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    Cypress Semiconductor CY7C1021BN-12ZXC

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    Infineon Technologies AG CY7C1021BN-15ZSXE

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    Infineon Technologies AG CY7C1021BN-15VXI

    IC SRAM 1MBIT PARALLEL 44SOJ
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    Infineon Technologies AG CY7C1021BN-15ZXC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    Rochester Electronics LLC CY7C1021BN-15ZXC

    IC SRAM 1MBIT PARALLEL 44TSOP II
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    CY7C1021BN Datasheets (70)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    CY7C1021BN Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12VC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12VI Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12VXC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12VXCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44SOJ Original PDF
    CY7C1021BN-12VXI Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12VXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44SOJ Original PDF
    CY7C1021BN-12ZC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12ZXC Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44TSOP Original PDF
    CY7C1021BN-12ZXC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-12ZXCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 12NS 44TSOP Original PDF
    CY7C1021BN-12ZXCT Cypress Semiconductor 1-Mbit (64K x 16) Static RAM; Density: 1 Mb; Organization: 64Kb x 16; Vcc (V): 4.5 to 5.5 V; Original PDF
    CY7C1021BN-15VC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-15VXC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-15VXCT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 15NS 44SOJ Original PDF
    CY7C1021BN-15VXE Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 15NS 44SOJ Original PDF
    CY7C1021BN-15VXET Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 15NS 44SOJ Original PDF
    CY7C1021BN-15VXI Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF
    CY7C1021BN-15VXIT Cypress Semiconductor Memory, Integrated Circuits (ICs), IC SRAM 1MBIT 15NS 44SOJ Original PDF
    CY7C1021BN-15ZC Cypress Semiconductor 1-Mbit (64K x 16) Static RAM Original PDF

    CY7C1021BN Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball

    CY7C1021BN-15VI

    Abstract: CY7C1021BN
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN-15VI CY7C1021BN

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Features Writing to the device is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is written into the location specified on the address pins (A0


    Original     		PDF CY7C1021BN CY7C10211BN I/O16) CY7C1021BN/CY7C10211BN CY7C1021BN

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN, CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C


    Original     		PDF CY7C1021BN, CY7C10211BN CY7C1021BN/CY7C10211BN CY7C1021BN

    CY7C1021BNV33

    Abstract: CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description The CY7C1021BNV33[1] is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball CY7C1021BNV33L-15BAI CY7C1021BNV33L-15ZXI

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BN CY7C10211BN 1-Mbit 64K x 16 Static RAM Functional Description[1] Features • Temperature Ranges The CY7C1021BN/10211BN is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly


    Original     		PDF CY7C1021BN CY7C10211BN 44-pin 400-mil CY7C1021BN/10211BN CY7C1021BN/CY7C10211BN

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BN/CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Features • Functional Description Temperature ranges ❐ Commercial: 0 °C to 70 °C ❐ Industrial: –40 °C to 85 °C ❐ Automotive-A: –40 °C to 85 °C ❐ Automotive-E: –40 °C to 125 °C


    Original     		PDF CY7C1021BN/CY7C10211BN CY7C1021BN/CY7C10211BN

    CY7C1021BNV33

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64K x 16 Static RAM Functional Description[1] Features • 3.3V operation 3.0V–3.6V The CY7C1021BNV is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021BNV33 CY7C1021BNV I/O16) CY7C1021BNV33

    CY7C1021BNV33

    Abstract: CY7C1021BNV33L-15BAI CY7C1021BNV33L-15VXI
    Text: CY7C1021BNV33 64 K x 16 Static RAM 64 K × 16 Static RAM Features Functional Description[1] • 3.3 V operation 3.0 V–3.6 V The CY7C1021BNV33 is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces power


    Original     		PDF CY7C1021BNV33 CY7C1021BNV33 44-pin 400-mil 48-ball CY7C1021BNV33L-15BAI CY7C1021BNV33L-15VXI

    CY7C1021BNV33

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64K x 16 Static RAM Functional Description[1] Features • 3.3V operation 3.0V–3.6V The CY7C1021BNV is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021BNV33 CY7C1021BNV I/O16) CY7C1021BNV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BN, CY7C10211BN 1-Mbit 64 K x 16 Static RAM 1-Mbit (64 K × 16) Static RAM Functional Description Features • The CY7C1021BN/CY7C10211BN is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power down feature that significantly reduces


    Original     		PDF CY7C1021BN, CY7C10211BN CY7C1021BN/CY7C10211BN

    CY7C1021BNV33

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64K x 16 Static RAM Functional Description[1] Features • 3.3V operation 3.0V–3.6V The CY7C1021BNV is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021BNV33 CY7C1021BNV I/O16) CY7C1021BNV33

    Untitled

    Abstract: No abstract text available
    Text: CY7C1021BNV33 64K x 16 Static RAM Functional Description[1] Features • 3.3V operation 3.0V–3.6V The CY7C1021BNV is a high-performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power-down feature that significantly reduces


    Original     		PDF CY7C1021BNV33 44-pin 400-mil 48-Ball CY7C1021BNV

    CY7C1021BN

    Abstract: No abstract text available
    Text: CY7C1021BN, CY7C10211BN 1 Mbit 64K x 16 Static RAM Features Functional Description • The CY7C1021BN/CY7C10211BN[1] is a high performance CMOS static RAM organized as 65,536 words by 16 bits. This device has an automatic power down feature that significantly


    Original     		PDF CY7C1021BN, CY7C10211BN CY7C1021BN/CY7C10211BN CY7C1021BN

    XC3S50AN-4TQG144C

    Abstract: AT45DB321D-SU VPC1128 xc3s50an xd15 HCPL-060L AT49BV322D MA3X152K0L LSI403LP YC358TJK-0710KL
    Text: 5 4 3 2 1 VCCB VCCB R1 R2 NU XA_5 XA_7 XA_4 XA_6 XA_3 XA_2 XA_1 XA_0 DSP_ADSN DSP_WRN DSP_DCS0N DSP_RDN DSP_ICS0N DSP_PCS0N XA_10 XA_8 XA_9 DSP_MEMCLK D XA_12 XA_11 FPGA_PROG-B XA_15 DSP_PIO3 IFC_PROG/-RUN XA_14 XA_13 VCCINT D 144 143 142 141 140 139 138 137


    Original     		PDF 0/GCLK11 0/GCLK10 FMMT449 3300pF XC3S50AN-4TQG144C AT45DB321D-SU VPC1128 xc3s50an xd15 HCPL-060L AT49BV322D MA3X152K0L LSI403LP YC358TJK-0710KL