2N210 Search Results

2n3053A complementary

Abstract: 40362 2N4036 BUX40A 40319 2n4314 2N1893 2N2102 2N2270 2N3053
Contextual Info: THOflSON/ D IS T R IB U T O R SÔE D • =102^073 000572b OflO ■ TCSK Bipolar Power Transistors High-Speed Switching h p E at V c e “ 10V V c E » a t 'V C u rren t - mA T yp e No. v CEO<su9> V vc er (* u ) Pt w V 7W max 2N2102 FA M ILY (n-p-n) 2N697

40409

Abstract: 40361 40317 40314 40323 2n2102 2n697a 40311 40407 40814
Contextual Info: 2N2102 FA M ILY [n-p-n] silicon f r = 120 MHz min; Py = 5 W max V R E (s a t)- V V p p (ia t)- V DESCRIPTION V C E O (sus) 2N TYPES V V V Tem p. -°c Curren t- m A V C E R<»U*) V C E V (sus) 0.01 0.1 10 50 150 - - - 'c 'C B •c 'b mA mA 1.5 150 15 1.3

2N6178

Abstract: 2N6180 2N6181 b0244c npn darlington 400v 15a 2N2102 2N3879 2N4036 2N5320 2N5322
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

3560M

Contextual Info: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

2N2992

Abstract: 23028 2N3016 JANTX2N3440
Contextual Info: Microsemi NPN Transistors Part Num ber NPN 2N4311 2N4305 2N4309 2N2222A 2N1506 2N1613A 2N5011 2N5012 2N5013 2N5014 2N5015 2N5010 2N5092 2N5095 2N5097 2N5098 2N5099 2N3500 2N3501 2N3866 JAN2N3866 JANTX2N3866 JANTXV2N3866 2N1700 2N3016 2N2102 2N2102A 2N2102S

2N2109

Abstract: 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119
Contextual Info: POWER TRANSISTORS TYPE NO. TO-114 PT MAXIMUM RATINGS @ » V ra g g i n ra s i r m « M V V A Watts V <2 tlF E MIN MAX le A Vce V Test Sat Voltages Conditions Ib Imo* V a V be le V V A A ma 2N2109 250 50 50 15 30 10 10 4 1.5 Ì.5 10 T ~ 2N2110 250 100 100 15

Contextual Info: 2N2102 • 2N4036 COMPLEMEMTARY SILICON AF MEDIUM POWER AMPLIFIERS & SWITCHES 1 THE 2N210? NPN AND 2N4056(PNP) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF MEDIUM POWER DRIVERS AND OUTPUTS, AS WELL AS FOR SWITCHING APPLICATIONS. C E B

Contextual Info: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package A MEDIUM POWER DEVICE FOR USE IN AMPLIFIER AND HIGH SPEED NON SATURATING SWITCHES APPLICATION

2N2102A

Contextual Info: TYPES 2N2102, 2N2102A N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 9 4 6 , M A R C H 1 9 7 3 FO R M ED IU M -PO W ER , G E N E R A L PU R PO SE A P P L IC A T IO N S • High Breakdown Voltage Combined with Low Saturation Voltage • hFE • ■ ■ Guaranteed from 10 m A to 1 A

N2219

Abstract: 2N2453 2N2243 Hirel 2N1991 2N1937 2N2060 2N2102 2N2192 2N2192A
Contextual Info: 37E D SEtlELAB l t d 6133167 0000013 0 ISMLB 7=27- 0 / T-Jl-Ol Type No. Reliability Polarity Option Package V^e o ic cont hFE@ VCE/*C *T Pd 2N1937 2N1991 2N2060 2N2102 .2N2192 HI-REL SCREEN HI-REL HI-REL HI-REL NPN PNP PNP NPN NPN T063 T039 T077 T039 T039

