CW 003 RX Search Results

Contextual Info: Sch em atic: H 1CT:1CT 6 o RJ45 TX 4 O5 O- RX 2 O3 O1 O- Shld 1CT:1 CT > 10 o11 ^ Left LED R1 < R2 Right LED ch- 12 o- R3 R4 T ± 1000pF XFATM9T— CTxul — 4M L. 2KV .J Ò 8 R1.R2.R3.R4: 75 OHMS E lectrical S p ecification s: 25°C Isolation Voltage: 1500 Vrms Input to Output

Contextual Info: 7 this îiwi» IS UWUU5WJ. REV PEfl EC 0350-136-97 REV PER EC 0330-35-97 T. A A ir.I OlBIBIBlEl^^ f ',5<rx •CIRCUIT CAVITY NO. T A P. C. R ECEPTACLE ACCEPTS AN .0 0 9 -.0 1 4 THK. I.C . LEAD. TWO . 0 0 0 0 3 0 M I N .T H K .G O L D S T R I P E S IN CO NTA C T

Agilent RF amp

Contextual Info: Agilent E6501A, E6502A, E6503A VXI Receivers Data Sheet E6501A Receiver E6503A Receiver E6502A Receiver 1 GHz VXI IF Processor VXI VXI VXI VXI 1 GHz VXI VXI LO VXI VXI Option 003 3 GHz VXI 3 GHz VXI IF Processor 1 GHz VXI 1 GHz Option 003 LO VXI LO VXI 3 GHz

C0MB01-4S

Contextual Info: Sch em atic: r .j E lectrical Sp ecificatio n s: 25°C Isolation Voltage: 1500 Vrms Input to Output Isolation Voltage: 500 Vrms (P 1 + 2 + 3 to P 4 + 5 + 6 ) Turns Ratio: TX 1CT:1CT ±3% RX 1CT:1CT ±3% CABLE SIDE OCL: 350uH Minimum @100KHz 100mV 8mADC

RJ45 CONNECTOR jack with transformer

Abstract: Shielded RJ45 Jack
Contextual Info: MODULAR JACK CONNECTORS MAXCONN MJFS Series Filtered Transformer, Shielded, Standard PCB Footprint Performance Specifications Materials and Finish Housing: Glass filled polyester, UL 94V-0 rated, high-temp.,black Contacts: 0.35mm Phosphor bronze C5210 Contact Plating: Palladium nickel 50 microinch

TDA 0200

Abstract: PCB- 94v-0 schematic diagram
Contextual Info: MODULAR JACK CONNECTORS MAXCONN A MEMBER OF THE ERNI GROUP MJFS Series Filtered Transformer, Shielded, Standard PCB Footprint Performance Specifications Materials and Finish Housing: Glass filled polyester, UL 94V-0 rated, high-temp.,black Contacts: 0.35mm Phosphor bronze C5210

Contextual Info: S chem atic: I 1 .J E lectrical S p e c i f i c a t i o n s : @25°C Isolation Voltage: 1500 V rm s Input to Output Isolation Voltage: 500 Vrm s (P 1 + 2 + 3 to P 4 + 5 + 6 ) Turns Ratio: TX 1CT:1CT ±3% RX 1CT: 1CT ±3% CABLE SIDE OCL: 350uH Minimum 100KHz 10OmV 8mADC

Contextual Info: S ch em atic: E le c tric a l S p ec ific a tio n s: 25°C ISOLATION VOLTAGE: 1500Vrms Input to Output TURNS RATIO: TX 1CT:1CT±3%, RX 1CT:1CT±3% CABLE SIDE OCL: 350uH Minimum @100KHz 100mV 8mADC CW/W: 27pF Typ 100KHz 100mV (Input to Output) CABLE SIDE LL: 0.3uH Max @1MHz 100mV, Short Output

ATM60-A4A12X12

Abstract: ATM60-A4M12X12 ATM60-A4K12X12 ISO 2768-mk ATM60-A4L12X12 "ISO 2768-mK" ISO 2768 mk GMS-20 ISO 2768-mk tolerances stegman
Contextual Info: Absolute Encoder Multiturn ATM 60 SSI, face mount flange Resolution up to 26 bits Dimensional drawing face mount flange, connector radial Absolute Encoder Multiturn Extremely robust SSI and RS 422 configuration interface Electronically adjustable, resolution adjustable

Contextual Info: Sch em atic: n i RJ45 1 CT:1 CT 4 O J8 J7 J3 J5 J4 J6 J1 J2 Shld RX 6 O- 5 O1 O- TX 2^ 3 O- 1CT:1CT 12 oLeft LED . R1 S R 2 11 ° — 9 o- , R3 <R4 d= 1000pF 2KV Right LED I 2 50 0 / 10 o XFATM9UA—CTZxul —4M j_< .J 8 R1 ,R2,R3,R4: 75 OHMS E lectrical

RF 433 RR3

Abstract: nr15 RT4 RR3 RF 433 RT6 RF transmitter 433.92 RR3 433 MHz receiver modul 3 pin PLL FSK DEMODULATOR RF transmitter 433.92 RT3 Rt3 433 transmitter RR3 433.92
Contextual Info: TH7121 300 to 930MHz FSK/FM/ASK Transceiver Features ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! ! Single chip solution with only a few external components Stand-alone fixed-frequency transceiver operation modes Programmable multi-channel transceiver operation modes Low current consumption in active mode and very low standby current

