CZL - A8 Search Results

CZL - A8

Abstract: A9 sot223 MARKING 7A SOT89 A9 SOT-89 L3 SOT223 MARKING SOT-89 RT9163-33CX RT9163-33CXL RT9163-33CZL RT9163-35CX
Contextual Info: RT9163 500mA Low Dropout Positive Voltage Regulator General Description Features The RT9163 is a positive low dropout regulator z Low Dropout, Maximum 1.4V at 500mA designed for applications requiring low dropout z Fast Transient Response performance at full rated current. The device is

A1719

Abstract: 1m x 8 sram
Contextual Info: "7 05*5 5 ^ . 1M x 8 SRAM DIL MODULE S Y iita q SYS81000FKX-55/70/85/10/12 limited 1,048,576 x 8 CMOS Static RAM Module Issue 2.0 : August 1994 Description j Features ] Access Times of 55/70/85/100/120 ns. 36 Pin JEDEC standard Dual-ln-Line package. The SYS81000FKX is a plastic 8M Static RAM

A18 sot

Abstract: sot-89 Marking GK rtb4 marking sot223 GY RT9161-33CX A9 sot223 AMP marking c7 sot-89 RT9161-18CX RT9161-26CV RT9161-33CV
Contextual Info: RT9161/A 300/500mA Low Dropout Linear Voltage Regulator General Description Features The RT9161/A is a 300/500mA fixed output voltage z Low Dropout Voltage of 200mV at Output low dropout linear regulator. Typical ground current Current 100mA, 450mV at Output Current

Contextual Info: Preliminary CAT28HT256 E x te n d e d T e m p e r a tu r e : 1 7 0 ° C 256K-Bit CMOS E2PR0M FEATURES • Fast Read Access Times: 200/250 ns ■ Automatic Page Write Operation: -1 to 64 Bytes in 10ms -P a g e Load Tim er ■ Low Power CMOS Dissipation: -A ctive: 30 mA Max.

Contextual Info: CAT28C65B 64K-Bit CMOS E2PROM FEATURES • Fast Read Access Times: - 120/150/200ns ■ Commercial, Industrial and Automotive Tern perature Ranges ■ Low Power CMOS Dissipation: - Active: 25 mA Max. - Standby: 100 fiA Max. ■ Automatic Page Write Operation:

SPR128

Abstract: narrator sp0256 SP0264 DSR 505 MC1316 sp0256b Microchip Speech 35D8 SP025
Contextual Info: SP0264 M icrochip NARRATOR SPEECH PROCESSOR FEATURES DESCRIPTION • Natural speech • On-chlp 64K bit ROM • Stand alone operation with Inexpensive support components • Wide operating voltage • Word, phrase or sentence library, ROM expandable • Directly expandable to a total of 480K ROM

a10157

Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
Contextual Info: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA

CZL - A8

Contextual Info: M IT S U B IS H I LSlS MH25632XJ-7,-8/ MH25632SXJ-7.-8 FAST PAGE MODE 8388608-BIT 262144-WORD BY 32-BIT DYNAMIC RAM DESCRIPTION M H 2 5 6 3 2 X J /S X J is 2 6 2 1 4 4 -word by 3 2 -b it dynamic RAM •nodule. This consists of two industry standard 256K x 16bit

44c256

Abstract: KM44C256 KM44C256CSL-7 KM44C256CSL-8 18 pins KM44C256
Contextual Info: SAMSUNG E L E C TRONICS INC b?E D • 71^142 KM44C256CSL O O I S M 1^ TER SUGK CM OS DRAM 256Kx4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION » Performance range: The Samsung KM44C256CSL is a CMOS high speed 262,144 x 4 Dynamic Random Access Memory. Its

Contextual Info: TOSHIBA TC58V32AFT TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 32 Mbit 4 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V32 device is a single volt 32 M (34,603,008) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 512 blocks.

Contextual Info: TOSHIBA TC58V32ADC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 32 Mbit 4 M x 8 bit CMOS NAND E2PROM (4M BYTE Sm artM edia ) DESCRIPTION The TC58V32ADC device is a single 3.3 volt 32 M (34,603,008) bit NAND Electrically Erasable and

A22-A13

Contextual Info: TOSHIBA TC58V64FT TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M X 8 bit CMOS NAND E2PROM DESCRIPTION The TC58V64 device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 528 bytes X 16 pages X 1024 blocks.

upa64

Abstract: UPA128 STP221
Contextual Info: S un M icroelectronics July 1997 u se Uniprocessor System Controller DATA SHEET D e s c r ip t io n The Uniprocessor System Controller USC has a DRAM memory controller and functions to regulate the flow of requests and data on the UPA bus. It also controls the resets going to all UPA clients.

