CW 6630 Search Results

ADL-66302TL

Contextual Info: ADL-66302TL TECHNICAL DATA Red Laser Diode Features • • • • AlGaAlP laser diode Peak Wavelength: 658 nm Optical Ouput Power: 30 mW Package: 5.6 mm, with Photo Diode Electrical Connection Pin Configuration Bottom View m-type PIN 1 2 3 Function LD Cathode

Contextual Info: ADL-66302TL AlGaInP Visible Laser Diode DATE：2008/06/06 Ver 1.0 o ★660nm 30mW 60 C Reliable High Power Operation • Features 1. Low operating current 2. High efficiency 3. High precision package 4. High power operation • Applications 1. Laser pointers

RD43FF

Abstract: RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 4466A 4066A
Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

RD43FF

Abstract: RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 3 phase rectifier diode 51500a
Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

AN4839

Abstract: RD43FF RD43FF01 RD43FF02 RD43FF03 RD43FF04 RD43FF05 RD43FF06 4466A 4066A
Contextual Info: RD43FF RD43FF Rectifier Diode Target Information Replaces November 2000, version DS5414-1.1 DS5414-2.0 October 2001 FEATURES KEY PARAMETERS • Optimised For High Current Rectifiers VRRM ■ High Surge Capability IF AV (max) 4466A ■ Very Low On-state Voltage

4513 BCD to Seven Segment display

Abstract: servo SG 5010 bu 5027 15367 JW-100SA diagram 7 segm led 6610 7 segment display 6011 tad 15620 13700 COUNTER LED bcd
Contextual Info: Version 1.0 Produced in February, 2004 Sharp Programmable Controller NEW Satellite JW50H/70H/100H Model name JW-12PS For four axes : JW-14PS For two axes : Pulse output module , User s Manual JW-12 PS JW-14 PS Thank you for buying the pulse output module JW-12PS/14PS for the Sharp Programmable Controller JW50H/

wiring diagram audio amplifier ic 6283

Abstract: cd 6283 ic wiring diagram RCR42G 520-587900O-00C311 CM06FD Cherokee International Power sp215 rockwell collins 634 EIMAC Application Bulletin rcr20g TB101
Contextual Info: Collins instruction book Collins Government Telecommunications Group 30S-1 RF Linear Amplifier 520-587900O-00C311 12th Edition, 15 March 1976 * Rockwell International Collins instruction book 30S-1 RF Linear Amplifier Collins Government Telecommunications Group

H-37-2

Abstract: H-38-2
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lower profile than Model 6639 Essentially infinite resolution Excellent rotational life High quality, rugged construction Recommended for HMI applications Cost and space saving ■ ■ Optional anti-rotation lug

H-37-2

Abstract: H-38-2
Contextual Info: *R oH S CO M PL IA NT Features • Lower profile than Model 6639 ■ Optional anti-rotation lug ■ Essentially infinite resolution ■ Optional mechanical stop ■ Excellent rotational life ■ High quality, rugged construction ■ Recommended for HMI applications

CW 6630

Abstract: H-37-2 H-38-2
Contextual Info: PL IA NT Features S CO M • *R oH ■ ■ ■ ■ ■ Lower profile than Model 6639 Essentially infinite resolution Excellent rotational life High quality, rugged construction Recommended for HMI applications Cost and space saving ■ ■ Optional anti-rotation lug

Contextual Info: T O S H IB A URSF05G49-1 P#URSF05G49-3P#URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P Unit in mm LOW POWER SWITCHING AND CONTROL APPLICATIONS • • • Repetitive Peak Off-State Voltage VDRM Repetitive Peak Reverse Voltage V r r m y =400V

Contextual Info: *R oH S CO M PL IA NT Features • Lower profile than Model 6639 ■ Optional anti-rotation lug ■ Essentially infinite resolution ■ Optional mechanical stop ■ Excellent rotational life ■ High quality, rugged construction ■ Recommended for HMI applications

Contextual Info: T O S H IB A URSF05G49-1 P#URSF05G49-3P#URSF05G49-5P TOSHIBA THYRISTOR SILICON PLANAR TYPE URSF05G49-1P, URSF05G49-3P, URSF05G49-5P Unit in mm LOW POWER SWITCHING AND CONTROL APPLICATIONS. • Repetitive Peak Off-State Voltage VDRM Repetitive Peak Reverse Voltage V r r m y =400V

Contextual Info: _EDI8F81026C ^EDI Electronic Designs Inc. Commercial Eight Megabit SRAM Module 1 Megabit x 8 Static RAM CMOS, Module with Revolutionary Pinout The EDI8F81026C is an 8 Megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate.

