CS 661-35 IO 15 Search Results
CS 661-35 IO 15 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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DCL541A01 |
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Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=3:1) / Default Output Logic: Low / Input disable |
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DCL542H01 |
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Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable |
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DCL540C01 |
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Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: Low |
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DCM342H01 |
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Digital Isolator / VDD=3.0~5.5V / 50Mbps / 4 channel(F:R=2:2) / Default Output Logic: High / Output enable / AEC-Q100 |
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DCL540L01 |
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Digital Isolator / VDD=2.25~5.5V / 150Mbps / 4 channel(F:R=4:0) / Default Output Logic: Low / Output enable |
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CS 661-35 IO 15 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: ANALOG DEVICES FEATURES +5 V, ± 5 V Power Supplies Ultralow Power Dissipation <0.5 p,W Low Leakage (<100 pA) Low On Resistance (<50 i l ) Fast Switching Times Low Charge Injection TTL/CM O S Com patible TSSOP Package UtfMOS Precision 5 V Quad SPST Pitches |
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ADG661/ADG662/ADG663 16-Lead RU-16) | |
cd 4440 cs
Abstract: 6 PIN 36AA 496 qh 06ba 24BA 24as am/961273
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SDA-43693-* cd 4440 cs 6 PIN 36AA 496 qh 06ba 24BA 24as am/961273 | |
2duaContextual Info: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode GENERAL DESCRIPTION FEATURES • Performance range: tRAC tCAC tRC K M 44C 4002A /A L/A LL/A S L-5 50ns 13ns 90ns K M 44C 4002A /A L/A LL/A S L-6 60ns 15ns 110ns K M 44C 4002A /A L/A LL/A S L-7 |
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KM44C4002A/AL/ALL/ASL 110ns 130ns 150ns KM44C4002A/AL/ALL/ASL 24-LEAD 300MIL, 400MIL) 2dua | |
Contextual Info: 13 12 10 7 8 -M A K E -F IR S T /B R E A K -L A S T PIN A NOTES: • STANDARD PIN A I HOUSING MATERIAL? A B C "A1 REF. NYLON 6 / 6 , U .L. 9 4 V -2 , COLORs NATURAL. NYLON 6 / 6 , U.L. 9 4 V -0 , COLORs NATURAL. PBT POLYESTER 9 4 V -0 , COLORs BLACK. 2) TERMINAL MATERIALS BRASS, ALLOY 2 6 0 . |
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XQFP044-G-0000-A
Abstract: CXA1156AQ RS-343A CXA1156AO SONY cx 2290C
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CXA1156AQ 400MSPS CXA1156AQ 400MSPS, 400MSPS RS-343A 50MIL) 50MIL XQFP044-G-0000-A CXA1156AO SONY cx 2290C | |
transistor bc 658
Abstract: BUW92 TRANSISTOR bc 657 LB104 2N210 BUW9
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T-33-Ã BUW92 O-218 transistor bc 658 BUW92 TRANSISTOR bc 657 LB104 2N210 BUW9 | |
O72 CN
Abstract: DIN 32 676 LCD dot tlc 711 specifications of ic 1408 LCD 24 segments, 4 commons tlc 711
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SPLD80A5 SPLD80A5, 80-bit SPLD80A5 O72 CN DIN 32 676 LCD dot tlc 711 specifications of ic 1408 LCD 24 segments, 4 commons tlc 711 | |
specifications of ic 1408
Abstract: DIN 32 676
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SPLD80A4 80-CHANNEL SPLD80A4, 80-bit SPLD80A4 specifications of ic 1408 DIN 32 676 | |
Contextual Info: MITSUBISHI LS iS MH16M09ATJ-6,-7/ MH16M09ATJA-6,-7 FAST PAGE MODE 150994944-BIT 16777216-WORD BY 9-BIT DYNAMIC RAM D E SC R IP TIO N The M H 1 6 M 0 9 A T J /A T J A is 167772 16 -w o rd by 9 -b it dynamic RAM and consists o f nine industly standard 1 6 M x |
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MH16M09ATJ-6 MH16M09ATJA-6 150994944-BIT 16777216-WORD 09ATJ-6, 09ATJA-7 72piAM | |
HYM532414
Abstract: HY5117404
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HYM532414 32-bit HY5117404A HYM532414TNG/SLTNG A0-A10) DQ0-DQ31) 1CE13-10-DEC94 YM532414 HY5117404 | |
Contextual Info: KM44C4002A/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Static Column Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C4002A/AL/ALL/ASL is a high speed CMOS 4,194,304 b i t x 4 Dynamic Random Access Memory. Its design is optimized for high |
