CT40TMH Search Results

STROBE FLASHER USE IGBT

Abstract: strobe IGBT CT40TMH-8 1200HF
Contextual Info: MITSUBISHI INSULATED GATE BIPOLARTRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. R jJÊÊk m Q w . ^ q GATE w COLLECTOR e EMITTER ' r V c e s . 400V

STROBE FLASHER USE IGBT

Abstract: strobe trigger CT40TMH-8
Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE CT40TMH-8 OUTLINE DRAWING Dimensions in mm 10.5MAX. 2.8 17 8.5 5.0 1.2 5.2 1.3MAX. 3.8MAX. 0.8 2.54 0.5 2.54 2.6 4.7MAX. 13.5MIN. φ 3.2 q w e w q GATE w COLLECTOR e EMITTER q ¡VCES . 400V

Contextual Info: MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT40TMH-8 STROBE FLASHER USE OUTLINE DRAWING Dimensions in mm 10.5MAX. 28 k- fi 1 GATE COLLECTOR EMITTER I TO-220F APPLICATION Strobe Flasher. MAXIMUM RATINGS Sym bol Tc = 25 C Param eter Conditions Ratings Unit

CT40TMH-8

Abstract: STROBE FLASHER USE IGBT
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

FS10KM12

Abstract: FS10SM16A FS20KM-5 FS10SM18A FS7UM16A FS18SM10 CT40TMH FS7UM-16A FX6KM-06 CT60AM-20
Contextual Info: HMcnor Q lliC k Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 Reference Guide Discrete IGBTs Strobe Flash Applications Product Features: □ Guaranteed Flash Life □ High Peak Current Capability □ Compact Package □ Specified Capacitor Ratings

CT40TMH-8

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 ShOTt FOfTTI D 3Î3 Selector Guide Discrete IGBTs 3rd Generation IGBT Maximum Ratings, Tc =:25°C Device Electrical Characteristics VcE(SAT), (V) Max. Typ- tf(max) (|iS ) 3.0

CT-30sm-12

Abstract: TQ-220F
Contextual Info: • IGBT FOR STROBO FLASHER Max. ratings Type No. V •on A} Vÿfft - - “ 400 130 40 10 ±0.1 7.0 400 130 40 10 ±0.1 7.0 TQ-220F 400 130 40 10 ±0.1 7.0 TO-HOiFin-eut! 400 130 40 10 ±0.1 400 130 16 10 ±0.1 4.0 400 130 16 10 ±0.1 2.0 TO-220|F¡n-cul¡

1002ds

Abstract: 4008ZB 2SC 9012 MP 1009 es 2SC 8050 20AAJ-8H 6020v4 2SC1417 2SC 8550 cr3as
Contextual Info: 2004.4 Renesas Transistors/Thyristors/Triacs Status List Topic—CMFPAK-6 Series of Power MOS FETs for Portable Devices •·······················································2 Index ······················································································3 to 5

TO-220C

Abstract: CT60AM-20
Contextual Info: mtmx Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FOTITI D s t3 Selector Guide Discrete IGBTs 3rd Generation IGBT Maximum Ratings, Tc = 25°C Device Number Applications Electrical Characteristics V CE(SAT), (V)