CY7C187A Search Results

CY7C187

Abstract: CY7C187A
Contextual Info: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power

CY7C187

Abstract: CY7C187A
Contextual Info: 1CY 7C18 7A CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down feature, reducing the power consumption by 55% when deselected. • High speed — 20 ns • CMOS for optimum speed/power

CY7C187

Abstract: CY7C187A CY7C187A-15DMB CY7C187A-15LMB
Contextual Info: CY7C187A 64KĂxĂ1 Static RAM Features D D D D D D The CY7C187A is a highĆperformance CMOS static RAM organized as 65,536 words by 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C187A has an automatic powerĆdown

Contextual Info: CY7C187A CYPRESS SEMICONDUCTOR 6 4 K x l Static R/W RAM Features Functional Description • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 495 raW • Low standby power The CY7C187A is a high-performance CMOS static RAM organized as 65,536

16dag

Contextual Info: CY7C187A r ’Y P P F Q Q 65,536 x 1 Static R/W RAM SEMICONDUCTOR Features Functional Description • Autom atic power-down when dese­ lected T he CY7C187A is a high-performance CMOS static RAM organized as 65,536 words by 1 bit. Easy memory expansion is

ha1f

Abstract: cerdip 300mil CY7C187 CY7C187A
Contextual Info: » r CY7C187A CY PR ESS 64K x 1 Static R A M Features Functional Description • H ighspeed — 20 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs • Automatic power-down when

Contextual Info: CY7C187A 5T CYPRESS SEMICONDUCTOR 65,536 x 1 S tatic R /W R A M Features Functional Description • Automatic power-down when deaelected The CY7C187A is a high-performance CMOS static RAM organized as 65,536 words by 1 b it Easy memory expansion is provided by an active LOW chip enable

CY7C187A

Contextual Info: CYPRESS SEMI CONDUCTOR 4bE OOObbSS D ICYP a T -q ^ iS -O ^ CY7C187A rM 'Lr CYPRESS _ SEMICONDUCTOR Features 65,536 x 1 Static R/W RAM functional Description Automatic power-down when deselected CMOS for optimum speed/power Highspeed — 12 ns Low active power

Contextual Info: '* CYPRESS CY7C187A 64K x 1 Static RAM Features Functional Description • H ighspeed — 20 ns location specified on th e address pins Ao through A 15 . T he CY7C187A is a high-perform ance C M O S static R A M organized as 65,536 words by 1 bit. Easy m em ory expansion is

CY7C187

Abstract: CY7C187A tsct 1000 ZP35
Contextual Info: CY7C187A CYPRESS 64K x 1 Static RAM Features Functional Description • H ighspeed — 20 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs • Automatic power-down when

48an

Contextual Info: K *= ? CY7C187A SEMICONDUCTOR 65,536 x 1 S tatic R /W RA M Features Functional Description • A utom atic power-down when dese­ lected The • C M O S fo r optim um speed/power w o rd s b y 1 b it. E a s y m e m o r y e x p a n s io n is C Y7C 187A C M O S s t a t ic

Contextual Info: CY7C187A '' f CYPRESS SEMICONDUCTOR 6 4 K x l Static R/W RAM Features Functional Description • High speed — 20 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 220 mW • TTL-compatible inputs and outputs • Automatic power-down when

Contextual Info: CY7C 187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down fea­ ture, reducing the power consumption by 55% when deselect­ ed. • High speed — 20 ns W riting to the device is accomplished when the chip enable

l52c

Contextual Info: CY7C187A 64K x 1 Static RAM Features provided by an active LOW chip enable CE and three-state drivers. The CY7C187A has an automatic power-down fea­ ture, reducing the power consumption by 55% when deselect­ ed. • High speed — 20 ns Writing to the device is accomplished when the chip enable

automatic change over switch circuit diagram

Abstract: CY7C187-35PC C187 CY7C187 CY7C187A C1871
Contextual Info: 1CY 7C18 7 CY7C187 64K x 1 Static RAM Features vided by an active LOW chip enable CE and three-state drivers. The CY7C187 has an automatic power-down feature, reducing the power consumption by 56% when deselected. • High speed — 15 ns • CMOS for optimum speed/power

