CVG7965 Search Results

Contextual Info: CVG7965-05 Diodes Varactor Diode Military/High-RelN Ct{Cj} Nom. F Junction Cap.1.5p C1/C2 Min. Capacitance Ratio8.5 V(RRM)(V) Rep.Pk.Rev. Voltage20 Q Factor Min.3.0k f(co) Min. (Hz) Cut-off freq. P(D) Max. (W)250m Semiconductor MaterialGaAs Package StyleBeam Lead

C22V

Abstract: CVG7965-01 CVG7965-02 CVG7965-03 CVG7965-04 CVG7965-05 CVG7965-06 CVG7965-07 varactor alpha
Contextual Info: Beam-Lead GaAs Hyperabrupt Tuning Diodes ALPHA IN D / SEniCONDUCTOR 4ÔE D • 0365443 'T‘-CsTM ! 0001332 b35 ■ ALP Features ■ ■ ■ ■ ■ Description Constant Gamma Over a Wide Tuning Range Low Parasitic Capacitance and Inductance HighQ Strong Beam-Lead Construction

constant current diodes

Contextual Info: Beam-Lead GaAs Hyperabrupt Tuning Diodes Features • ■ ■ ■ ■ Constant Gamma Over a Wide Tuning Range Low Parasitic Capacitance and Inductance High Q Strong Beam-Lead Construction Stable Performance in High-Rel Environment X Description Absolute Maximum Ratings

Microwave Diode

Abstract: DVH6740 1035G
Contextual Info: Silicon and GaAs Tuning Diodes In general, high capacitance tuning diodes either abrupt or hyperabrupt are characterized by low Q’s, which limit them to operation below microwave frequen­ cies. The following is a rough guide for the design engineer. Please consult the factory for more detailed