M28LV17 Search Results

Contextual Info: /T T S G S -T H O M S O N li!ilO IILi g¥K©li!!lD(gi M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3V± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA - Standby Current 50|jA

IL055

Contextual Info: SGS-THOMSON M28LV17 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max

Contextual Info: SGS-THOMSON raDwunnteinMiiiiiDei M28LV17 LOW VOLTAGE 16K 2K x 8 PARALLEL EEPROM with SOFTWARE DATA PROTECTION • FAST ACCESS TIME: 200ns ■ SINGLE LOW VOLTAGE OPERATION ■ LOW POWER CONSUMPTION ■ FAST WRITE CYCLE: - 64 Bytes Page Write Operation - Byte or Page Write Cycle: 3ms Max

M28LV16

Abstract: PDIP28 PLCC32
Contextual Info: M28LV17 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

M28LV16

Abstract: PDIP28 PLCC32
Contextual Info: M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max ENHANCED END OF WRITE DETECTION:

A10E

Contextual Info: M28LV17 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION DATA BRIEFING FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

Contextual Info: SGS-THOMSON raD»HlLll Ê'inM l)i!lD(ei M28LV16 LOW VOLTAGE 16K (2K x 8) PARALLEL EEPROM with SOFTWARE DATA PROTECTION • ■ ■ ■ ■ ■ ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

TSOP40 Flash

Abstract: m48z32y M27V512 FDIP24W M27128A M2716 M27256 M2732A M27512 M2764A
Contextual Info: MEMORY PRODUCTS SELECTOR GUIDE A C) NMOS UV EPROM, 5V Operation Size 16 Kb 32 Kb 64 Kb 128 Kb 256 Kb 512 Kb Ref M2716 M2732A M2764A M27128A M27256 M27512 Description 16 Kb x8), 350 - 450ns, NMOS 32 Kb (x8), 200 - 450ns, NMOS 64 Kb (x8), 180 - 450ns, NMOS

FDIP24W

Abstract: M27128A M2716 M27256 M2732A M27512 M2764A M27C256B M27C64A M29F040
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV & OTP EPROM, 5V Operation Size References Description Package 16 Kb M2716 16 Kb x8 , 350 - 450ns, NMOS FDIP24W 32 Kb M2732A 32 Kb (x8), 200 - 450ns, NMOS FDIP24W M2764A 64 Kb (x8), 180 - 450ns, NMOS

t537

Contextual Info: S G S -1 H 0 M S 0 N RJOD @ [l[Lli©ra®RDD©i M 28L V 17 LOW VOLTAGE PARALLEL ACCESS 16K 2K x 8 EEPROM WITH SOFTWARE DATA PROTECTION • ■ ■ ■ FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: - 64 Bytes Page Write Operation

a10157

Abstract: CZL - A8 M28LV16 PDIP28 PLCC32 S028 ZDA10
Contextual Info: S G S -T H O M S O N ^ 7 /» M 28LV17 M [ M S E [ L I ç n ïïM 5 [ iïïD ( S § LOW VOLTAGE PARALLEL ACCESS 16K (2K x 8 EEPROM PRODUCT PREVIEW • FAST ACCESS TIME: 150ns ■ SINGLE 3 V ± 10% SUPPLY VOLTAGE ■ LOW POWER CONSUMPTION: - Active Current 8mA

asm eagle

Abstract: M28F101 M28F102 M28F201 M28F256 M28F512 texas 4mb dram M27C1024 Parallel NOR Flash Market MBX860
Contextual Info: MEMORY SELECTOR Leading Edge Memories Index page Leading Edge Memories 1 Why a Broad Range? 2 Technology, Upgrades and Quality 6 Flash Memories: application flexibility 8 EEPROM and ASM: higher performance 10 OTP and UV EPROM: dependable solutions 14 Non-Volatile RAM:

M28C16A

Abstract: M28LV16 PDIP24 PLCC32 SO24
Contextual Info: M28LV16 16K 2K x 8 LOW VOLTAGE PARALLEL EEPROM with SOFTWARE DATA PROTECTION NOT FOR NEW DESIGN FAST ACCESS TIME: 200ns SINGLE LOW VOLTAGE OPERATION LOW POWER CONSUMPTION FAST WRITE CYCLE: – 64 Bytes Page Write Operation – Byte or Page Write Cycle: 3ms Max

PJ 1179

Abstract: M27512 12b1 M27F512 ST24C08B1 M27C256B-12F1 ST93C46AB1 m27c4001-12f1 m48z32y M27C1001-20F1 ST24C04CM6TR
Contextual Info: MEMORY SELECTOR Leading Edge Memories GO Leading Edge Memories Leading Edge Memories Flash Memories Serial and Parallel EEPROMs Application Specific Memories UV and OTP EPROMs Non-Volatile RAMs Broad Range SGS-THOMSON is a world leader in non-volatile memories, manufacturing a

M93C46BN1

Abstract: PLCC32 512k M24C32MN1 M93S46RBN1 ST24C04M1 M2716-1F1 200N1 M28F512-15C1 M27C1024-12F7 M27C256B-20C7
Contextual Info: MEMORIES and SMARTCARD PRODUCTS NON VOLATILE MEMORIES UV EPROM - NMOS Size Part Number Organis. Speed ns VCC Range ICC / Stby Temperature Range (°C) Package 16K M2716-1F1 x8 350 5V ± 10% 100mA/25mA 0 to 70 FDIP24W 16K M2716-1F6 x8 350 5V ± 10% 100mA/25mA