256K x 8 SRAM CY7C128A SRAM

Abstract: 5962-86705 PLD28 5962-89935 pld20ra10 5962-89598 CY7C132 cy7c291 PLD20RA PLDC20G10
Contextual Info: Military Product Selector Guide Static RAMs Size Organization Pins DIP SMD Number Part Number Speed (ns) ICC/ISB/ICCDR (mA @ ns) 883 Availability 1K 256 x 4 22 CY7C122 5962-88594 tAA = 25, 35 90 @ 25 Now 4K 1K x 4—Separate I/O 24S CY7C150 5962-88588 tAA = 25

smd transistor w16

Abstract: transistor smd w16 PALC22V10B-15DMB 256K x 8 SRAM CY7C128A SRAM PALC22V10B-20DMB Mil JAN jm38510 Cross Reference smd cross reference smd w20 CY7C245-45WMB 455b
Contextual Info: SMD Cross Reference Listed below are the SMDs for which Cypress is an approved source of supply. Please contact your local Cypress representative or see the Cypress website www.cypress.com for the latest SMD update. All part numbers that have an X in the PPL (Preferred

c1878

Abstract: c1871 C1879 7C187-15 7C187-20 7C187-25 7C187-35 C187 CY7C187 CY7C187-12PC
Contextual Info: CY7C187 64KĂxĂ1 Static RAM Features D D D D D D The CY7C187 is a highĆperformance CMOS static RAM organized as 65,536 words x 1 bit. Easy memory expansion is provided by an active LOW chip enable CE and threeĆstate drivers. The CY7C187 has an automatic powerĆdown

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

7C187-15

Abstract: 7C187-20 CY7C187 CY7C187A
Contextual Info: _ CY7C187 CYPRESS 64K x 1 Static RAM location specified on th e address pins Ao through A is . Features Functional Description • High speed — 15 ns • CMOS for optimum speed/power • Low active power — 495 mW • Low standby power — 220 mW

CY62256LL-PC

Abstract: VIC068A-GC VIC64-NC VIC64-UMB PALCE22V10-JI PALC16L8Q PLD VME A113 CY7B923 JESD22-A113
Contextual Info: Cypress Semiconductor Product Reliability 1997 Published June, 1997 CYPRESS SEMICONDUCTOR PRODUCT RELIABILITY TABLE OF CONTENTS 1.0 OVERVIEW OF CYPRESS SEMICONDUCTOR TOTAL QUALITY MANAGEMENT SYSTEM. 1 2.0 ELECTRICAL AVERAGE OUTGOING QUALITY. 2

Contextual Info: CY7C187 64K x 1 Static RAM vided by an active LOW chip enable CE and three-state driv­ ers. The CY7C187 has an automatic power-down feature, reducing the power consumption by 56% when deselected. Features • High speed — 15 ns • CMOS for optimum speed/power

7C187-15

Abstract: 7C187-20 7C187-25 7C187-35 C187 CY7C187 CY7C187-15PC CY7C187-15VC CY7C187-20PC CY7C187A
Contextual Info: CY7C187 64K x 1 Static RAM Features vided by an active LOW Chip Enable CE and three-state drivers. The CY7C187 has an automatic power-down feature, reducing the power consumption by 56% when deselected. • High speed — 15 ns • CMOS for optimum speed/power

cy7c9101

Abstract: CY2901 CY7C190 PLD20RA10 CY2149 CY7C122 CY7C148 CY7C149 CY7C150 22V10-Macrocell
Contextual Info: Military Product Selector Guide Static RAMs Size Organization 64 64 1K 1K 4K 4K 4K 4K 4K 8K 8K 16K 16K 16K 16K 16K 16K 16K 16K 16K 32K 32K 32K 32K 32K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 64K 256K 256K 256K 256K 256K 256K 256K 1M 1M