CRCW12062R20 Search Results

Contextual Info: USER GUIDE | UG:100 PF175 AC-DC Converter Evaluation Board with External Input Filter January 2013 Contents Page Set Up 2 Recommended 4 Hardware Features n Oscilloscope probe jack for output voltage and ripple measurements n Simple to use n Ring lug, screw terminal, and solder connection options

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 C5750Y5V1H226Z AFT18H35 32E17
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 0, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

transistors BC 458

Abstract: BC 458 transistor BC 458 25C1740 A114 A115 AN1955 C101 JESD22 MRF7S21150HR3
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

J717

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 1, 4/2009 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

TRANSISTOR J477

Abstract: TRANSISTOR J477 48 AFT18HW355S C5750Y5V1H226Z
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18HW355S Rev. 1, 1/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous

circuit for flyback transformer driver

Abstract: zener diode 6w
Contextual Info: Application Report SNOA554C – October 2011 – Revised May 2013 AN-2090 LM3448 -120VAC, 6W Isolated Flyback LED Driver .

Contextual Info: USER GUIDE | UG:111 VI Brick AC Front End Evaluation Board November 2012 Contents Page Features n Oscilloscope probe jack for output voltage and ripple measurements Features 1 Introduction 1 Set Up 3 Bill of Materials 5 Recommended 6 Hardware n Simple to use

transistor j307

Abstract: j352 sk063
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to

A114

Abstract: A115 AN1955 C101 JESD22 MRF7S21150HR3 MRF7S21150HSR3 J239 J508 Vishay capacitor axial
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF7S21150H Rev. 0, 11/2007 RF Power Field Effect Transistors MRF7S21150HR3 MRF7S21150HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 2110 to

Zener Diode 3v 400mW

Abstract: reverse phase dimmer dimmer CIRCUITS FET Triac based Lamp Dimmer power control triac inductor noise suppression triac dimmer LED schematic circuit diagram of flyback PFC converter for LED INFINEON TVS diode process PWM circuit dimmer audio transformer calculation
Contextual Info: Texas Instruments Application Note 2090 Steve Solanyk November 8, 2011 Introduction Key Features This demonstration board highlights the performance of a LM3448 based Flyback LED driver solution that can be used to power a single LED string consisting of seven to eleven

transistor j241

Abstract: j241 J241 transistor
Contextual Info: Document Number: A2T07H310-24S Rev. 0, 6/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 47 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 716 to

81A7031-50-5F

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T07D160W04S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 30 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth