CY7C1018 Search Results

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power

CY7C1018

Abstract: CY7C1018DV33
Contextual Info: PRELIMINARY CY7C1018DV33 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1018CV33 • High speed — tAA = 8 ns • Low Active Power — Icc = 75 mA @ 8 ns • Low CMOS Standby Power The CY7C1018DV33 is a high-performance CMOS static

Contextual Info: CY7C1018DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1018CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

CY7C1018

Contextual Info: CY7C1018DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1018CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-10VC CY7C1018CV33-12VC CY7C1018CV33-12VXI CY7C1018CV33-15VXC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns • CMOS for optimum speed/power

Contextual Info: CY7C1018V33 CY7C1019V33 CYPRESS 128K x 8 Static RAM pins l/O0 through l/0 7 is then written into the location speci­ fied on the address pins (A q through A-ie)- Features • High speed Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write

CY7C1018V33

Abstract: CY7C1019V33
Contextual Info: 019V33 CY7C1018V33 CY7C1019V33 128K x 8 Static RAM Features pins I/O0 through I/O7 is then written into the location specified on the address pins (A0 through A16). • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout

CY7C1018DV33

Abstract: CY7C1018CV33 CY7C1018DV33-10VXI touch voltage control
Contextual Info: CY7C1018DV33 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1018CV33 • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • • • • — ISB2 = 3 mA

Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power

CY7C1018V33

Abstract: CY7C1019V33
Contextual Info: *= CY7C1018V33 CY7C1019V33 C Y PR ESS 128K x 8 Static RAM pins l/O0 through l/0 7 is then written into the location speci­ fied on the address pins (A q through A-ie)- Features • High speed Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-8VC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin and function compatible with CY7C1018BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power

CY7C1018CV33

Abstract: CY7C1018DV33 CY7C1018DV33-10VXI
Contextual Info: CY7C1018DV33 1-Mbit 128K x 8 Static RAM Functional Description[1] Features • Pin- and function-compatible with CY7C1018CV33 • High speed — tAA = 10 ns • Low Active Power — ICC = 60 mA @ 10 ns • Low CMOS Standby Power • • • • • • — ISB2 = 3 mA

7C1019BV33-10

Abstract: 7C1019BV33-12 CY7C1018BV33 CY7C1018V33 CY7C1019BV33 CY7C1019V33 7C101
Contextual Info: 1CY7C1019V33 CY7C1019BV33 CY7C1018BV33 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or

Contextual Info: CY7C1018DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Functional Description Features • Pin- and function-compatible with CY7C1018CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns ■ Low CMOS Standby Power

7C1019BV33-10

Abstract: 7C1019BV33-12 CY7C1018BV33 CY7C1018V33 CY7C1019BV33 CY7C1019V33
Contextual Info: 019V33 CY7C1019BV33 CY7C1018BV33 128K x 8 Static RAM Features • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout • Automatic power-down when deselected • Easy memory expansion with CE and OE options • Functionally equivalent to CY7C1019V33 and/or

Contextual Info: THIS SPEC IS OBSOLETE Spec No: 38-05131 Spec Title: CY7C1018CV33 128K X 8 STATIC RAM Sunset Owner: Prashanth Jnanendra pras Replaced by: NONE CY7C1018CV33 128K x 8 Static RAM Features • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 10 ns

CY7C1019V33-10VC

Abstract: CY7C1018V33 CY7C1019V33
Contextual Info: 3 CY7C1018V33 CY7C1019V33 128K x 8 Static RAM Features pins I/O0 through I/O7 is then written into the location specified on the address pins (A0 through A16). • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout

Contextual Info: CY7C1018DV33 CY7C1019DV33 1-Mbit 128 K x 8 Static RAM 1-Mbit (128 K × 8) Static RAM Features Functional Description • Pin- and function-compatible with CY7C1018CV33 and CY7C1019CV33 ■ High speed ❐ tAA = 10 ns ■ Low Active Power ❐ ICC = 60 mA @ 10 ns

CY7C1018BV33

Abstract: CY7C1018CV33 CY7C1018CV33-8VC
Contextual Info: CY7C1018CV33 128K x 8 Static RAM Features device has an automatic power-down feature that significantly reduces power consumption when deselected. • Pin- and function-compatible with CY7C1018BV33 • High speed — tAA = 8, 10, 12, 15 ns • CMOS for optimum speed/power

CY7C1018V33

Abstract: CY7C1019V33 cy7c1019v33-10vc
Contextual Info: CY7C1018V33 CY7C1019V33 CYPRESS 128K x 8 Static RAM pins l/O0 through l/0 7 is then written into the location speci­ fied on the address pins (A q through A-ie)- Features • High speed Reading from the device is accomplished by taking Chip Enable (CE) and Output Enable (OE) LOW while forcing Write

7C1019V33-10

Contextual Info: 3 CY7C1018V33 CY7C1019V33 128K x 8 Static RAM Features pins I/O0 through I/O7 is then written into the location specified on the address pins (A0 through A16). • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout

CY7C1018V33

Abstract: CY7C1019V33
Contextual Info: 019V33 CY7C1018V33 CY7C1019V33 128K x 8 Static RAM Features pins I/O0 through I/O7 is then written into the location specified on the address pins (A0 through A16). • High speed — tAA = 10 ns • CMOS for optimum speed/power • Center power/ground pinout

CS16LV40963

Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
Contextual Info: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455