Contextual Info: SP2T PIN Diode Switches MSW2010-201 & MSW2011-201 Series Datasheet Features • Wide Frequency Range: 50 MHz to 4 GHz, in 2 bands • SP2T PIN Diode Switches in Compact Outline: 8 mm L x 5 mm W x 2.5 mm H • Higher Average Power Handling than • Plastic Packaged MMIC Switches: 100 W CW

Contextual Info: SP2T PIN Diode Switches MSW2010-201 & MSW2011-201 Series Datasheet Features • Wide Frequency Range: 50 MHz to 4 GHz, in 2 bands • SP2T PIN Diode Switches in Compact Outline: 8 mm L x 5 mm W x 2.5 mm H • Higher Average Power Handling than • Plastic Packaged MMIC Switches: 100 W CW

MLX80030

Abstract: Melexis LIN Slave ICs TWD 1117 smd diode 1208 MLX80050 SMD resistors 10K
Contextual Info: MLX80050/51/30/31 LIN System Basis ICs Features 1 8 EN LIN 2.x / SAE J2602 compliant MLX80030/50 5 GND 3 Operating voltage VSUP = 5 . 18 V 3 modes: Normal, Silent and Sleep 5 LIN 4 Linear low drop voltage regulator: MLX80030/31: • Normal mode 3.3V/70mA ±2%

Contextual Info: LAN Components 10 Base 16 Pin SMD Small Size ctparts.com Not shown at actual size. RoHS Compliant APPLICATIONS 16 Pin, SMD package to compliant with IEEE 802.3 standard. Model is available to interface with 10 Base-T transceivers. Compatible with IR oven processes.

st7010

Abstract: 68023F CT-ST7010F ST4202T
Contextual Info: LAN Components 10 Base 16 Pin SMD Small Size ctparts.com Not shown at actual size. RoHS Compliant APPLICATIONS 16 Pin, SMD package to compliant with IEEE 802.3 standard. Model is available to interface with 10 Base-T transceivers. Compatible with IR oven processes.

Contextual Info: MXG X-Series Signal Generators N5181B Analog & N5182B Vector 9 kHz to 3 or 6 GHz Data Sheet Table of Contents Pure and precise On the path to better performance, the new MXG X-Series signal generators are fine-tuned to be your “golden transmitter” in R&D.

matlab ask fsk psk coherent

Contextual Info: MXG X-Series Signal Generators N5181B Analog & N5182B Vector 9 kHz to 3 or 6 GHz Data Sheet Table of Contents Pure and precise On the path to better performance, the new MXG X-Series signal generators are fine-tuned to be your “golden transmitter” in R&D.

Shielded RJ45 Jack

Abstract: 8 pin RJ45 to odb 2
Contextual Info: MODULAR JACK CONNECTORS MAXCONN MJ FS Series Filtered Transformer, Shielded, Standard PCB Footprint Perform ance Specifications M a t e r i a l s a n d Fi ni sh Housing: Glass filled polyester, U L94V-0 rated, black Contacts: 0.35mm Phosphor bronze Shielding: 0.25mm thickness copper alloy plated with 90 microinch tin

ALC 653

Abstract: APCO25 hcpm
Contextual Info: EXG X-Series Signal Generators N5171B Analog & N5172B Vector 9 kHz to 1, 3, or 6 GHz Data Sheet Table of Contents Optimized for manufacturing On the path to faster throughput and greater uptime, the costeffective EXG X-Series signal generators are optimized for

PC MOTHERBOARD ibm rev 1.5 SERVICE MANUAL free

Abstract: PC MOTHERBOARD ibm rev 1.2 SERVICE MANUAL free PC MOTHERBOARD ibm rev 1.3 SERVICE MANUAL free PC MOTHERBOARD ibm rev 3.2 SERVICE MANUAL free PC MOTHERBOARD ibm rev 1.6 SERVICE MANUAL free PC MOTHERBOARD ibm rev 2.1 SERVICE MANUAL free tl082p db25 female socket PC MOTHERBOARD ibm rev 1.8 SERVICE MANUAL free EV9000
Contextual Info: CML Semiconductor Products Evaluation Kit User Manual EV9000 UM9000/1 July 1997 Advance Information FX909A, FX919B, FX929B Modem Evaluation Kit  1997 Consumer Microcircuits Limited Evaluation Kit User Manual EV9000 USER MANUAL CONTENTS Section Page 1.0 GENERAL INFORMATION . 4

valox 553

Abstract: 4-40NC-2B S227 s-100 bus CK 66 UL 94V-0 S563 037m a72t S453
Contextual Info: General Specifications MATERIALS Insulator: Blue glass filled thermopalstic polyester Valox UL 94V -0 Approved; Green glass filled ployphenylene sulfide Ryton UL 94V -0 Approved; Natural brown polyetheretherketone Peek UL 94V -0 Approved; Other materials available.

Contextual Info: People are said to get more than seventy percent of their information about our world from their eyes. However, there are vast sums of information and unknown possibilities hidden within light not visible to the naked eye. This kind of light includes ultraviolet, infrared, X-ray and ultra-low level light

cdi schematics pcb

Abstract: IT28 it27 ac cdi schematic diagram cdi schematic cdi schematics F2152 I960 RF2152
Contextual Info: RF RF2152 Preliminary M ICRO-DEVICES POWER AMPLIFIERS DU AL-M O D E CD M A /A M PS OR TD M A /A M P S 3 V POWER A M P L IF IE R manufactured on an advanced Gallium Arsenide Hetero­ junction Bipolar Transistor HBT process, and has been designed for use as the final RF amplifier in dual-mode