D 6 MARKING PNP Search Results

Transistor hFE CLASSIFICATION Marking CE

Abstract: KTX111T
Contextual Info: SEMICONDUCTOR KTX111T TECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES E K ᴌIncluding two devices in TS6. 1 6 G 2 5 G Thin Super Mini type with 6 pin K B 3 4 DIM A B C D E 6 5 C 4 J Marking Q1 h FE Rank Q2 Type Name

supersot 6 TE

Contextual Info: S E M IC O N D U C T O R tm FMBA0656 Package: SuperSOT-6 C2 Device Marking: .003 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT- 6 Surface Mount Packsige

D marking PNP

Abstract: MARKING IC RP 6 PR63
Contextual Info: S E M IC O N D U C T O R tm FMB2227A C2 Package: SuperSOT-6 Device Marking: .001 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. V E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

transistor Y4

Abstract: complementary npn-pnp power transistors marking A1 TRANSISTOR FMB1020 marking 004
Contextual Info: D is cr ete Power S iq n a l T e ch n o lo g ie s MICDNDUCTDRtm ^ ^ FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complem entary Dual Transistor SuperSOT-6 Surface Mount Package

marking Y1 transistor

Abstract: y1 transistor complementary npn-pnp power transistors y1 npn transistor marking y1 FMB2227A Supersot 6 transistor y1
Contextual Info: S E M IC O N D U C T O R FMB2227A ,r , C2 ei -•P C1 Package: SuperSOT-6 Device Marking: .001 i Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. B2 w" E2 B1 NPN & PNP Complementary Dual 1rransistor SuperSOT-6 Surface Mount Packa ge

TMPT404

Contextual Info: SPRAGUE/SEM ICOND T 3 GROUP 8 5 1 4 0 1 9 SPRAGUE. SEMICONDS / IC S D • 0513050 0 D G 3 LiG7 7 ■ 93D 0 3 6 0 7 SMALL-OUTLINE BIPOLAR TRANSISTORS PNP Transistors ELECTRICAL CHARACTERISTICS at Tfl = 25°C IcBO Device Type Marking BCW29 C1 BCW30 C2 BCW61A

H119

Abstract: TK71 T092-3
Contextual Info: TK71150N SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Pin Assignment 10.Block Diagram 11.Definition 12.Package Outline D i mensions/Marking

supersot 6 TE

Abstract: Supersot 6
Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB1020 4p Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Com plem entary Dual Transistor

ITK71120N

Abstract: TK71 TK71120N
Contextual Info: TK71120N TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit Pin Assignment 10.Block Diagram 11.Definition 12.Package Outline Dimensions/Marking

TK71

Abstract: TK71220M 1220M
Contextual Info: TK71220M' TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5. Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking

Low Drop Low Power Voltage Regulator

Abstract: TK71 TK71328M
Contextual Info: SPECIFICATION TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3. F u n d ion 4. Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking

supersot 6 TE

Contextual Info: D is cr e te Power S iq n a l T e c h n o lo q ie s MICDNDUCTDRm ^ ^ FMB3946 C2 E1 C1 <• Package: SuperSOT-6 Device Marking: .002 g2 Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Com plem entary Dual Transistor

BCR169

Abstract: BCR169F BCR169L3 BCR169S BCR169T SOt323 marking code 6X
Contextual Info: BCR169. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 4.7 kΩ • BCR169S / U: Two internally isolated transistors with good matching in one multichip package • BCR169S / U: For orientation in reel see

Contextual Info: BCR185. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 47 kΩ • BCR185S / U: Two internally isolated transistors with good matching in one multichip package

BCR198W

Abstract: BCR198 BCR198F BCR198L3 BCR198S BCR198T SCD80
Contextual Info: BCR198. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 47 kΩ , R2 = 47 kΩ • BCR198S: Two internally isolated transistors with good matching in one multichip package

Contextual Info: BCR192. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 22kΩ , R2 = 47kΩ • BCR192U: Two internally isolated transistors with good matching in one multichip package

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

transistor marking s2a

Abstract: SMBT3906U MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906 SMBT3906S s2A SOT23 infineon marking code B2 SOT23
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low colltector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

SMBT3906U

Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

TRANSISTOR S2A

Abstract: SMBT3906U transistor marking s2a s2A SOT23 MMBT3906 TP MMBT3904 MMBT3906 SMBT3904 SMBT3904S SMBT3906
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

BCR183

Abstract: BCR183F BCR183S BCR183U BCR183W marking WMs infineon marking code B2 SOT23 transistor marking 6c1
Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package

s2A SOT23

Abstract: marking s2A sot23 SMBT3906U
Contextual Info: SMBT3906.MMBT3906 PNP Silicon Switching Transistors • High DC current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage • For SMBT3906S and SMBT3906U: Two galvanic internal isolated transistor with good matching in one package • Complementary types:

Contextual Info: BCR183. PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1 = 10 kΩ , R2 = 10 kΩ • BCR183S / U: Two internally isolated transistors with good matching in one multichip package