SmartMedia Logical Format

Abstract: TH58V128DC
Contextual Info: TOSHIBA TENTATIVE TH58V128DC TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 128 Mbit 16 M x 8 bit CMOS NAND E2PROM (16M BYTE Sm artM edia ) DESCRIPTION The TH58V128DC device is a single 3.3 volt 128 M (138,412,032) bit NAND Electrically Erasable and

TC58V64DC

Abstract: SmartMedia Logical Format SmartMedia Logical Format ID maker code
Contextual Info: TOSHIBA TC58V64DC TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 64 Mbit 8 M x 8 bit CMOS NAND E2PROM (8M BYTE Sm artM edia ) DESCRIPTION The TC58V64DC device is a single 3.3 volt 64 M (69,206,016) bit NAND Electrically Erasable and

Contextual Info: Lattice is ;Semiconductor I Corporation L S I3 1 6 0 High Density Programmable Logic Features • HIGH-DENSITY PROGRAMMABLE LOGIC — 160 I/O Pins — 7000 PLD Gates — 320 Registers — High Speed Global Interconnect — Wide Input Gating for Fast Counters, State

RDRAM Clock

Abstract: RR15
Contextual Info: Direct RDRAM 64/72-Mbit 256Kx16/18x16d SIEM EN S O I ADVANCE INFORMATION Overview n Uses R am bus Signaling Level (RSL) for up to 800MHz operation Preliminary Data The R am bus Direct RDRAM™ is a general p u rp o se high-perform ance m em ory device suitable for u se in a

Contextual Info: Preliminary Data Sheet July 1997 m icroelectronics group Lucent Technologies Bell Labs Innovations LUC3M08 Eight Ethernet MACs for 10/100 Mbits/s Frame Switching Features • Eight 10/100 Mbits/s Ethernet MACs integrated together with separate transmit and receive port

atmel sine wave pwm circuit atmega 128

Abstract: SP12 SP13 SP14 SP15 pwm atmega 16 input id atmegal 8 036AC
Contextual Info: Features • Utilizes the AVR RISC Architecture • AVR - High-performance and Low-power RISC Architecture - 120/121 Powerful Instructions - Most Single Clock Cycle Execution - 32 x 8 General Purpose Working Registers + Peripheral Control Registers - Up to 6 MIPS Throughput at 6 MHz

Contextual Info: Features • Utilizes the AVR RISC Architecture • AVR - High-performance and Low-power RISC Architecture - 120/121 Powerful Instructions - Most Single Clock Cycle Execution - 32 x 8 General Purpose Working Registers + Peripheral Control Registers - Up to 6 MIPS Throughput at 6 MHz

TMP93CM41F

Abstract: UPR resistor TMP9eCM041 ADS36A TMP93CM40 Analog Devices 2S20 FC-732
Contextual Info: TOSHIBA TLCS-900 Series TMP93CM40/TMP93CM41 Low Voltage/Low Power 4 External memory expansion CMOS 16-bit Microcontrollers • Can be expanded up to 16M bytes (for both programs and data). TMP93CM40F/TMP93CM41F • AM 8/16 pin (select the external data bus width).

Contextual Info: m i c r o e l e c t r o n i c s group Lucent Technologies Bell Labs Innovations ORCA OR2CxxA 5.0 V and OR2TxxA (3.3 V) Series Series Field-Programmable Gate Arrays Features 2 • Flip-flop/latch options to allow programmable prior­ ity of synchronous set/reset vs. clock enable

CXD1255Q

Abstract: cxa1337 cx-7925b sony frequency synthesizer pll ILX501 lhi 778 cn/A/U 237 BG CXD1149 Semicon volume 1 IU02 icx024
Contextual Info: Semiconductor IC Semiconductor Integrated Circuit Data Book 1992 List of Model Names/ Index by Usage Description CCD Image Sensor Color CCD Image Sensor (Black/White) CCD Image Sensor System Scanning System IC for Video Camera Signal Processing IC for Video

DM74367

Abstract: 54175 71ls97 DM74109 DM8160 om541 ci 8602 gn block diagram 5401 DM transistor 74L10 74S136
Contextual Info: N ational Semiconductor Section 1 - 54/74 SSI DEVICES Connection Diagram s • Electrical Tables Section 2 - 54/74 M SI DEVICES Section 3 - National Semiconductor PROPRIETARY DEVICES Section 4 - National Semiconductor ADDITIONAL D EV KES t o NATIONAL Manufactured under one or more of the fo llowing U.S. patents: 3083262, 3189758, 3231797 , 3303356, 3317671, 3323071, 3381071, 3408542, 3421025, 3426423, 3440498, 3518750, 3519897, 3557431, 3560765,