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CY7C1315BV18 Price and Stock

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Infineon Technologies AG CY7C1315BV18-200BZC IC SRAM 18MBIT PARALLEL 165FBGA
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DigiKey	CY7C1315BV18-200BZC	Tray			136	1 - 10 - 100 - 1000 $32.35007 10000 $32.35007	Buy Now
Rochester Electronics LLC CY7C1315BV18-167BZC IC SRAM 18MBIT PAR 165FBGA
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DigiKey	CY7C1315BV18-167BZC	Tray			10	1 - 10 $31.96 100 $31.96 1000 $31.96 10000 $31.96	Buy Now
Infineon Technologies AG CY7C1315BV18-167BZC IC SRAM 18MBIT PAR 165FBGA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CY7C1315BV18-167BZC	Tray			136	1 - 10 - 100 - 1000 $30.93772 10000 $30.93772	Buy Now
Infineon Technologies AG CY7C1315BV18-200BZI IC SRAM 18MBIT PARALLEL 165FBGA
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DigiKey	CY7C1315BV18-200BZI	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC CY7C1315BV18-250BZC IC SRAM 18MBIT PAR 165FBGA
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DigiKey	CY7C1315BV18-250BZC	Tray			9	1 - 10 $35.13 100 $35.13 1000 $35.13 10000 $35.13	Buy Now

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CY7C1315BV18 Datasheets (18)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CY7C1315BV18		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-167BZC		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-167BZC		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 167MHZ 165FBGA		Original	PDF
CY7C1315BV18-167BZCT		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-167BZCT		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 167MHZ 165FBGA		Original	PDF
CY7C1315BV18-167BZXC		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-200BZC		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-200BZC		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA		Original	PDF
CY7C1315BV18-200BZI		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V		Original	PDF
CY7C1315BV18-200BZI		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA		Original	PDF
CY7C1315BV18-200BZXC		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-200BZXC		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA		Original	PDF
CY7C1315BV18-200BZXI		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V		Original	PDF
CY7C1315BV18-200BZXI		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 200MHZ 165FBGA		Original	PDF

CY7C1315BV18-250BZC		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture		Original	PDF
CY7C1315BV18-250BZC		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 250MHZ 165FBGA		Original	PDF
CY7C1315BV18-250BZXC		Cypress Semiconductor	18-Mbit QDR -II SRAM 4-Word Burst Architecture; Architecture: QDR-II, 4 Word Burst; Density: 18 Mb; Organization: 512Kb x 36; Vcc (V): 1.7 to 1.9 V		Original	PDF
CY7C1315BV18-250BZXC		Cypress Semiconductor	Memory, Integrated Circuits (ICs), IC SRAM 18MBIT 250MHZ 165FBGA		Original	PDF

CY7C1315BV18 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
CY7C1311BV18 Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18 Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth	Original	PDF	CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
Untitled Abstract: No abstract text available Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture 18-Mbit QDR™-II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions	Original	PDF	CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit CY7C1911BV18, CY7C1315BV18
CY7C1311BV18 Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18 Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth	Original	PDF	CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
Untitled Abstract: No abstract text available Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth	Original	PDF	CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz 600MHz) SelecCY7C1911BV18 278-MHz
CY7C1311BV18 Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18 Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz clock for high bandwidth	Original	PDF	CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
CY7C1911BV18 Abstract: CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1313 Text: CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate independent read and write data ports ❐ Supports concurrent transactions ■ 300 MHz clock for high bandwidth	Original	PDF	CY7C1311BV18, CY7C1911BV18 CY7C1313BV18, CY7C1315BV18 18-Mbit CY7C1911BV18 CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1313
Untitled Abstract: No abstract text available Text: CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 PRELIMINARY 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 300-MHz clock for high bandwidth	Original	PDF	CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 300-MHz 600MHz) CY7C1911BV18 BB165E BB165D
CY7C1311BV18 Abstract: CY7C1313BV18 CY7C1315BV18 CY7C1911BV18 Text: CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 PRELIMINARY 18-Mbit QDR -II SRAM 4-Word Burst Architecture Features Functional Description • Separate Independent Read and Write data ports — Supports concurrent transactions • 250-MHz clock for high bandwidth	Original	PDF	CY7C1311BV18 CY7C1911BV18 CY7C1313BV18 CY7C1315BV18 18-Mbit 250-MHz CY7C1311BV18 CY7C1313BV18 CY7C1315BV18 CY7C1911BV18
Xilinx spartan xc3s400_ft256 Abstract: XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256 Text: Memory Interface Solutions User Guide UG086 v3.3 December 2, 2009 R R Xilinx is disclosing this Document and Intellectual Property (hereinafter “the Design”) to you for use in the development of designs to operate on, or interface with Xilinx FPGAs. Except as stated herein, none of the Design may be copied, reproduced, distributed, republished,	Original	PDF	UG086 DQS10 DQS11 DQS12 DQS13 DQS14 DQS15 DQS16 DQS17 Xilinx spartan xc3s400_ft256 XC3S400_FT256 XC3S400PQ208 XC3S250EPQ208 xc3s400TQ144 XC3S400FT256 xc3s1400afg676 XC3S700AFG484 XC3S500EPQ208 XC3S200FT256
CY7C1338-100AXC Abstract: gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC Text: CYPRESS / GALVANTECH # - Connect pin 14 FT pin to Vss CY7C1019BV33-15VC GS71108AJ-12 & - Does not support 1.8V I/O CY7C1019BV33-15VXC GS71108AGJ-12 * - Tie down extra four I/Os with resistor CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12	Original	PDF	CY7C1019BV33-15VC GS71108AJ-12 CY7C1019BV33-15VXC GS71108AGJ-12 CY7C1019BV33-15ZC GS71108ATP-12 CY7C1019BV33-15ZXC GS71108AGP-12 CY7C1019CV33-10VC GS71108AJ-10 CY7C1338-100AXC gvt7164d32q-6 CY7C1049BV33-12VXC CY7C1363C-133AC CY7C1021DV33-12ZXC CY7C1460AV25-200AXC CY7C1338G-100AC CY7C1041V33-12ZXC CY7C1460V33-200AXC CY7C1021DV33-10ZXC
CQ 419 Abstract: cq 529 electronic component cq 529 transistor cq 449 ep2s90f1020c3 EP2S90F1020 transistor cq 529 EP1S60 EP2S15 SRAM controller Text: Interfacing QDRII & QDRII+ SRAM with Stratix II, Stratix & Stratix GX Devices Application Note 326 April 2006, ver. 4.0 Introduction Synchronous static RAM SRAM architectures support the high throughput requirements of communications, networking, and digital	Original	PDF
CY7C1313AV18-250BZC Abstract: EP1S60 EP2S60F1020C5ES F1020 v32-88 Text: Interfacing QDRII+ & QDRII with Stratix II, Stratix II GX, Stratix, & Stratix GX Devices Application Note 326 May 2008, ver. 5.1 Introduction Synchronous static RAM SRAM architectures support the high throughput requirements of communications, networking, and digital	Original	PDF