D45H1 Search Results

D44H11FP

Contextual Info: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

ge d45h11

Abstract: GE D45H2 ge d44h11 D44H8 D44H5 D45H2 D44H1 D44H2 transistor d44h11 D44H7
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE T yp e NPN V CEO M in. V •c C o n t. (A I 50 30 50 PNP M in . M in . 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2

D44H5

Contextual Info: 7•=!E■= S37 0021053 ô ■ r‘T V 3 3 > -2 ) SGS-THOMSON D45H1 /4/7/10 IfôflDO^IULllOïï^iDûl_ D45H2/5/8 S G S-TH0MS0N 30E ^ PNP LOW VOLTAGE TRANSISTOR P R E L IM IN A R Y D A TA ■ LOW COLLECTOR SATURATION VOLTAGE ■ EXCELLENT LINEARITY

Contextual Info: D45H1 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10ux @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 1 3 TO-220 Description The devices are manufactured in low voltage multi

J15004

Abstract: BD751 BD751A D44H D45H D45H1 D45H10 D45H11 D45H2 bd751c
Contextual Info: THOflSON/ D I S T R I B U T O R SflE D <ì02fc,fl73 G D a S T a S TCSK - 144 Bipolar Power Transistors General Purpose continued V C E (s a t)-V hFE T y p o N o. v CEO<8 u s> V C EV (SUS> V V D45H1 D 45H 2 D 45H 4 D 45H 5 D 45H 7 D45H 8 D 45H 10 D45H11

D44H8

Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
Contextual Info: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi

Contextual Info: D45H10 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

D45H11 FAIRCHILD

Contextual Info: D45H11 PNP Power Amplifier • This device is designed for power amplifier, regulator and switching circuits where speed is important. • Sourced from process 5Q. TO-220 1 Mark: D45H11 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings Symbol VCEO IC

D45H1A

Abstract: 1462, TRANSISTOR
Contextual Info: ¿Z&MOSPEC PNP SILICON POWER TRANSISTORS PNP D45H1A D45H1A transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage v c e o = 15V Min * High Current Power Transistors * DC Current Gain

ge d44h11

Abstract: D44* general electric npn to-220 D44H5 D44Hll D44H1 D44H2 D44H4 D44H7 D44H8 D45H1
Contextual Info: SILICON POWER TRANSISTORS 229 KP COMPLEMENTARY - 10 AMPERES Pt T c = 2 5°C GE Type NPN V CEO Min. V •c Cont. (A I 50 30 50 PNP M in. M in. 10 35 20 -3 0 -1 0 35 20 50 30 10 60 40 50 —30 ■10 60 40 50 45 10 35 20 <W) D44H1 - D45H1 D 44 H 2 - D 45H 2

D44H11

Abstract: D44H8 D45H11 D45H5 D45H8
Contextual Info: D45H5 D45H8 \ D45H11 PNP SILICON POWER TRANSISTORS • ■ ■ STM PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 DESCRIPTION

Contextual Info: D44H11FP D45H11FP Complementary power transistors Preliminary data Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi

D45H11

Abstract: D45H11J3 C607J3
Contextual Info: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 BVCEO IC RCESAT -80V -8A 75mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics

D45H10

Contextual Info: SavantIC Semiconductor Product Specification D45H10 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Fast switching speeds ·Low collector saturation voltage APPLICATIONS ·For general purpose power amplifications and switching regulators,converters and

D45H1B

Abstract: L-033 regulator
Contextual Info: Æ&m o s p e c PNP SILICON POWER TRANSISTORS PNP D45H1B D45H1B transistor is designed for use in low voltage and low drop-out regulator switching circuits application FEATURES: * Collector-Emitter Voltage V C e o = 10V Min * High Current Power Transistors

D45H10

Contextual Info: Inchange Semiconductor Product Specification D45H10 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-220C package ・Fast switching speeds ・Low collector saturation voltage APPLICATIONS ・For general purpose power amplifications and switching regulators,converters and

Contextual Info: D45H12 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V) I(C) Max. (A)10 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

45h8

Abstract: D45H11
Contextual Info: rz 7 Ä 7# SCS-THOMSON D45H5 D45H8\D45H11 Mlffii@lllLiCTIBMBDi PNP SILICON POWER TRANSISTORS . SGS-THOMSON PREFERRED SALESTYPES . LOW COLLECTOR-EMITTER SATURATION VOLTAGE • FAST SWITCHING SPEED APPLICATIONS . GENERAL PURPOSE SWITCHING . GENERAL PURPOSE SWITCHING AND

Contextual Info: D45H11 PNP Power Amplifier Features Description • • • • This device is designed for power amplifier, regulator, and switching circuits where speed is important. Sourced from process 5Q General-Purpose Switching Transistor Low Corrector-Emitter Saturation Voltage

d45h11

Abstract: D45H5 D44H111 d45h8
Contextual Info: D45H5 D45H8 \ D45H11 PNP SILICON POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS ■ GENERAL PURPOSE SWITCHING AND AMPLIFIER 3 1 DESCRIPTION The D45H5, D45H8 and D45H11 are silicon

D45H11

Abstract: D45H8 D45H5 D44H11 D44H8 D45H5/D45H8/D45H11
Contextual Info: D45H5 D45H8 \ D45H11 PNP SILICON POWER TRANSISTORS • ■ ■ STMicroelectronics PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER ■ 3 1 DESCRIPTION The D45H5, D45H8 and D45H11 are silicon

D45H11

Abstract: D45H11J3
Contextual Info: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2006.04.07 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics • Pb-free package

D45H8

Abstract: d44h111
Contextual Info: D45H5 D45H8 \ D45H11 PNP SILICON POWER TRANSISTORS • ■ ■ SGS-THOMSON PREFERRED SALESTYPES LOW COLLECTOR-EMITTER SATURATION VOLTAGE FAST SWITCHING SPEED DESCRIPTION The D45H5, and D45H8 are silicon multiepitaxial planar PNP transistors mounted in Jedec TO-220