CY62146VLL Search Results

Contextual Info: A D V A N C E D CY62146V MoBL TM IN F O R M A T IO N 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: -1 .8 V - 3 .3 V • • • • • Ultra low active, standby power Easy memory expansion with CE and OE features

CY62146VLL-70ZI

Abstract: CY62146V
Contextual Info: 1*CY62146V MoBL CY62146V MoBL™ 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

TSOP44 Package

Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
Contextual Info: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments

CY62146V

Abstract: CY62146VLL
Contextual Info: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

8355F

Abstract: 130C JESD22
Contextual Info: Cypress Semiconductor Package Qualification Report QTP# 99331 VERSION 2.0 December, 2000 48 Lead Fine Pitch Ball Grid Array FBGA 7mm x 8.5mm ASE Taiwan CYPRESS TECHNICAL CONTACT FOR QUALIFICATION DATA: Ed Russell Reliability Director (408) 432-7069 Kim-Ngan Nguyen

CY62146V

Abstract: CY62146VLL
Contextual Info: CY62146V MoBL 4M 256K x 16 Static RAM Features • • • • • • • Wide voltage range: 2.7V–3.6V Ultra-low active, standby power Easy memory expansion with CE and OE features TTL-compatible inputs and outputs Automatic power-down when deselected

CY62146VLL-70BAI

Abstract: CY62146V CY62146VLL-70ZI
Contextual Info: 46V CY62146V MoBL 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

CY62146V

Abstract: CY62146V18 ZNS25
Contextual Info: CY62146V MoBL CY62146V18 MoBL2™ 256K x 16 Static RAM put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).

Contextual Info: F/ CYPRESS ADVANCED INFORMATION 2 5 6 K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: - 1 . 8 V - 3 .6 V • • • • • CY62146V MoBL T M Ultra-low active, standby power Easy mem ory expansion with CE and OE features

W49C65

Abstract: 9938 9952 l28 cypress 9938 G 9948 PALC22V10B Taiwan Alpha TSMC Flash cy82
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 2000 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 1, 2000

CY62146VLL-70BAI

Abstract: A14C A15C CY62146V CY62146VL-70BAI
Contextual Info: V CYPRESS ADVANCED INFORMATION 256K x 16 Static RAM disabled BHE, BLE HIGH , or during a write operation (CE LOW, and WE LOW). Features • Low voltage range: - 1 . 8 V - 3 .6 V • • • • • CY62146V MoBL T M Ultra-low active, standby power Easy memory expansion with CE and OE features

CY62146V

Abstract: CY62146VLL-70ZI
Contextual Info: CY62146V MoBL 256K x 16 Static RAM Features • Low voltage range: — CY62146V: 2.7V–3.6V • Ultra-low active, standby power • Easy memory expansion with CE and OE features • TTL-compatible inputs and outputs • Automatic power-down when deselected

W49C65

Abstract: CY62256-SNC CY7C6300 CY7C4385 Hyundai 9944 PALC22V10B-15PC MR001230 9918
Contextual Info: CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT QUARTER 1, 2000 PERFORM PER THE REQUIREMENT OF 25-00008, RELIABILITY MONITOR PROGRAM SPECIFICATION Ed Russell Reliability Director CYPRESS SEMICONDUCTOR CORPORATION PRODUCT RELIABILITY REPORT Quarter 1, 2000

KM62256BLG-7

Abstract: K6R4016V1C-FI12 IS62LV1024LL-70T1 K6R4016V1C-TI10 K6R1016C1C-TC12 KM62256BLG7 MT58L32L32PT-7.5 GVT72024A8J-10L K6R4016V1C-FI10 K6R4008V1C-JC12
Contextual Info: ISSI SRAM Cross Reference Important: please read disclaimer on last page Cypress P/N ISSI P/N C7C1334-10AC IS61NW6432-8TQ C7C1334-5AC IS61NW6432-5TQ IS61NW6432-6TQ, C7C1334-7AC IS61NW6432-7TQ C7C1335-5.5AC IS61C632A-5TQ C7C1335-7AC IS61C632A-7TQ C7C1335-8.5AC

CY62146V

Abstract: CY62146V18 CY62146VLL-70BAI
Contextual Info: CY62146V MoBL CY62146V18 MoBL2™ 256K x 16 Static RAM Features put/output pins I/O0 through I/O 15 are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), BHE and BLE are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).