CY7C130 Search Results

cy7c131-55nc

Abstract: ZT12 CY7C130 CY7C131 CY7C140 CY7C141 IDT7130 IDT7140
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS Features • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable o f withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation • Master CY7C130/CY7C131 easily ex­

ebe switches

Abstract: CY7C130 CY7C131 CY7C140 CY7C141 7CJ41-25 7CI40-35
Contextual Info: CYPRESS SEMICONDUCTOR 00 0 3 4 2 1 EbE D 5 • CY7C130/CY7C131 CY7C140/CY7C141 -Z Z A Z . o y n p rrQ C 1024 x 8 Dual-Port Static RAM SEMICONDUCTOR Features Functional Description • 0,8-micron CMOS for optimum speed/power • Automatic power-down • TTL-compatible

CY7C1304V25

Contextual Info: 5 CY7C1304V25 Advanced Information 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167 MHz Clock for High Bandwidth — 2.5 ns Clock-to-Valid access time

Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 CYPRESS SEMICONDUCTOR Features Functional Description • 0.8-micron CMOS for optimum speed/power • Automatic power-down • TTL compatible • Capable of withstanding greater than 2001V electrostatic discharge • Fully asynchronous operation

Contextual Info: fax id: 5200 CY7C130/CY7C131 CY7C140/CY7C141 W CYPRESS 1K x 8 Dual-Port Static Ram Features Functional Description True Dual-Ported memory cells which allow simulta­ neous reads of the same memory location 1K x 8 organization 0.65-micron CMOS for optimum speed/power

CY7C1302CV25

Abstract: 1e77
Contextual Info: CY7C1302CV25 PREMILINARY 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture Features Functional Description • Separate independent Read and Write data ports — Supports concurrent transactions • 167-MHz clock for high bandwidth — 2.5 ns clock-to-Valid access time

QDR cypress burst of two

Abstract: Cypress QDR CY7C1302V25 CY7C1304V25
Contextual Info: QDR SRAMs Fact Sheet Product Overview Cypress's family of Quad Data Rate™ QDR™ SRAMs offers customers the bandwidth improvement that high-speed applications demand. The family currently consists of 2 devices: The CY7C1302V25, with its burst length of 2, and the

CY7C1304V25

Contextual Info: 304V25 CY7C1304V25 Advanced Information 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167 MHz Clock for High Bandwidth — 2.5 ns Clock-to-Valid access time

PLCC-52

Abstract: CY7C130 CY7C131 CY7C140 CY7C141 CY7C131-25JC CY7C131-35J Z1014
Contextual Info: CY7C130, CY7C130A CY7C131, CY7C131A CY7C140, CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1K x 8 organization ■ 0.65 micron CMOS for optimum speed and power

CY7C1304DV25

Contextual Info: CY7C1304DV25 PRELIMINARY 9-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports The CY7C1304DV25 is a 2.5V Synchronous Pipelined SRAM equipped with QDR™ architecture. QDR architecture consists

CY7C1303BV25

Abstract: CY7C1306BV25
Contextual Info: CY7C1303BV25 CY7C1306BV25 PRELIMINARY 18-Mbit Burst of 2 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports — Supports concurrent transactions • 167-MHz Clock for high bandwidth — 2.5 ns Clock-to-Valid access time

7C13135

Abstract: CY7C140-35PC 7C130 CY7C130 CY7C131 CY7C140 CY7C141
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 1K x 8 Dual-Port Static RAM Features Functional Description • True Dual-Ported memory cells which allow simultaneous reads of the same memory location The CY7C130/CY7C131/CY7C140 and CY7C141 are high-speed CMOS 1K by 8 dual-port static RAMs. Two ports

CY7C1302V25

Abstract: CY7C1302V25-133BZC
Contextual Info: yy 7c1302V25: Rev 1.0 Revised: February 15, 2000 CY7C1302V25 Advanced Information 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167-MHz Clock for High Bandwidth