Contextual Info: EDI8F81026C m lUegxS SRAM Module ELECIROMC DC9SN&NC. 1Megabitx 8 StaticRAM CMOS, Module with RevolutionaryPinout F e a tu re s 1 Meg x 8 bit CM OS Static The EDI8F81026C is an 8 Megabit CM OS Static RAM based on two 512Kx8 Static RAMs mounted on a multi-layered

EDI8C8512C35TM

Abstract: EDI8C8512C45TM EDI8C8512C55TM
Contextual Info: 22EDI EDI8C8512C Electronic Designs Inc. • Low Power Four Megabit SRAM Module 512Kx8 Static RAM CMOS, 0.4" Wide DIP Module Features The EDI8C8512C is a 4096K bit CMOS Static RAM based on four 128Kx8 Static RAMs mounted in a multi­ layered, multi-cavity ceramic substrate. This high speed

EDI8F82045C

Abstract: EDI8F82045C100B6C EDI8F82045C70B6C EDI8F82045C85B6C
Contextual Info: EDI8F82045C 2Megx8 SRAM Module Features 2 Megabits x 8 Static RAM CMOS, Module 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI8F82045LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks

7470 TTL

Abstract: 7470 pin diagram V 7470 EDI8F82046C20M6C EDI8F82046C25M6C EDI8F82046C25M6I EDI8F82046C35M6C AN 7470
Contextual Info: EDI8F82046C 2 Megx8 SRAM Module Features 2 Meg x 8 bit CMOS Static Random Access Memory • Access Times 20 thru 35ns • TTL Compatible Inputs and Outputs • Fully Static, No Clocks High Density Packaging • JEDEC Approved, Revolutionary Pinout • 36 Pin DIP, No. 178

LM385/LM385 PDF FREE DOWNLOAD

Abstract: CW 6630
Contextual Info: LM285-1.2, LM385-1.2, LM385B-1.2 MICROPOWER VOLTAGE REFERENCES SLVS075E – APRIL 1989 – REVISED FEBRUARY 2002 D D D D D D Operating Current Range – LM285 . . . 10 µA to 20 mA – LM385 . . . 15 µA to 20 mA – LM385B . . . 15 µA to 20 mA 1% and 2% Initial Voltage Tolerance

trc 9500

Abstract: EDI8F8513B20M6C EDI8F8513B25M6C EDI8F8513B35M6C EDI8F8513C
Contextual Info: EDI8F8513C 512Kx8 Static Ram 512Kx8 Static RAM CMOS, Module Features The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static

EDI8F81025C100B6C

Abstract: EDI8F81025C70B6C EDI8F81025C85B6C EDI8F81025LP70B6C
Contextual Info: EDI8F81025C 1Megx8 SRAM Module 1Megx8 Static RAM CMOS, Module Features The EDI8F81025C is an 8 megabit CMOS Static RAM based on two 512Kx8 Static RAMs mounted on a multilayered epoxy laminate FR4 substrate. A low power version with data retention (EDI8F81025LP) is

trc 9500

Contextual Info: EDI8F8513C m o I, ELÉC1R0MC DE9CNS. H C 512KxSStatic Ram 512Kx8StaticRAM CMOS, Module F e a tu r e s The EDI8F8513C is a 4096K bit CMOS Static RAM based on four 128Kx8 or Static RAMs mounted on a multi-layered epoxy laminate FR4 substrate. Functional equivalence to the monolithic four megabit Static

Contextual Info: EDI9F416512C 4x512Kx16 SRAM Module 4x512Kx16 Static RAM CMOS, Module Features 4x512Kx16 bit CMOS Static Random Access Memory • Access Times 70 thru 100ns • Data Retention Function EDI9F416512LP • TTL Compatible Inputs and Outputs • Fully Static, No Clocks