CUREENT Search Results

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use NPN Epitaxial Silicon

D09-15

Abstract: w1300 diode D09-15
Contextual Info: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications

DIODE D29 -08

Abstract: D29-02 D29 -08 CUREENT d29 08 DIODE erD29 08 D2902 DIODE D29 Diode d29 08 ERD29
Contextual Info: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features Marking Large cureent High voltage by mesa design Color code : Green Abridged type name Voltage class Applications Absolute maximum ratings Average forward current

to92l

Abstract: CSD1207 Continental Device India
Contextual Info: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Manufacturer NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1207 TO-92L Plastic Package High Cureent Switching Applications Complementary CSB892 ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL

DIODE D29 -08

Abstract: DIODE D29 D29 -08 D29-02 fast recovery diode 600v 5A ERD29
Contextual Info: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Green D29-02 High reliability Abridged type name Voltage class Applications

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# TIP112 Features • • • High DC Cureent Gain: hFE=1000 @ VCE=4.0V, IC=1.0A Low Collector-Emitter Saturation Voltage Industrial Use Equivalent Circuit

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS L ID . BC847 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR G EN ER A L PU R PO SE T R A N SIST O R ABSOLUTE MAXIMUM RATINGS at Tan*=2$ C Symbol Vcbo Rating Unit 50 V Vceo Vebo 45 6 V V Collector Cureent Collector Dissipation

U280

Abstract: CSD1207
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSD1207 TO-92L Plastic Package High Cureent Switching Applications Complementary CSB892 ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VCBO

CD1207

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CD1207 TO-92L Plastic Package High Cureent Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VCBO VALUE UNITS

D09-15

Abstract: diode D09-15 d0915 d09.15 ERD09
Contextual Info: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features Marking Large cureent High voltage by mesa design Color code : Blue Abridged type name Voltage class Applications Absolute maximum ratings Average forward current

DIODE D29 -08

Abstract: D29-02 DIODE D29 d29 08 D29 -08
Contextual Info: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Green D29-02 High reliability Abridged type name Voltage class Applications

CD1207

Abstract: TO-92L
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CD1207 TO-92L Plastic Package High Cureent Switching Applications ABSOLUTE MAXIMUM RATINGS Ta=25ºC SYMBOL VCBO VALUE UNITS

Contextual Info: HD74HC32 # Quad. 2-input OR Gates • FEATURES I PIN ARRANGEMENT • High Speed Operation: 1^ * = 10ns typ. C/_ =50pF • • • • High Output Current: Fanout of 10 LSTT L Loads Wide Operating Voltage: V'cc=2~6V Low Input Current: 1jiA max. Low Quiescent Supply Cureent: Icc (static) * 1mA max. (7a”25°C)

D09-15

Abstract: diode D09-15 D09.15 diodes CUREENT erd09 d09.15
Contextual Info: ERD09 3.0A ( 1300 to 1500V / 3.0A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Blue D09-15 High reliability Abridged type name Voltage class Applications

DIODE D29 -08

Abstract: D29 -08 D29-02 d29 08 ERD29 uA105
Contextual Info: ERD29 2.5A ( 200 to 600V / 2.5A ) Outline drawings, mm FAST RECOVERY DIODE ø 7.5 ø 1.8 10 25 MIN. Features 25 MIN. Marking Large cureent High voltage by mesa design Color code : Green D29-02 High reliability Abridged type name Voltage class Applications

74LS169BN

Abstract: 74S169
Contextual Info: TYPES SN54LS169B, SN54S168, SN54S169, SN74LS169B, SN74S168, SN74S169 SYNCHRONOUS 4-BIT UP/DOWN COUNTERS OCTOBER 1976 —REVISED MAY 1983 S168 . . . SYNCHRONOUS UP/DOW N DECADE COUNTERS 'LS169B, 'S169 . . . SYNCHRONOUS UP/DO W N BINARY COUNTERS SN 54S 168, 5N 54LS169B, S N 54S 169 . . . J OB W PACKAGE

driver injectors

Abstract: high side gate driver GTO FAN7083
Contextual Info: FAN7083_GF085 High Side Gate Driver with Reset Features Description • Qualified to AEC Q100 The FAN7083_GF085 is a high-side gate drive IC with reset input. It is designed for high voltage and high speed driving of MOSFET or IGBT, which operates up to 600V. Fairchild's highvoltage process and common-mode noise cancellation technique provide stable operation in the high side driver under

MACH465

Abstract: 85C30 MACH465-12 EZ-030 AM29030 D1667 29030 27C010 MACH220 MAX232
Contextual Info: Using a PC I Bus as the I /O Bus on an Am29030/040 M icroprocessor Design Application Note This application note describes how the Peripheral Component Interconnect (PCI) bus can be used as the I/O bus portion on a two-bus microcontroller design. Additionally, one

Contextual Info: UCC28050, UCC28051 UCC38050, UCC38051 SLUS515C−SEPTEMBER 2002 − REVISED DECEMBER 2004 TRANSITION MODE PFC CONTROLLER FEATURES D Transition Mode PFC Controller for Low D D D D D D D D D APPLICATIONS D Switch-Mode Power Supplies for Desktops, Implementation Cost

SMD W2f sot23

Abstract: SOT-23 marking w2f W2f 01
Contextual Info: Transistors SMD Type Product specification KMBT2907 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power Dissipation :PD=250mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector Current to Continuous :IC= -600mA 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1

Contextual Info: MMBT2907AW PNP General Purpose Transistors COLLECTOR 3 * “G” Lead Pb -Free 3 1 BASE 1 2 2 EMITTER SOT-323(SC-70) MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current-Continuous Value -60 -60 -5.0

Contextual Info: WSD421 WSD425 Surface Mount Schottky Barrier Diode * “G” Lead Pb -Free SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208

Contextual Info: WSD421 WSD425 Surface Mount Schottky Barrier Diode * “G” Lead Pb -Free SCHOTTKY BARRIER RECTIFIERS 100mAMPERES 40VOLTS Features: *High Reliability *Low Voltage *Small Surface Mounting Type Mechanical Data: 3 *Case : Molded Plastic *Terminals : Solderable per MIL-STD-202,Method 208

Contextual Info: MG600J1US51 TOSHIBA M G 6 0 0 J 1 US51 TOSHIBA GTR M O DU LE SILICON N CHANNEL IGBT HIGH POWER SW ITCHING APPLICATIONS. M O TO R CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. High Input Impedance Enhancement-Mode High Speed : ^ = 0 .3 0 /^ Max. (I0 = 6OOA)