SK063 Search Results

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: A2T26H160-24S Rev. 0, 8/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 28 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 2496 to

DEMO-HMPP-389T

Abstract: HMPP-3890 HMPP-3892 HMPP-3895 HMPP-389T HSMP-3880 HSMP-389T pin diodes marking AA Forward Reference Diode
Contextual Info: HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging technology. • Surface mount MiniPak package

transistor j307

Abstract: j352 sk063
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT18H357-24S Rev. 0, 3/2014 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 63 W asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 1805 to

pin diode microstrip

Abstract: 125 diode 63 marking code diode diode led ir diode MARKING CODE 930 marking code 17 surface mount diode pn junction diode structure high power pin diode Microwave PIN diode single power diode package
Contextual Info: HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging technology. Features • Surface mount MiniPak package

C5750X7S2A106KT

Abstract: AFT20P140-4WNR3 aft20p140-4wn aft20p140 TRANSISTOR GF 507 MXc 501
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 0, 4/2013 RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET This 24 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

pin diode

Abstract: DEMO-HMPP-389T HMPP-3890 HMPP-3892 HMPP-3895 HMPP-389T HSMP-3880 HSMP-389T QFN PACKAGE thermal resistance
Contextual Info: HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging technology. • Surface mount MiniPak package

SK063A

Abstract: sk063 DEMO-HMPP-389T HMPP-3890 HMPP-3892 HMPP-3895 HMPP-389T HSMP-3880 HSMP-389T spice hmpp-3892 aplac
Contextual Info: HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Description/Applications Features These ultra-miniature products represent the blending of Avago Technologies’ proven semiconductor and the latest in leadless packaging technology. • Surface mount MiniPak package

Yageo SK

Abstract: SK Series yageo SK025M0220B3F-0811 yageo 470uF SK SK050M1000B7F-1625 SK006M1000B5S-1012 SK450M0033B7F SK016M0010B2F-0511 SK050M0010B2F-0511 SK063M1000
Contextual Info: YAGEO Corporation Date:08/01/2001 Aluminum Electrolytic Capacitors File:2052 Engineering Bulletin for SK Type Page: 1/7 SK Type +85ºC Single-ended lead aluminum electrolytic capacitors for the rated voltage up to 450V

HMPP-3890

Contextual Info: Agilent HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Features • Surface mount MiniPak package – low height, 0.7 mm 0.028" max. – small footprint, 1.75 mm2 (0.0028 inch2) • Better thermal conductivity for higher power dissipation

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 11/2013 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT20P140-4WN Rev. 1, 1/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs This 24 W symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth

HSML-2822

Abstract: varactor diode model in ADS Limiter PIN diode ADS model hsml5822 PIN diode ADS model varactor diode in p-n junction in ads ADS varactor diode hsms2820 limiter zero bias schottky diode 2GHz transistor JSW
Contextual Info: Schottky Enhanced PIN Limiter Compact, low threshold and wideband Application Note 5438 Introduction The sharing of sites or towers by multiple transceivers subjects receiver front-end stages to overload from nonsynchronous transmissions via mutual coupling between

pin diode microstrip

Abstract: HMPP-3890 pin diode pin diode agilent DEMO-HMPP-389T HMPP-3892 HMPP-3895 HMPP-389T HSMP-3880 HSMP-389T
Contextual Info: Agilent HMPP-389x Series MiniPak Surface Mount RF PIN Switch Diodes Data Sheet Features • Surface mount MiniPak package – low height, 0.7 mm 0.028" max. – small footprint, 1.75 mm2 (0.0028 inch2) • Better thermal conductivity for higher power dissipation

IXGP70N33

Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim