatible with AD7528 Low Power
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BD512 mosfet
Abstract: itt transistoren Relais ITT halbleiterwerk transistor 2N 3055 ITT Intermetall Leuchtdiode CQY 40 transistor BD 522 schaltregler BD512
Contextual Info: VMOS Transistoren Eigenschaften und Schaltungsbeispiele 6240-09-2 D INTERMETALL Halbleiterwerk der Deutsche ITT Industries GmbH VMOS-Transistoren Eigenschaften und Schaltungsbeispiele Zusammengestellt von folgenden Mitarbeitern der ITT Semiconductors Gruppe
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bd512 mosfetitt transistorenrelais itthalbleiterwerk+6transistor 2n 3055itt intermetallleuchtdiode cqy 40transistor bd 522schaltreglerbd512
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VOGT p8
Abstract: tic 2160 triac kaschke fi 270 uaa145 EQUIVALENT UAA145 "direct replacement" TDA1086T telefunken transistor Kaschke Components CQY40 UAA146
Contextual Info: Allgemeines General Seite Page • H I Schaltungen fur Rundfunkempfanger Circuits for radio receivers Seite Page Schaltungen fur die Signalverarbeitung in Fernsehempfangern Circuits for the signal processing in television receivers Seite ■ Page ■ Schaltungen fur Bedienungssysteme in Rundfunk- und
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vogt p8tic 2160 triackaschke fi 270uaa145 equivalent+6uaa145 "direct replacementtda1086ttelefunken transistorkaschke componentscqy40uaa146
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DOX10
Contextual Info: MITSUBISHI INTEGRATED CIRCUIT M65790FP FBTC I MAGE D A T A COMPRESSION and DECOMPRESSION LSI • Easy decision fo r im a g e data m e m o ry ca p a c ity by constant compression ra tio 8/3. • Enoonding, decoding and im age data e diting w ith high speed data processing rate-20M B ps.
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APY12
Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
Contextual Info: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP
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edition-1978ausgabe-1978bs3934so-26+12ot-114ns371apy12byy32ac176aey26bav77bby20bd545bbav27transistor kt 209 maf367
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bzp 650 c10
Abstract: bzp 650 c12 BDP286 C9VI 5t BZP 630 C9V1 bdp 286 BDP 284 BdP 285 BDP 283 BZP 630 C24
Contextual Info: NAUKOWO- PRODUKCYJNE CENTRUM PÓLPRZEWODNIKÓW ELEMENTY PÓLPRZEWODNIKOWE Katalog wyrobów CEMI 1983/1984 C z ç é é I ELEMENTY DYSKRETNE Warszawa 1983 r. SPI S TRECCI Str. Od Wydawcy .
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ntci11tc212ntc220ntc22i+11ntc50ibzp 650 c10bzp 650 c12bdp286c9vi 5tbzp 630 c9v1bdp 286bdp 284bdp 285bdp 283bzp 630 c24
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aeg diode Si 61 L
Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books
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11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Contextual Info: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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zop033zop035zop036zop037+16zop038zop039zop045zop042zop041zop043jrc 45600yd 803 sgs45600 jrctda 7277tda 5072krp power source sps 63602904 jrcsonysha t90 saphilips hfe 4541
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