CY7C194BN Search Results
CY7C194BN Price and Stock
Rochester Electronics LLC CY7C194BN-15VCIC SRAM 256KBIT PARALLEL 24SOJ |
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CY7C194BN-15VC | Tube | 1,921 | 48 |
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Rochester Electronics LLC CY7C194BN-25VCIC SRAM 256KBIT PARALLEL 24SOJ |
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CY7C194BN-25VC | Bulk | 656 | 48 |
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Rochester Electronics LLC CY7C194BN-15PCIC SRAM 256KBIT PARALLEL 24DIP |
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CY7C194BN-15PC | Tube | 504 | 48 |
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Infineon Technologies AG CY7C194BN-15VCIC SRAM 256KBIT PARALLEL 24SOJ |
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CY7C194BN-15VC | Tube |
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Infineon Technologies AG CY7C194BN-15PCIC SRAM 256KBIT PARALLEL 24DIP |
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CY7C194BN-15PC | Tube |
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CY7C194BN Datasheets (7)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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CY7C194BN |
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256 Kb (64K x 4) Static RAM | Original | 399.47KB | 10 | |||
CY7C194BN-15PC |
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256 Kb (64K x 4) Static RAM | Original | 399.48KB | 10 | |||
CY7C194BN-15PC |
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Memory, Integrated Circuits (ICs), IC SRAM 256KBIT 15NS 24DIP | Original | 15 | ||||
CY7C194BN-15VC |
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256 Kb (64K x 4) Static RAM | Original | 399.48KB | 10 | |||
CY7C194BN-15VC |
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Memory, Integrated Circuits (ICs), IC SRAM 256KBIT 15NS 24SOJ | Original | 15 | ||||
CY7C194BN-15VCT |
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256 Kb (64K x 4) Static RAM; Density: 256 Kb; Organization: 64Kb x 4; Vcc (V): 4.5 to 5.5 V; | Original | 392.07KB | 10 | |||
CY7C194BN-25VC |
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256 Kb (64K x 4) Static RAM | Original | 399.46KB | 10 |
CY7C194BN Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: CY7C194BN 256 Kb 64K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages. |
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CY7C194BN CY7C194BN AN1064, | |
MMA6
Abstract: MO088
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CY7C194BN CY7C194BN MMA6 MO088 | |
Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns The CY7C194BN is a high-performance CMOS Asynchronous SRAM organized as 64 K × 4 bits that supports an asynchronous memory interface. The device features an automatic |
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CY7C194BN CY7C194BN 24-pin | |
Contextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power ■ Transistor transistor logic (TTL) compatible inputs and outputs |
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CY7C194BN CY7C194BN AN1064, | |
A1491-6
Abstract: CY7C194BN CY7C194BN-15PC CY7C194BN-15VC CY7C194BN-25VC
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CY7C194BN CY7C194BN A1491-6 CY7C194BN-15PC CY7C194BN-15VC CY7C194BN-25VC | |
cypress AN1064 sram system guidelinesContextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM 256 Kb (64 K × 4) Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0 V ± 10% (4.5 V to 5.5 V) ■ Complementary metal oxide semiconductor (CMOS) for optimum speed/power |
Original |
CY7C194BN CY7C194BN 24-pin cypress AN1064 sram system guidelines | |
cypress AN1064 sram system guidelinesContextual Info: CY7C194BN 256 Kb 64 K x 4 Static RAM Features General Description • Fast access time: 15 ns ■ Wide voltage range: 5.0V ± 10% (4.5V to 5.5V) ■ CMOS for optimum speed/power ■ TTL-compatible inputs and outputs ■ CY7C194BN is available in 24 DIP, 24 SOJ packages. |
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CY7C194BN CY7C194BN AN1064, cypress AN1064 sram system guidelines |