CT 10 SOT143 Search Results

MARKING EA1 sot-23

Abstract: SOT-23 EA1 sot-23 MARKING GU GY SOT-23 RF1 marking limiter diode APD0520-000 marking GD DMJ3952-020 EA1 sot-23 MARKING EA1
Contextual Info: Diodes LIMITER DIODES Plastic Packaged Silicon Limiter Diodes Part Number VB IR = 10 µA V CT (pF) 0 V, F = 1 MHz CT (pF) 0 V F = 1 GHz RS IF = 10 mA Ω) F = 100 MHz (Ω Carrier Lifetime TL (ns) IF = 10 mA Package SMP1330 Series 20–50 0.7 Typ., 1.0 Max.

transistor L44

Abstract: chip die npn transistor ma4t856 l44 transistor npn C 1740
Contextual Info: V a n A M P ct o m p a n y Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm PidB @ 1 GHz - 10 dBm PldB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fx • High Power Gain - IS21EI2 = 15 dB @ 1 GHz

SOT23 6 PA

Abstract: om sot23-5 SOT23 JE pa sot23-5 sot23-6 pa JE SOT23
Contextual Info: ADVANCE INFORMATION All inform ation in this data sheet is prelim inary and su b je ct to change. , V M X X iy M VHF-to-M icrow ave +3V, Low-Noise A m plifiers 10/96 _ G eneraI Description The M A X 2 6 3 0 /M A X 2 6 3 1/M A X 2632/M A X 2633 are lowv o lta g e , lo w -n o is e a m p lifie r s fo r use fro m VH F to

BAT17-07

Abstract: VPS05178
Contextual Info: BAT17-07 Silicon Schottky Diode 3
For mixer applications in the VHF / UHF range
For high-speed switching applications 4 2 1 VPS05178 4 1 3 2 EHA07008 Type Marking BAT17-07 57s Pin Configuration 1 = C1 2 = C2 3 = A2 Package 4 = A1 SOT143 Maximum Ratings

a3 sot143

Abstract: BAR60 BAR61 VPS05178 MARKING 61s
Contextual Info: BAR60, BAR61 Silicon PIN Diodes 3
RF switch, RF attenuator for frequencies above 10 MHz 4 2 BAR60 BAR61 1 1 3 4 1 VPS05178 3 EHA07013 2 4 EHA07014 2 Type Marking Pin Configuration Package BAR60 60s 1=C1/A2/C3 2 = C2 3 = A3 4 = A1 SOT143 BAR61 61s 1=C2/C3

Contextual Info: BAW101. Silicon Switching Diode
Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

BAW101

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

BFQ65

Abstract: BFQ67 X3A-BFQ65 BFG67
Contextual Info: P h ilip s Sem icon d u ctors Produ ct specification -T=3i-so NPN 8 GHz wideband transistor crystal PHILIPS INTERNATIONAL SbE D X3A-BFQ65 • 71106Sfc. QOHbCHb S'lb « P H I N M E C H A N IC A L DATA DESCRIPTION NPN crystal used in BFQ 65 SOT37 , BFG67 (SOT143)

IEC-134

Abstract: BFR540 transistor d 1264 BFG541 X3A-BFR540 BFG540 IEC134
Contextual Info: P h ilip s Sem icon d u ctora P rodu ct sp ecification NPN 9 GHz wideband transistor crystal PHILIPS INTERNATIONAL ^ 3 SbE D DESCRIPTION BCDC>,n A3A-BFR540 m TllDfiEb OOMblD? ITI • PHIN M E C H A N IC A L DATA NPN crystal used in BFR540 SOT23 , BFG540 (SOT143) and BFG541 (SOT223). Crystals are supplied

BFG520

Abstract: X3A-BFR520 SOT173 BFP520 BFR520 SOT-173
Contextual Info: P h ilip s S em icon du ctors Produ ct specification •T'3 1-9-0 NPN 9 GHz wideband transistor crystal X3A-BFR520 StE » PHILIPS INTERNATIONAL DESCRIPTION 711DfiEb DDMblOb 2b5 M E C H A N IC A L DATA NPN crystal used in BFR520 SOT23 , BFG520 (SOT143) and BFP520 (SOT173). Crystals are supplied

marking JTs

Abstract: BAS28 BAS28W
Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 4 3 D 1 1 D 2 2 Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Value

Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! ,  ,  Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified

sot143 marking code u1s

Abstract: BFP181 BGX50A E6327
Contextual Info: BGX50A. Silicon Switching Diode Array
Bridge configuration
High-speed switching diode chip BGX50A 4 3 D 3 D 4 D 2 D 1 1 2 Type BGX50A Package SOT143 Configuration bridge Marking U1s Maximum Ratings at TA = 25°C, unless otherwise specified Parameter

BAW101

Abstract: BFP181
Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes BAW101 " ! ,  ,  Type BAW101 Package SOT143 Configuration parallel Marking JPs Maximum Ratings at TA = 25°C, unless otherwise specified Parameter Symbol Diode reverse voltage

BAW101

Abstract: BFP181
Contextual Info: BAW101. Silicon Switching Diode • Electrically insulated high-voltage medium-speed diodes • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BAW101 " ! ,  ,  Type Package Configuration Marking BAW101 SOT143 parallel JPs Maximum Ratings at TA = 25°C, unless otherwise specified

BAS28

Contextual Info: BAS28. Silicon Switching Diode
For high-speed switching applications
Electrical insulated diodes BAS28/W 4 3 D 1 D 2 1 2 Type BAS28 BAS28W Package SOT143 SOT343 Configuration parallel pair parallel pair Marking JTs JTs Maximum Ratings at TA = 25°C, unless otherwise specified

Contextual Info: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , ,   Type BGX50A Package SOT143 Configuration bridge Marking

Diode BGX50A

Abstract: sot143 marking code u1s BFP181 Marking code U1s BGX50A
Contextual Info: BGX50A. Silicon Switching Diode Array • Bridge configuration • High-speed switching diode chip • Pb-free RoHS compliant package 1) • Qualified according AEC Q101 BGX50A " ! , ! , " , ,   Type BGX50A Package SOT143 Configuration bridge Marking

LNA ku-band

Abstract: ku-band pll lnb AT-64020 microwave transmitter 10GHz MGA-725M4 micro-X ceramic Package lna fet gaas fet 70 mil micro-X Package HSMS-2850 HSCH-9401 900-1700MHz
Contextual Info: Semiconductor Wireless Applications and Selection Guides System Block Diagrams and Product Suggestions Wireless Infrastructure 2 Basestation Radiocard 2 Basestation Low Noise Amplifier LNA 3 Basestation Tower Mounted Amplifier (TMA) 3 Basestation Multi-carrier Power Amplifier (MCPA)

IR 1838 3v

Abstract: SMV1146-001 SMV1141-011
Contextual Info: Frequency Linear Hyperabrupt Tuning Varactors SMV1141 to SMV1148 Features • Increasing Gamma Design for Improved Linearity ■ Low Inductance Surface Mount SOD-323 and SOT-23 Packages ■ Specified Low RS ■ Designed for High Volume, Low Cost Applications

SMV1299-001

Abstract: SMV1228-001 SMV1421-001 SMV1206-011 SMV1222-001 SMV1225-001 SMV1206-001 SMV1229-001 SMV125 SMV1223
Contextual Info: Plastic Packaged Surface Mount Varactor Diodes EBAlpha Features Industry Standard Outlines: SOD-323 and SOT-23 Packages High “Q” Abrupt and Hyperabrupt Junction Designs Single, Common Anode and Common Cathode Configurations Available for 3 Volt Battery Operated Circuits