D 44 NPN Search Results

powertrain controller

Abstract: ecu sensors capacitor 685 35K MC33394 SW11 capacitor chip 685 35K
Contextual Info: MOTOROLA Order Number: MC33394/D Rev. 0, 06/2001 SEMICONDUCTOR TECHNICAL DATA Advance Information PowerOak MC33394 MCU Companion — Voltage Regulators + CAN Transceiver + Reset 44–Lead HSOP Plastic Package 1291–01 44–Lead QFN Plastic Package 1310–01

Contextual Info: MOTOROLA Order this document by BUL44/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet B U L 44* BUL44F* SW ITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR 2.0 AMPERES

Contextual Info: Si4840/44-DEMO Si4840/44 D EMO B OARD U SER ’ S G UIDE 1. Features  ATDD analog tune and digital display FM/AM/SW radio  Worldwide FM band support from 64 to 109 MHz with 5 default sub-bands: FM1 FM2 FM3 FM4 FM5 

NPN Transistor isolated T0-220

Contextual Info: Order this data sheet by BUL44/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA B U L 44 B U L 44F Designer’s Data Sheet SW ITCHMODE™ M o to ro la P referre d D e vices NPN Bipolar Power TVansistor For Sw itching Pow er Supply Applications POWER TRANSISTOR 2.0 AMPERES

VTT0842

Abstract: VTT0843 VTT0844
Contextual Info: SbE J> 3 D 3D b O *î ÜO D 117b .040" NPN Phototransistors & G VACTEC I VCT V T T 0 8 4 2 , 43, 44 Low Cost Hermetic TO-18 Lensed Pkg E 6 fi'ìS . - 1 PACKAGE DIMENSIONS inch mm 0 $ ( 5 .2 3 )

a 933 transistor

Abstract: BFR90A 2912 TRANSISTOR PNP bfr90A philips BFQ51 3FR90 mcd001
Contextual Info: Philips Semiconductors Product specification 7 = 3 A -/7 NPN 5 GHz wideband transistor PHILIPS INTERNATIONAL FEATURES SbE D ^ BFR90A 7110fi5Li □D4St.cì2 44Ì M P H I N PINNING • Low noise • Low intermodulation distortion PIN • High power gain 1 •

XR-M100

Abstract: XR-1488 XR-494 XR-1488N XR-1488P XR-1489A XR-1489AN XR-1489AP EXAR XR
Contextual Info: EXAR 3422618 EXAR CORP Tl dË CORP XR-M100 Master-Chip NPN Transistors Chip Size: 176 x 121 mils Small Signal: 137 Total Components: 840 Low Noise: 4 Bonding Pads: 28 Max. Operating Voltage: 20V Medium: 4 Large: 4 PNP Transistors Lateral: 44 Quad Collector: 8

Contextual Info: EXAR 3422618 EXAR CORP Tl dË CORP 91D XR-M100 Master-Chip Chip Size: 176 x 121 mils Total Components: 840 Bonding Pads: 28 Max. Operating Voltage: 20V J BMEEbia NPN Transistors Small Signal: 137 Low Noise: 4 Medium: 4 Large: 4 PNP Transistors Lateral: 44

2N6078

Contextual Info: MOTOROLA SC -CDIODES/OPTO} 34 ]>E.| b3b7255 0037^44 T f §337255 M O T O R O L A SC D I O D E S /O P T O 34C 3 7 9 4 4 D T '3 3 '0 1 SILICON POWER TRANSISTOR DICE (continued) 2C6235 DIE NO. — NPN LINE SOURCE — PL500.746 This die provides performance equal to or better than that of

NCP4115

Abstract: NCP4100 200v npn 3a d2pak NCP1450 Bipolar Power Transistor Data 400V igbt dc to dc buck converter 12V to 300V dc dc converter step-up NCP1650 NCP1204 DL135
Contextual Info: Rev. 10, 3Q02 SGD503/D POWER MANAGEMENT SOLUTIONS ANALOG PRODUCTS DC/DC: Multiphase Controllers DEVICE NCP5316 NCP5332A POWER MANAGEMENT SOLUTIONS ANALOG cont. GATE DRIVE External On-chip COMPLIANCE VRM 10 VRM 9.0 PACKAGE AVAILABILITY QFN-44 7*7 4Q02 SO-28W

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

74C10

Abstract: 7107 SC7107 SC7106 VSC7107 CD4023 9a240
Contextual Info: SC7106/7107 33/4 SC7106 LCD 3620- SC7107 A/D A/D SC7106 LCD SC7107 SC7106 DIP-40-600-2.54 LED SC7107 10µV 1µV/°C 10pA QFP-44-10 x10-0.8 LCD SC7106 * * 1pA * LCD SC7106 LED * SC7107 15µVp-p * * 10mW * °C SC7106CPL 0~70 DIP-40-600-2.54 SC7106RCPL 0~70

LP319

Abstract: IC 74LS00
Contextual Info: I IP 11Q IP7Q 11 LOW POW ER QUAD D IFFER EN TIA L C OM PARATORS 030 44 , OCTOBER 1987-REVISED MAY 1988 • Ultralow Power Supply Current Drain . . . Typically 6 0 /»A • Low Input Biasing Current . . . 3 nA D, J, OR N PACKAGE (TOP VIEW • Low Input Offset Current . . . ± 0 .5 nA

