D 400 F 6 F BIPOLAR TRANSISTOR Search Results

D 400 F 6 F BIPOLAR TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
TTA011	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / PW-Mini

D 400 F 6 F BIPOLAR TRANSISTOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BLY32 Abstract: blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier Contextual Info: 83 RF/Microwave Devices Video Amplifiers Video Amplifier Line-Ups Application Preamp Stage B & W high resolution colour high resolution OM3016 OM925 OM975 OM3026 OM925 OM975 Output Stage OM976 Wideband Transistors for Application in Video Output Amplifiers in Monitors	OCR Scan	OM3016 OM3026 OM925 OM925 OM975 OM976 BFQ231 BFQ231A BFQ251 BLY32 blf278 108 amplifier Philips Application BLX15 RF Power Amplifiers bgy55 blw95 BLF543 BFQ43 BLW33 blf177 108 amplifier	PDF
D 400 F 6 F BIPOLAR TRANSISTOR Contextual Info: MITSUBISHI HVIGBT MODULES Revision: A Prepared by K.Kurachi Approved by I.Umezaki Mar.-1-2011 CM400HG-130H HIGH POWER SWITCHING USE INSULATED TYPE rd 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules CM400HG-130H IC ……………………… 400 A	Original	CM400HG-130H HVM-1045-A 000A/Â D 400 F 6 F BIPOLAR TRANSISTOR	PDF
10N50A Abstract: 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D Contextual Info: -File Num ber Insulated-Gate Bipolar Transistors IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD 2273 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs With Anti-Parallel Ultra-Fast Diode	OCR Scan	IGTH10N40D, IGTH10N40AD, IGTH10N50D, IGTH10N50AD IGTH10N50AD 2CS-42 10N50A 10n400 10N40 AN7264 10N50AD 20n50 10N50D 10n5 IGTH10N50D IGTH10N40D	PDF
20/IGBT FF 450 Contextual Info: N AMER PHILIPS/DISCRETE b'lE ]> • bbSBIBl 0 0 3 0 1 :1.1 633 « A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor Protected IGBT QUICK REFERENCE DATA GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in	OCR Scan	O220AB BUK856-450IX 20/IGBT FF 450	PDF
LN-200 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power TVansistor w ith Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork The BUD44D2 is state-of-art High Speed High gain BIPolar transistor H2BIP .	OCR Scan	BUD44D2 BUD44D2 L-200 LN-200	PDF
MT 2800 N Abstract: D 1062 transistor CM800HG-90R Contextual Info: Prepared by S. Iura Approved by H. Yamaguchi : Jul. 2010 MITSUBISHI HVIGBT MODULES Revision: 1.0 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HG-90R ● IC ………………………	Original	CM800HG-90R HVM-1062 MT 2800 N D 1062 transistor CM800HG-90R	PDF
D 1062 transistor Abstract: HVM-1062 Contextual Info: CONFIDENTIAL MITSUBISHI HVIGBT MODULES Prepared by S. Iura Revision: 1.0 Approved by H. Yamaguchi : Jul. 2010 CM800HG-90R th 4 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE COMPANY PROPRIETARY	Original	CM800HG-90R HVM-1062 D 1062 transistor HVM-1062	PDF
BUK856-450IX Abstract: zener diode f7 T0220AB BUK856 transistor r 606 j Contextual Info: N AUER P H I L I P S / D I S C R E T E bTE D • bbSBiai 0030111 633 * A P X Philips _ Product Specification Insulated Gate Bipolar Transistor BUK856-450IX Protected IGBT _	OCR Scan	0D3CH11 BUK856-450IX T0220AB BUK856-450IX zener diode f7 BUK856 transistor r 606 j	PDF
transistor bh ra Abstract: WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A T0220AB M 615 transistor Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl5b 00b4353 ^bS ■ P H I N Philips Semiconductors_ Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a	OCR Scan	BUK856-800A T0220AB transistor bh ra WE VQE 24 E D 400 F 6 F BIPOLAR TRANSISTOR WE VQE 11 E BUK856-800A M 615 transistor	PDF
MRF660 Abstract: MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522 Contextual Info: MOTOROLA SC XSTRS/R F 2 bE D • b3b?2S4 GGT0Ô7G 4 ■ T - MIL-Processed Semiconductors (Continued) SELECTOR GUIDE POWER TRANSISTORS TMOS FETs These TMOS Power FETs are designed for high speed power switching applications such as switching regulators, converters, solenoid and relay drivers, and PWM motor	OCR Scan	i0fi70 O-254AA MHM5N100HX, MHM12N50HX, MHM25N20HX, MHM25N10HX, MHQ3468HX, MQ3468HX, MHQ4261HX, MQ4261HX, MRF660 MHQ6002HX MHM25N20HX MBR5825 MRF5160 MM3227H MHM12N50HX MBR5825H MM3227 mrf522	PDF
5N602 Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor BUK856-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power	OCR Scan	BUK856-400IZ T0220AB BUK856-400IZ 5N602	PDF
D 400 F 6 F BIPOLAR TRANSISTOR Abstract: BUK866 Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor Protected Logic-Level IGBT GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope suitable for surface mount applications. It is intended for	OCR Scan	BUK866-400 SQT404 BUK866-4Q0 D 400 F 6 F BIPOLAR TRANSISTOR BUK866	PDF
BUK854-800A Abstract: T0220AB Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA SYMBOL Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in	OCR Scan	BUK854-800A T0220AB T0220AB; T0220 BUK854-800A T0220AB	PDF
PJ 986 Abstract: pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD IGTH20N50AD Contextual Info: - Insulated-Gate Bipolar Transistors IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD File Number 2271 N-Channel Enhancement-Mode Insulated Gate Bipolar Transistors IGBTs	OCR Scan	IGTH20N4QD, IGTH20N40AD, IGTH20N50D, IGTH20N50AD IGTH20N40D, IGTH20N50AD PJ 986 pj 986 diode 20N50A pj 809 20n50 IGTH20N40D 20N40 20N50D IGTH20N40AD	PDF