CY7C1305V25-167BZC

Contextual Info: CY7C1305V25 CY7C1307V25 PRELIMINARY 18-Mb Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 2.5V core power supply with HSTL Inputs and Outputs The CY7C1305V25/CY7C1307V25 are 2.5V Synchronous

CY7C1304V25

Contextual Info: CY7C1304V25 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports — Supports concurrent transactions • 167 MHz Clock for high bandwidth — 2.5 ns Clock-to-Valid access time • 4-Word burst for reducing address bus frequency

CY7C1305AV25

Abstract: CY7C1305AV25-133 CY7C1305AV25-167 CY7C1307AV25 CY7C1307AV25-167
Contextual Info: CY7C1305AV25 CY7C1307AV25 PRELIMINARY 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports • 2.5V core power supply with HSTL Inputs and Outputs The CY7C1305AV25/CY7C1307AV25 are 2.5V Synchronous

7C130

Abstract: L1314
Contextual Info: CY7C130/CY7C131 CY7C140/CY7C141 _ 1024 x 8 Dual-Port Static RAM aT ^ p -¿r CYPRESS ^ SEMICONDUCTOR E ach p o rt has independent control pins; chip enable C E , w rite enable (RyW), and output The CY 7C130/CY7C131/CY7C140/ enable (O E ). TVvo flags are p rovided on each

Contextual Info: CY7C1302V25 9-Mb Pipelined SRAM with QDR Architecture Features Functional Description • • Separate Independent Read and Write Data Ports — Supports concurrent transactions • 167-MHz Clock for high bandwidth — 2.5 ns Clock-to-Valid access time

CY7C1302DV25

Abstract: CY7C1302DV25-167 3M Touch Systems
Contextual Info: CY7C1302DV25 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture 9-Mbit Burst of Two Pipelined SRAMs with QDR™ Architecture Features Functional Description • Separate independent Read and Write data ports ❐ Supports concurrent transactions ■

CY7C130

Abstract: CY7C131 CY7C140 CY7C141
Contextual Info: CY7C130, CY7C130A CY7C131, CY7C131A 1 K x 8 Dual-Port Static RAM 1 K × 8 Dual-Port Static RAM Features Functional Description • True dual-ported memory cells, which allow simultaneous reads of the same memory location ■ 1 K × 8 organization ■ 0.65 micron CMOS for optimum speed and power

CY7C1302DV25

Abstract: CY7C1302DV25-167 5N25
Contextual Info: CY7C1302DV25 9-Mbit Burst of Two Pipelined SRAMs with QDR Architecture Features Functional Description • Separate independent Read and Write data ports — Supports concurrent transactions • 167-MHz clock for high bandwidth — 2.5 ns Clock-to-Valid access time

Contextual Info: CY7C130/CY7C131 _ CY7C140/CY7C141 = SEMICONDUCTOR 1024 x 8 D ual-Port Static R A M Features Functional Description • 0.8-micron CMOS for optimum speed/power T he CY 7C 130/CY7C13 L/CY7C140/ CY7C141 arc high-speed C M O S IK by 8 dual-port static RA M s. Two ports are pro­

CY7C1305BV18

Abstract: CY7C1307BV18
Contextual Info: CY7C1305BV18 CY7C1307BV18 18-Mbit Burst of 4 Pipelined SRAM with QDR Architecture Features Functional Description • Separate independent Read and Write data ports — Supports concurrent transactions • 167-MHz Clock for high bandwidth — 2.5 ns Clock-to-Valid access time

cy7c136

Abstract: EME-6300H CY7C13X
Contextual Info: Qualification Report January 1996 QTP# 95152/95487, Version 1.0 2K/1K x 8 Dual-Port Static RAM MARKETING PART NUMBER DEVICE DESCRIPTION CY7C130/131 1K x 8 Dual-Port Static RAM CY7C140/141 1K x 8 Dual-Port Static RAM CY7C132/142 2K X 8 Dual-Port Static RAM