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    D 2095 TRANSISTOR Search Results

    D 2095 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    D 2095 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: DC-DC 400/600 Watts MCC Series xppower.com • Baseplate-cooled • Up to 4 Regulated Outputs • Optional 200 W Conditioned Output • MIL-STD 1275 and DEF-STAN 61-5 • MIL-STD 461 and DEF-STAN 59-411 • Rugged Construction to MIL-STD 810F • 3 Year Warranty


    Original     		PDF MIL-STD-1275A/B/C/D MCC400-600: MCC400/600: 21-Jan-11 MCC400/600

    TO-251 footprint

    Abstract: SSM20G45EGJ SSM20G45 STROBE FLASHER USE IGBT SSM20G45EGH 20g45e
    Text: SSM20G45EGH/J N-channel Insulated-Gate Bipolar Transistor PRODUCT SUMMARY V CES 450V V CE sat 5V typ. I CP 130A DESCRIPTION The SSM20G45E acheives fast switching performance with low gate charge without a complex drive circuit. It is suitable for use in short-duration, high-current strobe


    Original     		PDF SSM20G45EGH/J SSM20G45E O-251 O-252 SSM20G45EGH O-252 SSM20G45EGJ O-251, TO-251 footprint SSM20G45 STROBE FLASHER USE IGBT 20g45e

    MRF21085

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085S

    J176 equivalent

    Abstract: MRF21085S MRF21085
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 J176 equivalent

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085R3 MRF21085LSR3

    MOTOROLA J210

    Abstract: MRF21085
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 MOTOROLA J210

    T495X106K035AS4394

    Abstract: MRF21085 100B100JCA500X CDR33BX104AKWS MRF21085S
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21085/D MRF21085 MRF21085S 10part. MRF21085 T495X106K035AS4394 100B100JCA500X CDR33BX104AKWS MRF21085S

    MRF21085

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085/D MRF21085R3 MRF21085SR3 MRF21085LSR3 MRF21085/D MRF21085

    MOTOROLA J210

    Abstract: MRF21085
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085/D MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 MRF21085/D MOTOROLA J210

    100B100JCA500X

    Abstract: CDR33BX104AKWS MRF21085 MRF21085S j340 motorola make
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110


    Original     		PDF MRF21085/D MRF21085 MRF21085S MRF21085 100B100JCA500X CDR33BX104AKWS MRF21085S j340 motorola make

    MOTOROLA J210

    Abstract: MRF21085 T495X106K035AS4394 100B100JCA500X CDR33BX104AKWS MRF21085LSR3 MRF21085R3 MRF21085SR3
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085/D MRF21085 MRF21085R3 MRF21085SR3 MRF21085LSR3 MRF21085 MRF21085R3 MRF21085SR3 MOTOROLA J210 T495X106K035AS4394 100B100JCA500X CDR33BX104AKWS MRF21085LSR3

    MOTOROLA J210

    Abstract: J357 MRF21085
    Text: MOTOROLA Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085/D MRF21085 MRF21085S MRF21085SR3 MRF21085LS MRF21085LSR3 MRF21085/D MOTOROLA J210 J357

    MARKING 2160

    Abstract: MARKING WB1 th 2190 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085LSR3 MARKING 2160 MARKING WB1 th 2190 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3

    T495X106K035AS4394

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 11, 10/2008 RF Power Field Effect Transistor MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085LSR3 T495X106K035AS4394 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3

    100B100JCA500X

    Abstract: AN1955 MRF21085 MRF21085LSR3 MRF21085R3 MRF21085SR3
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF21085/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085/D MRF21085R3 MRF21085SR3 MRF21085LSR3 100B100JCA500X AN1955 MRF21085 MRF21085LSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21085LR3 Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21085--1 MRF21085LR3

    j340 motorola make

    Abstract: MRF21085
    Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085R3 MRF21085LSR3 j340 motorola make

    MRF21085

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRF21085 Rev. 7, 1/2005 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085R3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		PDF MRF21085 MRF21085R3 MRF21085LSR3

    MRF21085LR3

    Abstract: 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent
    Text: Freescale Semiconductor Technical Data Document Number: MRF21085 Rev. 9, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21085LR3 MRF21085LSR3 Designed for W- CDMA base station applications with frequencies from 2110


    Original     		PDF MRF21085 MRF21085LR3 MRF21085LSR3 MRF21085LR3 100B100JCA500X CDR33BX104AKWS MRF21085 MRF21085LSR3 J176 equivalent

    FBN-36220

    Abstract: FBN-L109 FBT-00-031 IN4002 diode FBL-00-030 lambda transistor fbn FBL-00 FBN36485 FBN-L115 FBN-L102
    Text: INSTRUCTION MANUAL FOR REGULATED POWER SUPPLIES LL SERIES THIS MANUAL APPLIES TO UNITS BEARING SERIAL NO. PREFIXES À-D - 2095 - This manual provides instructions intended for the operation of Lambda power supplies, and is not to be reproduced without the written consent


    OCR Scan     		PDF LL-905 LL-901 LL-902 LL-903 FBN-36220 FBN-L109 FBT-00-031 IN4002 diode FBL-00-030 lambda transistor fbn FBL-00 FBN36485 FBN-L115 FBN-L102

    GES5812

    Abstract: intermediat GES5810 GES5811 GES5813
    Text: G E SOLID STATE 3 8 75 0 8 1 G E 01 SOLID STATE DËfJ 3Ô7SDÔ1 Gai?1!?! â 01E 17971 T D - Z s ? - ¿ .3 - Signal Transistors GES5810, GES5811, GES5812, GES5813


    OCR Scan     		PDF GES5810, GES5811, GES5812, GES5813 GES5812 GES5811 GES5813 intermediat GES5810

    C277

    Abstract: 6N55 SEFH6N55
    Text: SEFH6H55 SEFH7N50 SEFM6N55 SEFM7H50 N-CHANNEL POWER MOS TRANSISTORS HIGH SPEED SWITCHING APPLICATIONS These products are diffused multi-cell silicon gate N-Ghannel enhancement mode P ow er-M os field effect transistors, V D SS R D S ON •d 500 V 0.8 Q 7A


    OCR Scan     		PDF SEFH6H55 SEFH7N50 SEFM6N55 SEFM7H50 300ns, C-279 SEFH6N55 SEFH7H50 SEFM7N50 C277 6N55

    TA 2092 N

    Abstract: 2SA9411 2SA942 2SC2082 2093H
    Text: 5 - - FOR U SE BY E LEC TR IC IA N S O VER SEA S : •M-EiiOSWHE New Transistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will make full use of the data provided in this manual by referring to the Japanese-English


    OCR Scan     		PDF r--25 /--470MHz, 470MHz, -470MHz. 250nS TA 2092 N 2SA9411 2SA942 2SC2082 2093H

    Untitled

    Abstract: No abstract text available
    Text: HM62W1400H Series 4M High Speed SRAM 4-Mword x 1-bit HITACHI ADE-203-773E (Z) Rev. 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed staticRAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed


    OCR Scan     		PDF HM62W1400H ADE-203-773E 400-mil 32-pin 400-mil HM62W 1400H-10