D 400 F 6 F BIPOLAR TRANSISTOR Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK866-400IZ Protected Logic-Level IGBT_ GENERAL DESCRIPTION Protected N-channel logic-level insulated gate bipolar power transistor in a plastic envelope	OCR Scan	BUK866-400IZ 300us) D 400 F 6 F BIPOLAR TRANSISTOR	PDF
BUK854-800 applications Abstract: BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt Contextual Info: Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION QUICK REFERENCE DATA Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope. The device is intended for use in motor control, DC/DC and AC/DC	Original	O220AB BUK854-800 applications BUK854-800 datasheet BUK854-800 BUK854-800A transistor igbt	PDF
TRANSISTOR 434 Abstract: BUK856-450IX mj power transistor IEC134 T0220AB Contextual Info: PHILIPS INTERNATIONAL bSE D • 7110fl2b QQL.M347 Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT PARAMETER MIN. TYP. MAX. UNIT V CL CER VcEsat Ic Ptot Ecers Collector-emitter clamp voltage Collector-emitter on-state voltage Collector current (DC)	OCR Scan	7110fiSt. BUK856-450IX T0220AB TRANSISTOR 434 mj power transistor IEC134	PDF
Contextual Info: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.	OCR Scan	htjS3T31 O220AB BUK854-800A bbS3831	PDF
Contextual Info: MOTOROLA O rder this docum ent by BUL45D2/D SEMICONDUCTOR TECHNICAL DATA BUL45D2 D esigner’s Data Sheet High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C o llecto r-E m itter Diode and B uilt-in Efficient A ntisaturation N etw o rk	OCR Scan	BUL45D2/D BUL45D2 21A-06 O-220AB	PDF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUD44D2 Advance Information POWER TRANSISTORS 2 AMPERES 700 VOLTS 25 WATTS High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Em itter Diode and Built-in Efficient Antisaturation Netw ork T h e B U D 4 4D 2 is s ta te -o f-a rt High Speed High gain BIPolar transistor H 2B IP .	OCR Scan	BUD44D2 St254 MTP8P10 500nH	PDF
Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E2G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E2G-130H ● IC ………………………	Original	24-Feb CM400E2G-130H HVM-1048-B 000A/Â	PDF
OL35 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE18004D2 D esigner’s Data Sheet POWER TRANSISTORS S AMPERES 1000 VOLTS 75 WATTS High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m ltter Diode and B uilt-in E fficient A ntisaturation N etw ork	OCR Scan	MJE18004D2 MJE18004D2 OL35	PDF
CM400E4G-130H Abstract: cm400e2 Contextual Info: MITSUBISHI HVIGBT MODULES Revision: B Prepared by K.Kurachi Date I.Umezaki 24-Feb.-2009 CM400E4G-130H th 3 -Version HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400E4G-130H ● IC ………………………	Original	24-Feb CM400E4G-130H HVM-1049-B CM400E4G-130H cm400e2	PDF
BUK856-450IX Contextual Info: Product Specification Philips Semiconductors Insulated Gate Bipolar Transistor Protected IGBT GENERAL DESCRIPTION Protected N-channel insulated gate bipolar power transistor in a plastic envelope, intended for automotive ignition applications. The device has built-in zener	OCR Scan	BUK856-450IX T0220AB BUK856-450IX	PDF

D 400 F 6 F BIPOLAR TRANSISTOR Search Results

D 400 F 6 F BIPOLAR TRANSISTOR Result Highlights (5)

D 400 F 6 F BIPOLAR TRANSISTOR Datasheets Context Search

BLY32

D 400 F 6 F BIPOLAR TRANSISTOR

10N50A

20/IGBT FF 450

LN-200

MT 2800 N

D 1062 transistor

BUK856-450IX

transistor bh ra

MRF660

5N602

D 400 F 6 F BIPOLAR TRANSISTOR

BUK854-800A

PJ 986

D 400 F 6 F BIPOLAR TRANSISTOR

BUK854-800 applications

TRANSISTOR 434

OL35

CM400E4G-130H

BUK856-450IX