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KM44C4002A/AL/ALL/ASL KM44C4002A/AL/ALL/ASL 110ns 130ns 150ns 24-LEAD 300MIL, t5h4142 | |
CD 1517
Abstract: CP SPL PL 90 specifications of ic 1408 DO80 P34P SPLD80A4 LCD dot tlc 711
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SPLD80A4 80-Channel CD 1517 CP SPL PL 90 specifications of ic 1408 DO80 P34P SPLD80A4 LCD dot tlc 711 | |
CD 1517
Abstract: specifications of ic 1408 DO80 P34P
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SPLD80A6 80-Channel CD 1517 specifications of ic 1408 DO80 P34P | |
C50UContextual Info: SGS-THOMSON M M § m [lO T « S B U W 92 FAST SWITCHING POWER TRANSISTOR • FAST SWITCHING TIMES ■ LOW SWITCHING LOSSES ■ VERY LOW SATURATION VOLTAGE AND HIGH GAIN TO -218 ABSOLUTE MAXIMUM RATINGS Sym bol P a ra m e te r V a lu e U n it VcEV C o lle cto r-e m itte r V oltage V Be = - 1.5 V |
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Contextual Info: November 1993 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 16820-0101-0121-015 CMOS 2 x I M x 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory |
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576-WORDS MB81116820 SD-08404-03-93-DS | |
9624DC
Abstract: ut 29627
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hi023 100BSC 54BSC 9624DC ut 29627 | |
P227C
Abstract: Amplifier k thermocouple P227G OP-227 OP227GP OP227
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OP-227 80jiV 154dB OP227 P227C Amplifier k thermocouple P227G OP-227 OP227GP | |
HYM536120Contextual Info: -HYUNDAI HYM536120 W-Series 1M x 36-bit CMOS DRAM MODULE DESCraPTION The HYM536120 is a 1M x 36-bit Fast page mode CMOS DRAM module consisting of two HY5118160 in 42/42 pin SOJ and four HY531000A in 20/26 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22j»F decoupling |
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HYM536120 36-bit HY5118160 HY531000A HYM536120W/LW HYM536120WG/LWG DQ0-DQ35) DDGSS34 | |
2IMCContextual Info: 82527 SERIAL COMMUNICATIONS CONTROLLER CONTROLLER AREA NETWORK PROTOCOL Automotive • Supports CAN Specification 2.0 — Standard Data and Remote Frames — Extended Data and Remote Frames ■ Programmable Global Mask — Standard Message Identifier — Extended Message Identifier |
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16-Bit 44-Lead 44-Lof 2IMC | |
Contextual Info: A N A LO G D EVICES LC2M0S Latched 8/16 Channel Analog Multiplexers ADG526A/ADG527A 1.1 Scope. This specification covers the detail requirements of CMOS monolithic analog multiplexers ADG526A and ADG527A with 16 channels and dual 8 channels, respectively. These multiplexers also feature high |
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ADG526A/ADG527A ADG526A ADG527A ADG526AT /883B ADG527AT | |
LT1220Contextual Info: u n m l t c i 4 i ° TECH N O LO G Y 12-Bit, 1.25M sps S a m p lin g A / D C o n v e r te r w ith S h u td o w n F€flTUR€S D C S C M P T IO n • 1.25Msps Sample Rate ■ Power Dissipation: 160mW ■ 71 dB S/ N + D and 82dB THD at Nyquist ■ No Pipeline Delay |
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12-Bit, 25Msps 160mW 15ppm/Â 20MHz 28-Pin 65jjs, 25Msps, 12-bit 160mW LT1220 | |
poly silicon resistor
Abstract: PD43256A Signal Path Designer 630048
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2N3904 poly silicon resistor PD43256A Signal Path Designer 630048 | |
Contextual Info: V E 26417805B , VE46417 805B 2M,4M x 64-Bit Dynamic RAM Module_ vism Description The VE26417805 and VE46417805 are 2M x 64-bit and 4M x 64-bit dual-in-line dynamic RAM modules DIMM . It is mounted by 8/16 pieces of 2M X 8 DRAM (VG26V17805B), and each in a standard 28 pin plastic SOJ packages. The VE26417805 and VE46417805 make |
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26417805B VE46417 64-Bit VE26417805 VE46417805 VG26V17805B) | |
Contextual Info: November 1993 Edition 3.0 FUJITSU DATA SHEET M B 8 1 1 1 6 8 2 0 - 0 1 0/ - 0 1 2 / - 0 1 5 CMOS 2 x 1 M x 8 SYNCHRONOUS DRAM CMOS 2 BANKS OF 1,048,576-WORDS x 8-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81116820 is a CMOS Synchronous Dynamic Random Access Memory |
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576-WORDS MB81116820 FPT-44P-M10) 10T76Ã F44015S-1C-1 374175b |