2N6178

Abstract: 2N2016 2n3283 Transistor 2n6099 2N6180 RCA 40250 2N6474 JAN 2n5578 2N6177 2N2102
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 2 5 0 M H z . . . I r to 6 0 A . . . P r to 1 4 0 W le * - 1 A MX. P j « 7 W m ax. T O - » • P j “ 10 f t max. (TO -39) ft 30 x 30* 30x30 42x42 2N2102 (N-P-N] 2N4036 [P-N-P] 2N5320 [N-P-N] 2N3053

2N6180

Abstract: 2n3283 2N2102 2N3879 2N4036 2N5320 2N5322 2N6178
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES fT to 250 M H z . . . I r to 6 0 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A M X . P j « 7 W m ax . (T O -» ) • 30 x 30* 3 0x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N2102 TO-39 Metal Can Package Amplifier Transistor ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Ω Collector Emitter Voltage, RBE < 10Ω

2N2102 transistor datasheet

Abstract: 2N2102 P008B
Contextual Info: 2N2102 GENERAL PURPOSE AMPLIFIER AND SWITCH DESCRIPTION The 2N2102 is a silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. It is intended for a wide variety of small-signal and medium power applications in military and industrial equipments.

RCA-2N2102

Abstract: 2n2102 2N1613 2n2102 replacement rca 2n2102 si2666 2n1613 replacement transistors BC 457
Contextual Info: SOLID STATE Dl DE I 3fl7SDÖl H igh Speed Pow er Transistors- 2N1613, 2N2102 Medium-Power Silicon N-P-N Planar Transistors \ y ^ Z7~f? = - 0017007 T File Number 106 TER M IN AL DESIGNATIONS For Small-Signal Applications

Contextual Info: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

RCA 40409

Abstract: rca1a18
Contextual Info: High-Speed-Switching n-p-n and p-n-p Type Selection Charts h V CEO sus V CER <sus) V V C E V F E * » at V (sus) = 10 V Current—mA V V C E ICBO - M A Temp.-°C 0.01 10 50 V 150 1000 500 2N2102 FAMILY (n-p-n) General Purpose, Complementary to 2N4036 Family

2N2102A

Contextual Info: Maximum Ratings Type NPN VcE^Sat @ l c / l b H r e @ *C V CB Volts V CE Volts V EB Volts Cob Min/Max mA Volts mA/mA MHz Min Case pF Max Geometry & Character­ ization Applicable Letter 1000 120 65 7 40/120 150 0.5 150/15 60 15 TO-5 A 2N2102A 1000 120 65 7

Contextual Info: GENERAL SEMICONDUCTOR 3918590 GENERAL TS S E MI CON DU CT OR DE^BilflSiD 95D 02091 7133-07 -r-'ìò-ch Ic = 3.0 AMPS DEVICE TYPE BVce0 PACKAGE VOUS 2N1647 2N1648 2N1649 2N1650 2N2101 TO-111 TO-111 TO-111 TO-111 TO-61 T0-5/S TO-5 T0-5/S TO-5 TO-59 T0-5/S TO-5

2N2102 datasheet

Abstract: 2N2102
Contextual Info: 2N2102 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)

RCA 40250

Abstract: 8350a 8203B Transistors RCA 41013 40250 RCA 8203A rca 383 2N62* rca to3 2n3283 2N4037 RCA
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W ic • 1 A HIM . P f ■ 5 W m ax. T O -3 9 * le * - 1 A MX. P j « 7 W m ax. (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037 ic ■ 2 A m ax.

40375

Abstract: 40327 40363 2N5323 2N3265 power inverter 140w dc to ac 2N2102 2N3879 2N4036 2N5320
Contextual Info: HIGH-SPEED SWITCHING N-P-N & P-N-P POWER TYPES f T to 250 MHz . . . I r to 60 A . . . P r to 140 W i c • 1 A H IM . P f ■ 5 W m ax. T O -3 9 * l e * - 1 A MX. P j « 7 W m ax . (T O -» ) • 30 x 30* 30x30 2N2102 (N-P-N] 2N4036 [P-N-P] 2N3053 2N4037

JANTX2N5109

Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
Contextual Info: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001