2N5249

Abstract: 17T4S 2N5249A tj260 "to-98" package 12015C
Contextual Info: G E SOLI » 01 STATE 3 87 5 0 8 1 G E SOLID DE I 3075001 0017^44 S | ~ 01E STATE 17944 D T 'Z 9 '/ f Signal Transistors- 2N5249, 2N5249A Silicon Transistors TO-98 The GE/RCA 2N5249 and 2N5249A are planar epitaxial pas­ sivated NPN Silicon transistors designed especially for low

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5bE 3G30b0T D □□□1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg E 751 • VCT V T T 0 9 4 2 , 43, 44 T —41—61 G & G VACTEC PACKAGE DIMENSIONS inch mm ■2 0 6 ( 5 .2 5 ) .5 0 ( 12 .7 ) (0 51) CASE 53 PRODUCT DESCRIPTION

2SD1322

Abstract: 010of
Contextual Info: Power Transistors ^ 3 2 0 5 2 0 0 1 L7 0 0 2 SD1322 b 44 2S D 1322 Package D im ensions S ilicon NPN Triple-D iffused Planar Darlington Type M edium Speed Power S w itching • Features • 3 0 V Z e n e r d io d e b u ilt-in b e t w e e n C a n d B • V e r y s m a ll f lu c t u a t io n in b r e a k d o w n v o l t a g e s

VTT0942

Abstract: VTT0943 VTT0944
Contextual Info: 5 bE 3G30b0T D GGD1177 .040" NPN Phototransistors Low Cost Hermetic TO-18 Flat Window Pkg 7B1 • VCT V TT 0 9 4 2 , 43, 44 T—41—61 E G & G VACTEC PACKAGE DIMENSIONS inch mm .5 0 ( 1 2 . 7 ) ■206 ( 5 .2 3 ) ’ .1 7 8 ( 4 . 5 2 ) 2 0 5 ( S .2 1 ) CASE 53

2SD1322

Contextual Info: P o w e r T ra n s is to rs b T B2 f l 5 2 2SD1322 Q01b700 2SD1322 fc>44 Package Dimensions Silicon NPN Triple-Diffused Planar Darlington Type Medium Speed Power Switching • Features • 3 0V Z e n e r d io d e built-in b e tw e e n C and B • V e r y sm a ll flu c tu a tio n in b r e a k d o w n v o lt a g e s

diode zener c25

Abstract: diode zener c29 zener DIODE C25 transistor c323 zener diode c18 st ST transistor c322 z5 zener diode diode zener c23 diode zener c26 zener diode c32
Contextual Info: AN15 D E S I G N C O N S I D E R A T I O N S F O R T H E S I 303 4/38/4 4 Introduction The Si3034/38/44 direct access arrangement DAA provides worldwide compliance for modems and other communications equipment that is connected to analog telephone networks. Many different standards exist to

buw46

Abstract: BUW45 buw44
Contextual Info: 7^2^53? DoaaaMa T • ¡¡fi S C S -T H O M S O N S G S- THOMSON T 3 3-iS BUW 44/B U W 45 BUW46 3QE D HIGH VOLTAGE, HIGH CURRENT POWER SWITCH DESCRIPTION The BUW44, BUW45 and BUW46 are multiepitaxial mesa NPN transistors in Jedec TO-3 metal case intended in fast switching applications for high

Contextual Info: HEWLETT-PACKARD/ CHPNTS t.lE D WM 4447534 1 44 577 □DD‘Ö Surface Mount, Low Current Silicon Bipolar Transistor Technical Data AT-60111 AT-60211 Features • Low C u rrent O peration AT-60111: 0.4 mA at 3 V AT-60211: 0.8 mA at 3 V • Low Noise Figure

44E SOT-23

Abstract: SOT-23 MARKING 1DP 1dp sot-23 SOT-23 MARKING 1GP code 1gp BC846 marking 1Gp BC846B BC847 BC847B
Contextual Info: •I b bS 3 lì31 GQ24M53 *44^ HIAPX N AUER PHILIPS/DISCRETE B C 846 BC847 BC848 fc.7E 1> 7 V. SILICON PLANAR EPITAXIAL TRANSISTORS General purpose n-p-n transistors in a plastic SOT-23 package. QUICK REFERENCE D A T A Collector-emitter voltage {V g g = 0

RC723DP

Abstract: SN72748L MC7805G LM340H-05 SG3525 equivalent transistor KT 209 M 78M15HM SN52107L SG711 SG7812CK
Contextual Info: VOLTAGE REGULATORS OPERATIONAL AMPLIFIERS 2 INTERFACE CIRCUITS 3 TRANSISTOR ARRAYS OTHER CIRCUITS APPLICATIONS NOTES 5 d u c t S e le c to r G uide INTER FA C E C IR C U ITS Regulating Pulse Width Modulators 13 13 16 21 24 44 1524/2524/3524 1525/2525/3525

Contextual Info: M ay 1997 MgLMicro Linear ML65T244 3.3V High Speed Dual Quad Buffer/Line Driver GEN ERAL D ESCRIPTION FEATURES The M L65 T2 44 is a non-inverting dual quad buffer/line driver. The high operating frequency 6 6 M H z driving a 50pF load and low propagation delay (2ns) make it ideal